1,520 research outputs found
Electrical Spin Injection in Multi-Wall carbon NanoTubes with transparent ferromagnetic contacts
We report on electrical spin injection measurements on MWNTs . We use a
ferromagnetic alloy PdNi with x 0.7 which allows to
obtain devices with resistances as low as 5.6 at 300 . The yield
of device resistances below 100 , at 300 , is around 50%. We
measure at 2 a hysteretic magneto-resistance due to the magnetization
reversal of the ferromagnetic leads. The relative difference between the
resistance in the antiparallel (AP) orientation and the parallel (P)
orientation is about 2%.Comment: submitted to APL version without figures version with figures
available on http://www.unibas.ch/phys-meso
Finite bias Cooper pair splitting
In a device with a superconductor coupled to two parallel quantum dots (QDs)
the electrical tunability of the QD levels can be used to exploit non-classical
current correlations due to the splitting of Cooper pairs. We experimentally
investigate the effect of a finite potential difference across one quantum dot
on the conductance through the other completely grounded QD in a Cooper pair
splitter fabricated on an InAs nanowire. We demonstrate that the electrical
transport through the device can be tuned by electrical means to be dominated
either by Cooper pair splitting (CPS), or by elastic co-tunneling (EC). The
basic experimental findings can be understood by considering the energy
dependent density of states in a QD. The reported experiments add
bias-dependent spectroscopy to the investigative tools necessary to develop
CPS-based sources of entangled electrons in solid-state devices.Comment: 4 pages, 4 figure
Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts
Advanced synthesis of semiconductor nanowires (NWs) enables their application
in diverse fields, notably in chemical and electrical sensing, photovoltaics,
or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an
ideal platform for quantum devices, e.g. they may host topological Majorana
states. While the synthesis has been continously perfected, only few techniques
were developed to tailor individual NWs after growth. Here we present three wet
chemical etch methods for the post-growth morphological engineering of InAs NWs
on the sub-100 nm scale. The first two methods allow the formation of
self-aligned electrical contacts to etched NWs, while the third method results
in conical shaped NW profiles ideal for creating smooth electrical potential
gradients and shallow barriers. Low temperature experiments show that NWs with
etched segments have stable transport characteristics and can serve as building
blocks of quantum electronic devices. As an example we report the formation of
a single electrically stable quantum dot between two etched NW segments.Comment: 9 pages, 5 figure
Contact-less characterizations of encapsulated graphene p-n junctions
Accessing intrinsic properties of a graphene device can be hindered by the
influence of contact electrodes. Here, we capacitively couple graphene devices
to superconducting resonant circuits and observe clear changes in the
resonance- frequency and -widths originating from the internal charge dynamics
of graphene. This allows us to extract the density of states and charge
relaxation resistance in graphene p-n junctions without the need of electrical
contacts. The presented characterizations pave a fast, sensitive and
non-invasive measurement of graphene nanocircuits.Comment: 4 figures, supplementary information on reques
Wideband and on-chip excitation for dynamical spin injection into graphene
Graphene is an ideal material for spin transport as very long spin relaxation
times and lengths can be achieved even at room temperature. However, electrical
spin injection is challenging due to the conductivity mismatch problem. Spin
pumping driven by ferromagnetic resonance is a neat way to circumvent this
problem as it produces a pure spin current in the absence of a charge current.
Here, we show spin pumping into single layer graphene in micron scale devices.
A broadband on-chip RF current line is used to bring micron scale permalloy
(NiFe) pads to ferromagnetic resonance with a magnetic field
tunable resonance condition. At resonance, a spin current is emitted into
graphene, which is detected by the inverse spin hall voltage in a close-by
platinum electrode. Clear spin current signals are detected down to a power of
a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device
scheme paves the way for more complex device structures and allows the
investigation of novel materials.Comment: 7 pages, 4 figure
Large oscillating non-local voltage in multi-terminal single wall carbon nanotube devices
We report on the observation of a non-local voltage in a ballistic
one-dimensional conductor, realized by a single-wall carbon nanotube with four
contacts. The contacts divide the tube into three quantum dots which we control
by the back-gate voltage . We measure a large \emph{oscillating} non-local
voltage as a function of with zero mean. Though a classical
resistor model can account for a non-local voltage including change of sign, it
fails to describe the magnitude properly. The large amplitude of is
due to quantum interference effects and can be understood within the
scattering-approach of electron transport
Multi-wall carbon nanotubes as quantum dots
We have measured the differential conductance dI/dV of individual multi-wall
carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long
tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by
random conductance fluctuations (UCF) in long MWNT devices (L=2...7 ),
while Coulomb blockade and energy level quantization are observed in short ones
(L=300 nm). The electron levels of short MWNT dots are nearly four-fold
degenerate (including spin) and their evolution in magnetic field (Zeeman
splitting) agrees with a g-factor of 2. In zero magnetic field the sequential
filling of states evolves with spin S according to S=0 -> 1/2 -> 0... In
addition, a Kondo enhancement of the conductance is observed when the number of
electrons on the tube is odd.Comment: 10 pages, 4 figure
Local electrical tuning of the nonlocal signals in a Cooper pair splitter
A Cooper pair splitter consists of a central superconducting contact, S, from
which electrons are injected into two parallel, spatially separated quantum
dots (QDs). This geometry and electron interactions can lead to correlated
electrical currents due to the spatial separation of spin-singlet Cooper pairs
from S. We present experiments on such a device with a series of bottom gates,
which allows for spatially resolved tuning of the tunnel couplings between the
QDs and the electrical contacts and between the QDs. Our main findings are
gate-induced transitions between positive conductance correlation in the QDs
due to Cooper pair splitting and negative correlations due to QD dynamics.
Using a semi-classical rate equation model we show that the experimental
findings are consistent with in-situ electrical tuning of the local and
nonlocal quantum transport processes. In particular, we illustrate how the
competition between Cooper pair splitting and local processes can be optimized
in such hybrid nanostructures.Comment: 9 pages, 6 figures, 2 table
Resonant tunneling through a C60 molecular junction in liquid environment
We present electronic transport measurements through thiolated C
molecules in liquid environment. The molecules were placed within a
mechanically controllable break junction using a single anchoring group per
molecule. When varying the electrode separation of the C-modified
junctions, we observed a peak in the conductance traces. The shape of the
curves is strongly influenced by the environment of the junction as shown by
measurements in two distinct solvents. In the framework of a simple resonant
tunneling model, we can extract the electronic tunneling rates governing the
transport properties of the junctions.Comment: 13 pages, 4 figures. To appear in Nanotechnolog
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