The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

CuSbS2 (Chalcostibite) crystals were synthesized by the hot-injection method as triangular and spherical shaped structures. The crystals were inserted by spin coating technique as interfacial layers between Au metal and p-Si to investigate their electrical and photoresponse properties via I-V measurements under various light intensities. The XRD measurements were performed to show the crystalline structure of the spherical and triangular CuSbS2. The TEM images confirmed the triangular and spherical particle structures of the CuSbS2 crystals. The I-V measurements were performed under dark, 20–100 mW light intensities with 20 mW interval for spherical and triangular CuSbS2 photodiodes. In addition, diode parameters were extracted and discussed in the details. The results highlighted that triangular and spherical shaped structures have good photoresponse to the illumination and can be employed in the photodiode and photodetector applications. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.17401159 217M212Acknowledgements This work is supported by Selçuk University BAP office with the research Project Number 17401159 and TUBITAK (The Scientific and Technological Research Council of Turkey) under project number 217M212

The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

Cu2WSe4 nanosheets were synthesized by the hot-injection method and put as interfacial layers between Au metal and p-Si by spin coating technique to investigate their photoresponse and capacitor properties via I-V and C-V measurements, respectively. The XRD were operated to confirm crystalline structure of the Cu2WSe4. The TEM image revealed that the crystalline nanosheet structures of the Cu2WSe4. The I-V measurements were performed under dark and light illumination in the range 20 mW–100 mW light intensities with 20 mW interval. In addition, some diode parameters such as ideality factor, barrier height and series resistance were extracted via a various method and discussed in the details. The C-V measurements were employed for various frequency and voltages. The C-V characteristics of the device confirmed the strong dependence on the frequency and voltage. The results imparted that Au/Cu2WSe4/p-Si can be employed for photodiode, photodetector and capacitor applications. © 2018 Elsevier B.V.17401159 32-M-16 Canon Foundation for Scientific ResearchThe authors would like to thank to Selçuk University BAP office (Project Number 17401159 ) and Karamanoglu Mehmetbey University (Grand Number: 32-M-16 ) for Scientific Research Foundation

The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

Cu2WSe4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance–voltage (C–V) and conductance-voltage (G–V) measurements were performed on the Cu2WSe4/p-Si heterojunction device depending on wide range temperatures from 80 to 400 K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (Rs) and interface states density (Nss) were extracted from C–V and G–V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu2WSe4/p-Si device can be employed for controllable capacitor applications. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.17401159 32-M-16 Canon Foundation for Scientific Research, CFSRThe authors would like to thank to Selçuk University BAP office (Project Number 17401159) and Karamanoglu Mehmetbey University (Grand Number: 32-M-16) for Scientific Research Foundation. Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

WOS:000585740700005CuCo5S8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo5S8/p-Si heterojunction device to characterize the dielectric performance of the CuCo5S8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo5S8, and the results confirmed the crystalline structure of the CuCo5S8. While the detailed structures of the CuCo5S8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo5S8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo5S8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo5S8/p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage- and frequency-dependent dielectric properties of the Au/CuCo5S8/p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from - 2.5 V to + 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (epsilon ') and dielectric loss (epsilon '')), electric modulus (M ' and M ''), and ac electrical conductivity (sigma) were extracted from the C-V and G-V measurements and discussed in details. The results highlighted that the Au/CuCo5S8/p-Si heterojunction device has the frequency- and voltage-dependent dielectric characteristics, and can be considered as switching applications.TUBITAK (The Scientific and Technological Research Council of Turkey) supported this study with the Grand Number of 217M212. Authors would like to thank TUBITAK for supporting

A general review on the thiospinels and their energy applications

WOS:000701759100005Material science is one of the decisive tools toward engineering versatile compounds for numerous technological applications. Over the last decades, thiospinels have been attracting great interest because of their unique characteristics and potential utilizations offering innovative and interesting features. The characteristics of these transition metal sulfides play a key role in many different applications and make thiospinels an essential class of material. To the best of our knowledge, this work, for the first time, summarizes broadband studies on thiospinels reported in the literature. The scope of this review covers all synthesis methods applied over, the chemical and physical properties, and the clean energy applications of thiospinels, which have achieved tremendous significance. It underlined and proposed the challenges and future perspectives based on sulfur-based ternary compounds. Moreover, this review draws attention to the current and future research needs of thiospinel materials to improve and broaden their applications and thus commercialization. (C) 2021 Elsevier Ltd. All rights reserved

Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals

WOS:000519599500002Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed analysis on material characteristics of CuCo5S8 thin-film layer, the work is focused on the electrical characteristics of Au/CuCo5S8/Si diode to investigate its current-voltage, capacitance-voltage, and conductance-voltage characteristics under dark and illuminated conditions. CuCo5S8 nanocrystals with an average size of 5 nm are obtained using hot-injection method, and they are used to form thin-film interfacial layer between metal (Au) and semiconductor (Si). Under dark conditions, the diodes show about four orders in magnitude rectification rate and diode illumination results in efficient rectification with increase in intensity. The analysis of current-voltage curve results in non-ideal diode characteristics according to the thermionic emission model due to the existence of series resistances and interface states with interface layer. The measured current-voltage values are used to extract the main diode parameters under dark and illumination conditions. Under illumination, photogenerated carriers contribute to the current flow and linear photoconductivity behavior in photocurrent measurements with illumination shows the possible use of CuCo5S8 layer in Si-based photodiodes. This characteristic is also observed from the typical on/off illumination switching behavior for the photodiodes in transient photocurrent, photocapacitance, and photoconductance measurements with a quick response to the illumination. The deviations from ideality are also discussed by means of distribution of interface states and series resistance depending on the applied frequency and bias voltage.This study was supported by TUBITAK (The Scientific and Technological Research Council of Turkey) under Project Number 217M212