An FM-UWB Transceiver for Autonomous Wireless Systems

This thesis discusses the design and implementation of a transmitter and a receiver for an FM-UWB scheme in CMOS. The main challenge is to reach a power efficiency of better than 10 nJ/bit at a data rate of 100 kbit/s for both the transmitter and the receiver design. This thesis also discusses the design and implementation of a power management unit for an autonomous wireless system. The challenge in this design is to obtain a high efficiency DC-DC conversion using the switched capacitor topology and low voltage ripple at the output voltage.Electronic Research LaboratoryElectrical Engineering, Mathematics and Computer Scienc

An Assessment of ?-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration

Microelectronics & Computer EngineeringElectrical Engineering, Mathematics and Computer Scienc

SPICE Modeling of Single-Grain Si TFTs using BSIMSOI

Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement results. Furthermore, preliminary circuit simulations are executed.MicroelectronicsElectrical Engineering, Mathematics and Computer Scienc

Single Grain Si TFTs for RF and 3D ICs

Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the mobility surpass even the SOI counterparts. We have succeeded in controlling crystallographic orientation of the location-controlled Si grains as well, by combination of metal induced lateral crystallization and the micro-Czochralski process. Owing to the orientation control, uniformity in device properties approaches to the level of the SOI counterpart. Using the high performance single-grain (SG) Si TFTs, we have fabricated RF amplifier. The cut-off frequency of the RF device is 5.5 GHz with a channel length of 1.5 ?m. We have even succeeded to stack two SG-TFT layers with which CMOS inverters were fabricated. This will open several new applications in TFTs of RF wireless communication, 3D-ICs with device level integration, and flexible electronics.MicroelectronicsElectrical Engineering, Mathematics and Computer Scienc