Preparation and characterization of high-K dieletric material of CCTO by using microwave processing technique.

In this project, three different methods had been applied to synthesize high-k dielectric materials of CaCu3Ti40 12 (CCTO)

Effect Of Annealing Condition On The Electrical And Structural Properties Of Ferroelectric CCTO Prepared By Mechanical Alloying Technique.

Bahan elektroseramik ferroelektrik CaCu3Ti4012 (CCTO) telah disediakan dengan teknik pengaloian mekanikal terubahsuai dan tindak balas pepejal. Electroceramic ferroelectric material of CaCu3Ti40 12 (CCTO) was synthesized by modified mechanical alloying and solid state reaction techniques

Study of the side gate junctionless transistor in accumulation region

Mohd. Nizar Hamidon/ Jumiah Binti Hassan/ Arash Dehzangi/ Farhad Larki, Sawal Hamid Md Ali, Sabar Derita Hutagalung, Burhanuddin Yeop Majli

The Effect of Sintering Conditions on the Microstructure and Electrical Properties of Pb(Zr0.52Ti0.48)O3 Ceramic

Lead zirconatetitanate Pb(Zr0.52Ti0.48)O3, (PZT) from a mixture of commercial PbO, TiO2 and ZrO2 powders was successfully prepared using a planetary ball mill. The microstructure and electrical properties of PZT ceramic were found to be highly sensitive to the sintering condition. The influence of microstructure and electrical properties on the sintering condition of the samples was studied. SEM analysis indicated that a shorter sintering time with higher sintering temperature promotes fine structure and densification. This was proves where the relative density of the sintered PZT ceramics obtained was measured to be approximately 99% of the theoretical density. The electrical properties of the ceramic sintered at a higher temperature with a different sintering time were measured at high frequencies. The result revealed that different sintering conditions have a big impact on electrical behavior in a broad frequency region

High frequency response to the impedance complex properties of Nb-doped CaCu3Ti4O12 electroceramics

Impedance analyses was performed on undoped and Nb-doped CaCu3Ti4O12 (CaCu3Ti4−xNbxO12+x/2; x = 0, 0.01, 0.03, 0.05, 0.1) to investigate their electrical properties. The pellet samples were prepared using the solid state reaction method. Silver electrode was deposited on both pellets’ surfaces for electrical measurement. The thermally etched samples showed tiny bumped domains within the grains. The existence of both domain and grain boundaries are believed to strongly influence the dielectric constant of CaCu3Ti4O12 (CCTO). Undoped CCTO showed two arcs of impedance complex plane while Nb-doped samples have three arcs. Each arc represents the constituent elements of the CCTO. The highest frequency arc is evidence that CCTO consists of conductive domains which measure about 1 Ω and are insulated by two types of barriers, i.e. domain boundary and grain boundary

Characterization of microstructures evolution on electrical responses of CaCu3Ti4O12 ceramics

CaCu3Ti4O12 (CCTO) ceramics was prepared by solid state method. The raw materials of CaCO3, CuO, and TiO2 were ball milled for 1 h. The mixed powders were calcined at 900 oC for 12 h. The phase formations of calcined powders were analyzed by using X-ray Diffraction (XRD). The calcined powders were pressed into pellet shape at 300 MPa and then were sintered at 1020, 1030 and 1040 oC for 10 h, respectively. The sintered samples were subjected to XRD, Scanning Electron Microscopy (SEM) and Impedance Analyzer for phase formation, microstructural and dielectric measurement analysis respectively. XRD analysis shows the presence of CCTO and secondary phases for the calcined powders. The samples sintered at 1020 and 1040 oC show the formation of CCTO phase with trace of secondary phases while complete formation of CCTO single phase was obtained for the sample sintered at 1030 oC. SEM analysis shows the phenomena of abnormal grain growth for the samples sintered at 1020 and 1040 oC while fine grain was observed for the sample sintered at 1030 oC. Sample sintered at 1040 oC was the densest sample while the sample sintered at 1020 oC had the highest percent of porosity. The highest dielectric constant (-3748) was achieved for samples sintered at 1040 oC while the lowest dielectric loss (-0.025) was obtained for the samples sintered at 1020 oC. These results indicate that sintering temperatures effectively changed the properties of CCTO