Cached Sufficient Statistics for Efficient Machine Learning with Large Datasets

This paper introduces new algorithms and data structures for quick counting for machine learning datasets. We focus on the counting task of constructing contingency tables, but our approach is also applicable to counting the number of records in a dataset that match conjunctive queries. Subject to certain assumptions, the costs of these operations can be shown to be independent of the number of records in the dataset and loglinear in the number of non-zero entries in the contingency table. We provide a very sparse data structure, the ADtree, to minimize memory use. We provide analytical worst-case bounds for this structure for several models of data distribution. We empirically demonstrate that tractably-sized data structures can be produced for large real-world datasets by (a) using a sparse tree structure that never allocates memory for counts of zero, (b) never allocating memory for counts that can be deduced from other counts, and (c) not bothering to expand the tree fully near its leaves. We show how the ADtree can be used to accelerate Bayes net structure finding algorithms, rule learning algorithms, and feature selection algorithms, and we provide a number of empirical results comparing ADtree methods against traditional direct counting approaches. We also discuss the possible uses of ADtrees in other machine learning methods, and discuss the merits of ADtrees in comparison with alternative representations such as kd-trees, R-trees and Frequent Sets.Comment: See http://www.jair.org/ for any accompanying file

Theoretical analysis of spectral gain in a THz quantum cascade laser: prospects for gain at 1 THz

In a recent Letter [Appl. Phys. Lett. 82, 1015 (2003)], Williams et al. reported the development of a terahertz quantum cascade laser operating at 3.4 THz or 14.2 meV. We have calculated and analyzed the gain spectra of the quantum cascade structure described in their work, and in addition to gain at the reported lasing energy of ~= 14 meV, we have discovered substantial gain at a much lower energy of around 5 meV or just over 1 THz. This suggests an avenue for the development of a terahertz laser at this lower energy, or of a two-color terahertz laser.Comment: in press APL, tentative publication date 29 Sep 200

Method and apparatus for producing an image from a transparent object

The contrast produced from a photographic transparency is controlled by placing the transparency between a pair of partially reflecting mirrors forming walls of an optical cavity. Mirrors trap a collimated laser beam illuminating the transparency so that at least a portion of the beam energy is passed through the transparency plural times. The distance that the light beam travels between the mirrors is controlled as a function of the wavelength of the beam energy to control the phase of light interference in the beam passing through the transparency, thereby controlling the intensity of the beam derived from the mirror downstream of the transparency

RTS amplitudes in decanano n-MOSFETs with conventional and high-k gate stacks

Low frequency (LF) noise in MOSFETs has been a topic of interest to both academia and industry in recent years. It is becoming a major concern for analogue circuit performance, DRAM operation, and will eventually impact critically upon the reliability of digital logic especially as devices continue to scale towards nano dimensions. Random telegraph signals (RTS) caused by the capture and emission of carriers in traps at the Si/SiO/sub 2/ interface have been posited as a major component of low frequency noise in semiconductor devices. The change in the drain current associated with trapping events in defect states is usually referred to as the RTS amplitude. The magnitude of the RTS amplitude is largest in the subthreshold regime at lower gate voltages and is reduced in the strong inversion regime as mobile charge in the inversion layer increasingly screens out the electrostatic influence of the trapped charge. We study the magnitude of the RTS amplitudes in nano-CMOS devices with conventional and high- gate stacks. Traps at the front and back gate dielectric interfaces, as well as traps in the body of the dielectric are considered. The impact of poly gate depletion is also taken into account

c-axis Raman Scattering in MgB2: Observation of a Dirty-Limit Gap in the pi-bands

Raman scattering spectra from the ac-face of thick MgB2 single crystals were measured in zz, xz and xx polarisations. In zz and xz polarisations a threshold at around 29 cm^{-1} forms in the below Tc continuum but no pair-breaking peak is seen, in contrast to the sharp pair-breaking peak at around 100 cm^{-1} seen in xx polarisation. The zz and xz spectra are consistent with Raman scattering from a dirty superconductor while the sharp peak in the xx spectra argues for a clean system. Analysis of the spectra resolves this contradiction, placing the larger and smaller gap magnitudes in the sigma and pi bands, and indicating that relatively strong impurity scattering is restricted to the pi bands.Comment: Revised manuscript accepted for publication in Physical Review Letter