3,691 research outputs found

    Scintillator gamma-ray detectors with silicon photomultiplier readouts for high-energy astronomy

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    Space-based gamma-ray detectors for high-energy astronomy face strict constraints of mass, volume, and power, and must endure harsh operating environments. Scintillator materials have a long history of successful operation under these conditions, and new materials offer greatly improved performance in terms of efficiency, time response, and energy resolution. The use of scintillators in space remains constrained, however, by the mass, volume, and fragility of the associated light readout device, typically a vacuum photomultiplier tube (PMT). Recently developed silicon photomultipliers (SiPMs) offer gains and efficiencies similar to those of PMTs, but with greatly reduced mass and volume, high ruggedness, and no high-voltage requirements. We have therefore been investigating the use of SiPM readouts for scintillator gamma-ray detectors, with an emphasis on their suitability for space- and balloonbased instruments for high-energy astronomy. We present our most recent results, including spectroscopy measurements for lanthanum bromide scintillators with SiPM readouts, and pulse-shape discrimination using organic scintillators with SiPM readouts. We also describe potential applications of SiPM readouts to specific highenergy astronomy instrument concepts

    Quantum simulation costs for Suzuki-Trotter decomposition of quantum many-body lattice models

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    Quantum computers offer the potential to efficiently simulate the dynamics of quantum systems, a task whose difficulty scales exponentially with system size on classical devices. To assess the potential for near-term quantum computers to simulate many-body systems we develop a formalism to straightforwardly compute bounds on the number of Trotter steps needed to accurately simulate the time evolution of fermionic lattice models based on the first-order commutator scaling. We apply this formalism to two closely related many-body models prominent in condensed matter physics, the Hubbard and t-J models. We find that, while a naive comparison of the Trotter depth first seems to favor the Hubbard model, careful consideration of the model parameters and the allowable error for accurate simulation leads to a substantial advantage in favor of the t-J model. These results and formalism set the stage for significant improvements in quantum simulation costs.Comment: 20 pages, 10 figure

    Constraints in Quantum Geometrodynamics

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    We compare different treatments of the constraints in canonical quantum gravity. The standard approach on the superspace of 3--geometries treats the constraints as the sole carriers of the dynamic content of the theory, thus rendering the traditional dynamical equations obsolete. Quantization of the constraints in both the Dirac and ADM square root Hamiltonian approaches leads to the well known problems of time evolution. These problems of time are of both an interpretational and technical nature. In contrast, the geometrodynamic quantization procedure on the superspace of the true dynamical variables separates the issues of quantization from the enforcement of the constraints. The resulting theory takes into account states that are off-shell with respect to the constraints, and thus avoids the problems of time. We develop, for the first time, the geometrodynamic quantization formalism in a general setting and show that it retains all essential features previously illustrated in the context of homogeneous cosmologies.Comment: 36 pages, no figures, submitted to IJMPA, Rewording, Fixed Typo

    Si microwire-array solar cells

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    Si microwire-array solar cells with Air Mass 1.5 Global conversion efficiencies of up to 7.9% have been fabricated using an active volume of Si equivalent to a 4 μm thick Si wafer. These solar cells exhibited open-circuit voltages of 500 mV, short-circuit current densities (J_(sc)) of up to 24 mA cm^(-2), and fill factors >65% and employed Al_2O_3 dielectric particles that scattered light incident in the space between the wires, a Ag back reflector that prevented the escape of incident illumination from the back surface of the solar cell, and an a-SiN_x:H passivation/anti-reflection layer. Wire-array solar cells without some or all of these design features were also fabricated to demonstrate the importance of the light-trapping elements in achieving a high J_(sc). Scanning photocurrent microscopy images of the microwire-array solar cells revealed that the higher J_(sc) of the most advanced cell design resulted from an increased absorption of light incident in the space between the wires. Spectral response measurements further revealed that solar cells with light-trapping elements exhibited improved red and infrared response, as compared to solar cells without light-trapping elements

    High-performance Si microwire photovoltaics

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    Crystalline Si wires, grown by the vapor–liquid–solid (VLS) process, have emerged as promising candidate materials for lowcost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (L_n » 30 µm) and low surface recombination velocities (S « 70 cm·s^(-1)). Single-wire radial p–n junction solar cells were fabricated with amorphous silicon and silicon nitride surface coatings, achieving up to 9.0% apparent photovoltaic efficiency, and exhibiting up to ~600 mV open-circuit voltage with over 80% fill factor. Projective single-wire measurements and optoelectronic simulations suggest that large-area Si wire-array solar cells have the potential to exceed 17% energy-conversion efficiency, offering a promising route toward cost-effective crystalline Si photovoltaics

    Search for spin-polarized photoemission from GaAs using light with orbital angular momentum

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    Laser light with photon energy near the band gap of GaAs and in Laguerre-Gaussian modes with different amounts of orbital angular momentum was used to produce photoemission from unstrained GaAs. The degree of electron spin polarization was measured using a micro-Mott polarimeter and found to be consistent with zero with an upper limit of ∼3% for light with up to ±5h of orbital angular momentum. In contrast, the degree of spin polarization of 32.3 ± 1.4% using circularly polarized laser light at the as the same wavelength, which is typical for bulk GaAs photocathodes
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