Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures

We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, $B$, in the large filling factor limit. Vanishing resistance is observed in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, where m$^{*}$ is the effective mass, e is the charge, and \textit{f} is the microwave frequency. The dependence of the effect is reported as a function of \textit{f}, the temperature, and the power.Comment: Proc. EP2DS-15 [Nara (Japan), 14-18 July 2003]; 5 Pages, 10 Color Figure

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.Comment: 4 pages text, 4 color figure

Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.Comment: 4 pages, 4 color figure

Role of interference in MM-wave driven DC transport in two dimensional electron gas

In this paper we point out that in addition to the density of states effect proposed in Ref.\cite{durst,anderson} one should consider the effect of constructive interference between the multi-MM-wave-photon processes shown in Fig.2. This process enhances the dark value of the conductivity. When the sample is very pure, i.e., when the transport life time is very long, this interference effect quickly diminishes as the MM-wave frequency deviates from the cyclotron frequency. In this paper we also present the linear response theory in the presence of strong harmonic time-dependent perturbation

Weak localization in InSb thin films heavily doped with lead

The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless Pb-doped, the InSb films do not show any measurable or show very small WL effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18} cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly manifested SO scattering is observed. From the comparison of the experimental data on temperature dependence of the magnetoresistivity and sample resistance with the WL theory, the temperature dependence of the phase destroying time is determined. The determination is performed by fitting theoretical terms obtained from Kawabata's theory to experimental data on magnetoresistance. It is concluded that the dephasing process is connected to three separate interaction processes. The first is due to the SO scatterings and is characterized by temperature-independent relaxation time. The second is associated with the electron-phonon interaction. The third dephasing process is characterized by independent on temperature relaxation time tau_c. This relaxation time is tentatively ascribed to inelastic scattering at extended structural defects, like grain boundaries. The resulting time dephasing time shows saturation in its temperature dependence. The temperature dependence of the resistance of the InSb films can be explained by the electron-electron interaction for T2 K.Comment: 15 pages with 5 figure

Impurity and spin effects on the magneto-spectroscopy of a THz-modulated nanostructure

We present a grid-free DFT model appropriate to explore the time evolution of electronic states in a semiconductor nanostructure. The model can be used to investigate both the linear and the nonlinear response of the system to an external short-time perturbation in the THz regime. We use the model to study the effects of impurities on the magneto-spectroscopy of a two-dimensional electron gas in a nanostructure excited by an intense THz radiation. We do observe a reduction in the binding energy of the impurity with increasing excitation strength, and at a finite magnetic field we find a slow onset of collective spin-oscillations that can be made to vanish with a stronger excitation.Comment: LaTeX,10 pages with 11 embedded postscript figure

Far-infrared photo-conductivity of electrons in an array of nano-structured antidots

We present far-infrared (FIR) photo-conductivity measurements for a two-dimensional electron gas in an array of nano-structured antidots. We detect, resistively and spectrally resolved, both the magnetoplasmon and the edge-magnetoplasmon modes. Temperature-dependent measurements demonstrates that both modes contribute to the photo resistance by heating the electron gas via resonant absorption of the FIR radiation. Influences of spin effect and phonon bands on the collective excitations in the antidot lattice are observed.Comment: 5 pages, 3 figure

Non-adiabatic current generation in a finite width semiconductor ring

We consider a model of a semiconductor quantum ring of finite width in a constant perpendicular magnetic field. We show how a current of the same order as the persistent current can be generated non-adiabatically by a short intensive pulse in the Tera-Hertz regime.Comment: LaTeX, 4 pages with included eps figure

Fermion Chern Simons Theory of Hierarchical Fractional Quantum Hall States

We present an effective Chern-Simons theory for the bulk fully polarized fractional quantum Hall (FQH) hierarchical states constructed as daughters of general states of the Jain series, {\it i. e.} as FQH states of the quasi-particles or quasi-holes of Jain states. We discuss the stability of these new states and present two reasonable stability criteria. We discuss the theory of their edge states which follows naturally from this bulk theory. We construct the operators that create elementary excitations, and discuss the scaling behavior of the tunneling conductance in different situations. Under the assumption that the edge states of these fully polarized hierarchical states are unreconstructed and unresolved, we find that the differential conductance $G$ for tunneling of electrons from a Fermi liquid into {\em any} hierarchical Jain FQH states has the scaling behavior $G\sim V^\alpha$ with the universal exponent $\alpha=1/\nu$, where $\nu$ is the filling fraction of the hierarchical state. Finally, we explore alternative ways of constructing FQH states with the same filling fractions as partially polarized states, and conclude that this is not possible within our approach.Comment: 10 pages, 50 references, no figures; formerly known as "Composite Fermions: The Next Generation(s)" (title changed by the PRB thought police). This version has more references and a discussion of the stability of the new states. Published version. One erroneous reference is correcte

Adiabatic quantum pump in the presence of external ac voltages

We investigate a quantum pump which in addition to its dynamic pump parameters is subject to oscillating external potentials applied to the contacts of the sample. Of interest is the rectification of the ac currents flowing through the mesoscopic scatterer and their interplay with the quantum pump effect. We calculate the adiabatic dc current arising under the simultaneous action of both the quantum pump effect and classical rectification. In addition to two known terms we find a third novel contribution which arises from the interference of the ac currents generated by the external potentials and the ac currents generated by the pump. The interference contribution renormalizes both the quantum pump effect and the ac rectification effect. Analysis of this interference effect requires a calculation of the Floquet scattering matrix beyond the adiabatic approximation based on the frozen scattering matrix alone. The results permit us to find the instantaneous current. In addition to the current generated by the oscillating potentials, and the ac current due to the variation of the charge of the frozen scatterer, there is a third contribution which represents the ac currents generated by an oscillating scatterer. We argue that the resulting pump effect can be viewed as a quantum rectification of the instantaneous ac currents generated by the oscillating scatterer. These instantaneous currents are an intrinsic property of a nonstationary scattering process.Comment: 11 pages, 1 figur