Влияние проникающей радиации на параметры аналоговых компонентов базового матричного кристалла МН2ХА030

Structured arrays and master slice arrays are often used to reduce cost, design and test time for radiation hardened analog integrated circuits. One of such master slice arrays is МН2ХА030, which uses bipolar and junction field-effect transistors. The purpose of this article is to estimate the effect of ionizing radiation on the parameters of the operational amplifier OAmp2 and comparators ADComp1 and ADComp3 created on the МН2ХА030 master slice array. Еhe results of measurements of analog components after exposure to 60Co gamma quanta with an absorbed dose of up to 700 krad and a fast electron fluence of up to 2.9·1015 el./cm2 with an energy of 6 MeV are presented. The OAmp2 operational amplifier provides a satisfactory level of basic static parameters (input current, offset voltage, voltage gain) at a fast electron fluence of up to 3.7·1014 el./cm2 with an energy of 6 MeV. There are a decrease in the voltage gain and an increase in the offset voltage at electron fluence of greater than 1015 el./cm2. The latter can be caused by a decrease in the efficiency of the common-mode signal feedback integrated into operational amplifier with a significant drop in current gain of bipolar transistors. All considered analog components provide a satisfactory level of basic static parameters at a fast electron fluence of up to 3.7·1014 el./cm2 with an energy of 6 MeV and an absorbed dose of 60Co gamma quanta of at least 700 krad. It is assumed that resistance of OAmp2, ADComp1, ADComp3 to the action of 60Co gamma quanta is significantly higher and requires further research. The developed analog components can be used in signal reading devices required in front-end of sensors for space instrumentation and nuclear electronics.Для уменьшения стоимости, времени проектирования и испытаний радиационно-стойких аналоговых интегральных микросхем часто применяют базовые структурные и базовые матричные кристаллы. Одним из таких базовых матричных кристаллов является МН2ХА030, использующий в качестве активных элементов биполярные и полевые транзисторы, управляемые p-n-переходом. Целью статьи является оценка влияния проникающей радиации на статические параметры операционного усилителя OAmp2 и компараторов ADComp1 и ADComp3, изготовленных на базовом матричном кристалле МН2ХА030. Приведены результаты измерений основных параметров аналоговых компонентов после воздействия гамма-квантов 60Co с поглощенной дозой до 700 крад и флюенса быстрых электронов до 2,9·1015 эл./см2 с энергией 6 МэВ. Как следует из результатов измерений, операционный усилитель OAmp2 обеспечивает удовлетворительный уровень основных статических параметров (входной ток, напряжение смещения нуля, коэффициент усиления напряжения) при флюенсе быстрых электронов до 3,7·1014 эл./см2 с энергией 6 МэВ. При флюенсе быстрых электронов больше 1015 эл./см2 происходит спад коэффициента усиления напряжения и рост напряжения смещения нуля. Последнее может быть вызвано уменьшением эффективности встроенной в операционный усилитель обратной связи по синфазному сигналу при значительном спаде коэффициента усиления базового тока биполярных транзисторов. Все изученные аналоговые компоненты обеспечивают удовлетворительный уровень основных статических параметров при флюенсе быстрых электронов до 3,7·1014 эл./см2 с энергией 6 МэВ и поглощенной дозе гамма-квантов 60Co не менее 700 крад. Предполагается, что стойкость OAmp2, ADComp1, ADComp3 к воздействию гамма-квантов 60Co существенно выше и требует дальнейшего изучения. Разработанные аналоговые компоненты могут найти применение в устройствах считывания сигналов, необходимых в аналоговых интерфейсах датчиков космического приборостроения и ядерной электроники

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