A Comparative Study of Quantum Dot Solar Cell with Two Different ETLs of WS₂ and IGZO Using SCAPS-1D Simulator

Quantum dot solar cells have received significant attention in comparison to standard solar cells because of their hybrid nature, low production costs, and higher power conversion efficiency. Although quantum dot solar cells (QDSCs) have several benefits over ordinary solar cells, their performance lags due to carrier combination within the quasi-neutral region (QNR). The electron transport layer (ETL) and hole transport layer (HTL) are the two layers that have the most effect on QDSC performance. This numerical analysis is carried out by using the Solar Cell Capacitance Simulator-1 dimensional software (SCAPS-1D). In this paper, the optimization of two different device structure investigations is performed. In this proposed device structure, WS2 and IGZO are used as two ETL, CdS is used as a buffer layer, Sb2Se3 is used as an absorber layer, and PbS as HTL. Initially, the optimization of the device has been performed, followed by depth analysis of the doping densities. Resistance analysis is also performed to illustrate the effect of resistance on the device. Further, the impact of temperature on the device parameters is also represented, followed by a contour plot between thickness and bandgap for both devices. The impact of the series and shunt resistance on the performance of the solar cell is investigated. The effect of temperature is studied further, and it is observed that the solar device is temperature-sensitive. Finally, the optimized performance with IGZO ETL with PCE of 20.94% is achieved

Modeling and Simulation of Tin Sulfide (SnS)-Based Solar Cell Using ZnO as Transparent Conductive Oxide (TCO) and NiO as Hole Transport Layer (HTL)

This paper describes the simulation by Solar Cell Capacitance Simulator-1D (SCAPS-1D) software of ZnO/CdS/SnS/NiO/Au solar cells, in which zinc oxide (ZnO) is used as transparent conductive oxide (TCO) and nickel oxide (NiO) is used as a hole transport layer (HTL). The effects of absorber layer (SnS) thickness, carrier concentration, SnS defect density, NiO HTL, ZnO TCO, electron affinity and work function on cell performance have been evaluated. The effect of interface defect density of SnS/CdS on the performance of the heterojunction solar cell is also analysed. As the results indicate, a maximum power conversion efficiency of 26.92% was obtained

2D Nanomaterial-Based Surface Plasmon Resonance Sensors for Biosensing Applications

The absorption and binding energy of material plays an important role with a large surface area and conductivity for the development of any sensing device. The newly grown 2D nanomaterials like black phosphorus transition metal dichalcogenides (TMDCs) or graphene have excellent properties for sensing devices’ fabrication. This paper summarizes the progress in the area of the 2D nanomaterial-based surface plasmon resonance (SPR) sensor during last decade. The paper also focuses on the structure of Kretschmann configuration, the sensing principle of SPR, its characteristic parameters, application in various fields, and some important recent works related to SPR sensors have also been discussed, based on the present and future scope of this field. The present paper provides a platform for researchers to work in the field of 2D nanomaterial-based SPR sensors

Numerical Study to Enhance the Sensitivity of a Surface Plasmon Resonance Sensor with BlueP/WS₂-Covered Al₂O₃-Nickel Nanofilms

In the traditional surface plasmon resonance sensor, the sensitivity is calculated by the usage of angular interrogation. The proposed surface plasmon resonance (SPR) sensor uses a diamagnetic material (Al2O3), nickel (Ni), and two-dimensional (2D) BlueP/WS2 (blue phosphorous-tungsten di-sulfide). The Al2O3 sheet is sandwiched between silver (Ag) and nickel (Ni) films in the Kretschmann configuration. A mathematical simulation is performed to improve the sensitivity of an SPR sensor in the visible region at a frequency of 633 nm. The simulation results show that an upgraded sensitivity of 332°/RIU is achieved for the metallic arrangement consisting of 17 nm of Al2O3 and 4 nm of Ni in thickness for analyte refractive indices ranging from 1.330 to 1.335. The thickness variation of the layers plays a curial role in enhancing the performance of the SPR sensor. The thickness variation of the proposed configuration containing 20 nm of Al2O3 and 1 nm of Ni with a monolayer of 2D material BlueP/WS2 enhances the sensitivity to as high as 374°/RIU. Furthermore, it is found that the sensitivity can be altered and managed by means of altering the film portions of Ni and Al2O3</sub