Strong amplitude-phase coupling in submonolayer quantum dots

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 109, 201102 (2016) and may be found at https://doi.org/10.1063/1.4967833.Submonolayer quantum dots promise to combine the beneficial features of zero- and two-dimensional carrier confinement. To explore their potential with respect to all-optical signal processing, we investigate the amplitude-phase coupling (α-parameter) in semiconductor optical amplifiers based on InAs/GaAs submonolayer quantum dots in ultrafast pump-probe experiments. Lateral coupling provides an efficient carrier reservoir and gives rise to a large α-parameter. Combined with a high modal gain and an ultrafast gain recovery, this makes the submonolayer quantum dots an attractive gain medium for nonlinear optical signal processing

High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 92, 101123 (2008) and may be found at https://doi.org/10.1063/1.2898165.An optically pumped semiconductor disk laser using submonolayer quantum dots (SML QDs) as gain medium is demonstrated. High-power operation is achieved with stacked InAs∕GaAs SML QDs grown by metal-organic vapor-phase epitaxy. Each SML-QD layer is formed from tenfold alternate depositions of nominally 0.5 ML InAs and 2.3 ML GaAs. Resonant periodic gain from a 13-fold nonuniform stack design of SML QDs allows to produce 1.4W cw at 1034nm. The disk laser demonstrates the promising potential of SML-QD structures combining properties of QD and quantum-well gain media for high-power applications.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP6/016769/EU/Nano-Photonics Materials and Technologies for Multicolor High-Power Sources/NATA

Temperature-stable operation of a quantum dot semiconductor disk laser

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 93, 051104 (2008) and may be found at https://doi.org/10.1063/1.2968137.We demonstrate temperature-independent output characteristics of an optically pumped semiconductor disk laser (SDL) based on quantum dots (QDs) grown in the Stranski-Krastanow regime. The gain structure consists of a stack of 7×3 QD layers, each threefold group being located at an optical antinode position. The SDL emits at 1210nm independent of the pump power density. Threshold and differential efficiency do not dependent on heat sink temperature. Continuous-wave operation close to 300mW output power is achieved using the ground-state transition of the InGaAs QDs.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP6/016769/EU/Nano-Photonics Materials and Technologies for Multicolor High-Power Sources/NATA

Improved threshold of buried heterostructure InAs/GaInAsP quantum dot lasers

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 109, 083104 (2011) and may be found at https://doi.org/10.1063/1.3574406.The parameters for reducing the threshold current density of InAs/InGaAsP/InP quantum-dot (QD) lasers suitable for high temperature operation are studied. The structures were grown using metalorganic vapor phase epitaxy. Increasing the number of QD layers leads to a substantial improvement of the optical confinement and a markedly reduced threshold per dot layer in broad area devices. A reduction of the spacer thickness between the QD layers was not found to significantly affect device characteristics. Depending upon the device length, an optimum number of QD layers was deduced. Based upon optimized QD stacks, buried-heterostructure lasers with a medium device length emitting at 1.5 μm were fabricated. Laterally single-mode devices show promising low threshold currents near 10 mA and good thermal stability with a characteristic temperature of 65 K up to 90 °C.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k⋅p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed

Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 102, 123102 (2013) and may be found at https://doi.org/10.1063/1.4798520.In0.25Ga0.75As/GaAs quantum dots grown by metalorganic vapor-phase epitaxy in a GaP matrix have been investigated on the atomic scale using cross-sectional scanning tunneling microscopy. The quantum dots have a truncated pyramidal shape with a reversed cone stoichiometry profile. All deposited indium is found within the quantum dots and the occasionally observed quantum rings, while the wetting layer has a GaAsP composition without any indium inside. This indicates an intense lateral material transfer during growth.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 101, 211119 (2012) and may be found at https://doi.org/10.1063/1.4767525.Electrical operation of single photon emitting devices employing site-controlled quantum dot (QD) growth is demonstrated. An oxide aperture acting as a buried stressor structure is forcing site-controlled QD growth, leading to both QD self-alignment with respect to the current path in vertical injection pin-diodes and narrow, jitter-free emission lines. Emissions from a neutral exciton, a neutral bi-exciton, and a charged exciton are unambiguously identified. Polarization-dependent measurements yield an exciton fine-structure splitting of (84 ± 2) μeV at photon energies of 1.28–1.29 eV. Single-photon emission is proven by Hanbury Brown and Twiss experiments yielding an anti-bunching value of g(2)(0) = 0.05 under direct current injection.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 101, 223110 (2012) and may be found at https://doi.org/10.1063/1.4768294.Coherent In0.25Ga0.75As quantum dots (QDs) are realized on GaP(001) substrates by metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a thin GaAs interlayer prior to In0.25Ga0.75As deposition. Luminescence is observed between 2.0 eV and 1.83 eV, depending on the thickness of the In0.25Ga0.75As layer. The critical thickness for the two-dimensional to three-dimensional transition of the layer is determined to 0.75 to 1.0 monolayers. A mean activation energy of 489 meV for holes captured by In0.25Ga0.75As quantum dots is measured by deep-level transient spectroscopy, yielding a hole storage time of 3 µs at room temperature.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 107, 201102 (2015) and may be found at https://doi.org/10.1063/1.4935792.Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeDFG, 87159868, GRK 1558: Kollektive Dynamik im Nichtgleichgewicht: in kondensierter Materie und biologischen Systeme

Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 93, 221102 (2008) and may be found at https://doi.org/10.1063/1.3040322.One-dimensional photonic crystal lasers emitting in the 850 nm range show high internal quantum efficiencies of 93% and very narrow vertical beam divergence of 7.1° (full width at half maximum). 50m broad area lasers with unpassivated facets exhibit a high total output power of nearly 20 W in pulsed mode with a divergence of 9.5°×11.3° leading to a record brightness of 3×108Wcm−2sr−1, being presently the best value ever reported for a single broad area laser diode. 100m broad devices with unpassivated facets show continuous wave operation with an output power of 1.9 W.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement