4,370 research outputs found

    GeV-TeV and X-ray flares from gamma-ray bursts

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    The recent detection of delayed X-ray flares during the afterglow phase of gamma-ray bursts (GRBs) suggests an inner-engine origin, at radii inside the deceleration radius characterizing the beginning of the forward shock afterglow emission. Given the observed temporal overlapping between the flares and afterglows, there must be inverse Compton (IC) emission arising from such flare photons scattered by forward shock afterglow electrons. We find that this IC emission produces GeV-TeV flares, which may be detected by GLAST and ground-based TeV telescopes. We speculate that this kind of emission may already have been detected by EGRET from a very strong burst--GRB940217. The enhanced cooling of the forward shock electrons by the X-ray flare photons may suppress the synchrotron emission of the afterglows during the flare period. The detection of GeV-TeV flares combined with low energy observations may help to constrain the poorly known magnetic field in afterglow shocks. We also consider the self-IC emission in the context of internal-shock and external-shock models for X-ray flares. The emission above GeV from internal shocks is low, while the external shock model can also produce GeV-TeV flares, but with a different temporal behavior from that caused by IC scattering of flare photons by afterglow electrons. This suggests a useful approach for distinguishing whether X-ray flares originate from late central engine activity or from external shocks.Comment: slightly shortened version, accepted for publication in ApJ Letters, 4 emulateapj pages, no figure

    Microscopic theory of the low frequency Raman modes in germanium nanocrystals

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    We have studied the Raman intensities of low-frequency phonon modes in germanium (Ge) nanocrystals (NC) with varying sizes by using a microscopic valence force field model. The results are compared with the predictions of the continuum model of Lamb using a projection method. We found that the l=0 spheroidal Lamb modes are Raman active in the parallel polarization scattering geometry, while the l=2 spheroidal Lamb modes are active in the crossed polarization geometry. This result agrees with the group theory prediction that the torsional Lamb modes are not Raman active, but is in disagreement with the identification of torsional Lamb modes in the crossed polarization Raman spectra of NC suggested by many authors

    Valley Dependent Optoelectronics from Inversion Symmetry Breaking

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    Inversion symmetry breaking allows contrasted circular dichroism in different k-space regions, which takes the extreme form of optical selection rules for interband transitions at high symmetry points. In materials where band-edges occur at noncentral valleys, this enables valley dependent interplay of electrons with light of different circular polarizations, in analogy to spin dependent optical activities in semiconductors. This discovery is in perfect harmony with the previous finding of valley contrasted Bloch band features of orbital magnetic moment and Berry curvatures from inversion symmetry breaking [Phys. Rev. Lett. 99, 236809 (2007)]. A universal connection is revealed between the k-resolved optical oscillator strength of interband transitions, the orbital magnetic moment and the Berry curvatures, which also provides a principle for optical measurement of orbital magnetization and intrinsic anomalous Hall conductivity in ferromagnetic systems. The general physics is demonstrated in graphene where inversion symmetry breaking leads to valley contrasted optical selection rule for interband transitions. We discuss graphene based valley optoelectronics applications where light polarization information can be interconverted with electronic information.Comment: Expanded version, to appear in Phys. Rev.

    Microscopic investigation of phonon modes in SiGe alloy nanocrystals

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    Phonon modes in spherical silicon germanium alloy (SiGe) nanocrystals containing up to 1147 atoms (3.6 nm) have been investigated as a function of the Si concentration. Microscopic details of phonon modes, including phonon frequencies and vibrational amplitudes, phonon density-of-states are calculated directly from the dynamic matrices. In particular, the dependence of phonon frequency on the configuration (such as a different ratio of Si to Ge atoms), and location (surface or interior) of clusters of atoms in SiGe alloy nanocrystals have been investigated. Low frequency surface phonons that are related to the spheroidal and torsional modes of a continuum sphere are identified and their frequency dependence on alloy concentration elucidated. The calculated results are compared with measured Raman spectra in bulk, thin films, and superlattices of SiGe alloy reported in the literature. Insights into the behavior of Raman peaks usually identified as Ge-Ge, Si-Si, and Ge-Si optical phonon modes are presented

    Theoretical investigation of the surface vibrational modes in germanium nanocrystals

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    We have used a microscopic lattice dynamical model to study phonon modes in germanium (Ge) NC with size varying between 47 to 7289 atoms (diametersimilar to6.8 nm). By separating these atoms into bulk and surface atoms we have found that surface modes can exist in Ge NC both at low frequencies (\u3c50\u3ecm(-1)) and at high frequency (similar to260 cm(-1)). The latter mode is a resonant mode which occurs in the pseudogap between the acoustic and optical phonon branches in bulk Ge. From the low frequency surface modes we have been able to reconstruct the spheroidal and torsional Lamb modes which have been used to interpret experimental results. Finally, we found that the Lamb model starts to deviate from the lattice dynamical results for Ge NC with diameternm

    Non-substitutional single-atom defects in the Ge_(1-x)Sn_x alloy

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    Ge_(1-x)Sn_x alloys have proved difficult to form at large x, contrary to what happens with other group IV semiconductor combinations. However, at low x they are typical examples of well-behaved substitutional compounds, which is desirable for harnessing the electronic properties of narrow band semiconductors. In this paper, we propose the appearance of another kind of single-site defect (βSn\beta-Sn), consisting of a single Sn atom in the center of a Ge divacancy, that may account for these facts. Accordingly, we examine the electronic and structural properties of these alloys by performing extensive numerical ab-initio calculations around local defects. The results show that the environment of the β\beta defect relaxes towards a cubic octahedral configuration, facilitating the nucleation of metallic white tin and its segregation, as found in amorphous samples. Using the information stemming from these local defect calculations, we built a simple statistical model to investigate at which concentration these β\beta defects can be formed in thermal equilibrium. These results agree remarkably well with experimental findings, concerning the critical concentration above which the homogeneous alloys cannot be formed at room temperature. Our model also predicts the observed fact that at lower temperature the critical concentration increases. We also performed single site effective-field calculations of the electronic structure, which further support our hypothesis.Comment: 12 pages, 1 table, 16 figure

    Casimir scaling as a test of QCD vacuum

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    Recent accurate measurements of static potentials between sources in various representations of the gauge group SU(3) performed by G.Bali provide a crucial test of the QCD vacuum models and different approaches to confinement. The Casimir scaling of the potential observed for all measured distances implies strong suppression of higher cumulant contributions. The consequences for the instanton vacuum model and the spectrum of the QCD string are also discussed.Comment: LaTeX, 15 pages, 1 figur

    Three-dimensional calculation of supersonic reacting flows using an LU scheme

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    A new three-dimensional numerical program incorporated with comprehensive real gas property models was developed to simulate supersonic reacting flows. The code employs an implicit finite volume, Lower-Upper (LU) time-marching method to solve the complete Navier-Stokes and species equations in a fully-coupled and very efficient manner. A chemistry model with nine species and eighteen reaction steps are adopted in the program to represent the chemical reaction of H2 and air. To demonstrate the capability of the program, flow fields of underexpanded hydrogen jets transversely injected into supersonic air stream inside the combustors of scramjets are calculated. Results clearly depict the flow characteristics, including the shock structure, separated flow regions around the injector, and the distribution of the combustion products

    Three-dimensional calculations of supersonic reacting flows using an LU scheme

    Get PDF
    A 3-D numerical program that incorporates comprehensive real gas property models was developed to simulate supersonic reacting flows. The code employs an implicit, finite volume, Lower-Upper (LU), time-marching method to solve the complete Navier-Stokes and species equations in a fully-coupled and efficient manner. A chemistry model with 9 species and 18 reaction steps is adopted in the program to represent the chemical reactions of H2 and air. To demonstrate the capability of the program, flow fields of underexpanded hydrogen jets transversely injected into the supersonic airstream inside the combustors of scramjets are calculated. Results clearly depict the flow characteristics, including the shock structure, the separated flow regions around the injector, and the distribution of the combustion products
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