69 research outputs found

    Low-Frequency Imaginary Impedance at the Superconducting Transition of 2H-NbSe2

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    The superconducting transition leads to a sharp resistance drop in a temperature interval that can be a small fraction of the critical temperature Tc. A superconductor exactly at Tc is thus very sensitive to all kinds of thermal perturbation, including the heat dissipated by the measurement current. We show that the interaction between electrical and thermal currents leads to a sizable imaginary impedance at frequencies of the order of tens of hertz at the resistive transition of single crystals of the layered material 2H-NbSe2.We explain the result using models developed for transition-edge sensors. By measuring under magnetic fields and at high currents, we find that the imaginary impedance is strongly influenced by the heat associated with vortex motion and out-of-equilibrium quasiparticles

    Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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    We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices

    Electron wave and quantum optics in graphene

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    In the last decade, graphene has become an exciting platform for electron optical experiments, in some aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states, e.g., snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers

    Electron quantum optics in graphene

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    In the last decade, graphene has become an exciting platform for electron optical experiments, in many aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states, e.g., snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers

    Long-range propagation and interference of d-wave superconducting pairs in graphene

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    Resumen del trabajo presentado a la Conference Low dimensional superconducting hybrids for novel quantum functionalities, celebrada en Paris (Francia) del 12 al 14 de octubre de 2021.Peer reviewe

    Netartophilie

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    Le Net Art a dû exister un bref instant dans la tête de quelques-uns il y a une douzaine d’années, quand dire Net Art ne servait à rien. Dès lors qu’il y eut l’envie que soit accordée aux pratiques une légitimité dans le monde de l’art, les libertés se sont estompées, les clans se sont formés, la rhétorique est venue nourrir les conflits et les bavardages. On peut penser que sur Internet les artistes reconnus ou anonymes sont égaux. Mais dans la vie (In Real Life), ce n’est pas le cas. Les pr..

    Effet de proximité entre un supraconducteur à haute température critique et du graphène

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    We have fabricated YBCO graphene junction. We studied the electronical transport at the interface between these two materials as well as the mechanism - the Andreev reflexion- by which a current carried by electrons is transformed into a current carried by Cooper pairs. We observed electronic interferences as a function of graphene doping. This modulation comes from the presence of a potential barrier at the interface between YBCO and graphene in which the particles are circulating before being transmitted or reflected. These interferences correspond to Klein tunneling of normal electrons when their energy is higher than the superconducting gap. At lower energy, Cooper pairs can traverse the barrier by Klein tunneling. We later fabricated YBCO graphene junctions which size is comparable to the graphene coherence length. We observed tunnel conductance when the interface between graphene and YBCO is opaque. In the case when the interface is transparent, we observed oscillations of the junction conductance as a function of the bias voltage and of the gate voltage. These oscillations seem to originate from electronic interferences inside the graphene channel between the superconducting electrodes. We also propose an experimental method to fabricate phi junction based on BSCCO.Nous avons fabriqué des jonctions YBCO graphène, nous avons étudié dans un premier temps le transport électronique à l'interface entre ces deux matériaux ainsi que le mécanisme - la réflexion d'Andreev - par lequel un courant porté par des électrons est transformé en courant par des paires de Cooper. Nous avons observé des interférences électroniques en fonction du niveau de dopage du graphène. Ces interférences correspondent au tunneling de Klein d'électrons normaux quand l'énergie de ces électrons dépassent le gap supraconducteur. A plus basse énergie, ce sont les paires de Cooper qui passent la barrière par effet tunnel de Klein. Dans un deuxième temps, nous avons fabriqué des jonctions YBCO graphène dont la taille est comparable à la longueur de cohérence du graphène. Nous avons observé d'une part un comportement tunnel de la conductance dans le cas où l'interface graphène YBCO est sale. Dans le cas où l'interface YBCO graphène est propre, nous avons observé des oscillations de la conductance de la jonction en fonction de la tension de biais ainsi que de la tension de grille. Ces oscillations semblent provenir d'interférences électroniques dans le canal de graphène entre les électrodes supraconductrices. Enfin, nous présentons une nouvelle méthode de fabrication de jonction phi à base de BSCCO
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