New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors

Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-Level. This remarkable new anisotropy is independent of the current direction and depends on the polarity of the magnetic field.Comment: 3 Pages, 4 figures, Latex, uses elsart.cls and physart.cls, to be published in Physica E Added reference, made contact configuration more clea

Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure

The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also accounted for by considering the pressure dependencies of both the phonon frequencies and the hole-phonon coupling constants involved in the scattering rates.Comment: 13 pages, Latex, 4 ps figures. to appear in High Pressure Research 69 (1997

Proximity effect in Nb-Mo layered films: Transition temperature and critical current dependence on period

The behavior of the transition temperature and critical current density for a Mo/Nb repeated bilayer system as a function of the number of periods was explored. The measured values of the transition temperature are compared to the theoretical predictions for the proximity effect in the dirty limit. We find that the transition temperature does not decrease as the number of periods increase. In addition, inductive critical current density measurements also show a scaling that indicates the superconductivity properties are not dependent on the number of bilayers.Comment: 13 pages, 6 figures, to be published Journal of Applied Physic

Patterning of ultrathin YBCO nanowires using a new focused-ion-beam process

Manufacturing superconducting circuits out of ultrathin films is a challenging task when it comes to patterning complex compounds, which are likely to be deteriorated by the patterning process. With the purpose of developing high-T$_c$ superconducting photon detectors, we designed a novel route to pattern ultrathin YBCO films down to the nanometric scale. We believe that our method, based on a specific use of a focused-ion beam, consists in locally implanting Ga^{3+} ions and/or defects instead of etching the film. This protocol could be of interest to engineer high-T$_c$ superconducting devices (SQUIDS, SIS/SIN junctions and Josephson junctions), as well as to treat other sensitive compounds.Comment: 13 pages, 7 figure

Драматичні елементи у фольклорі – традиція та актуальність

The researches of the folklore and ethnographic sources underscore, that the dramatic elements exist in the folk art (songs, fairy tales, small folklore genres, children folklore etc.), in customs and in the other forms of the life of the folk. But it's importaint what I mean by the notion "dramatic elements in the folklore". Namely, existence of the action, plot, culmination and denouement, then the place and time of the development of the action, monologue, dialogue in the action, characters, masks, dresses, text, scenography, scenario, director, audience, puppet-show, i. e. the presence of the performance. In this paper special attention is given to some dramatic acting with multitude of the dramatic elements, which are connected with large quantity of the Cristmas holidays. We also drew parallels between traditional forms and new elements of celebration and results of the actualization of some innovations in society. It is worth to refer the carnivals in Vechani and Strumitsa and also celebrations of the Eve in Skopje

Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system

Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons and holes in a 20 nm HgTe quantum well. A large nonlocal electric response is found near the charge neutrality point (CNP) in the presence of a perpendicular magnetic field. We attribute the observed nonlocality to the edge state transport via counter propagating chiral modes similar to the quantum spin Hall effect at zero magnetic field and graphene near Landau filling factor $\nu=0$Comment: 5 pages, 4 figure

Long-range nonlocal flow of vortices in narrow superconducting channels

We report a new nonlocal effect in vortex matter, where an electric current confined to a small region of a long and sufficiently narrow superconducting wire causes vortex flow at distances hundreds of inter-vortex separations away. The observed remote traffic of vortices is attributed to a very efficient transfer of a local strain through the one-dimensional vortex lattice, even in the presence of disorder. We also observe mesoscopic fluctuations in the nonlocal vortex flow, which arise due to "traffic jams" when vortex arrangements do not match a local geometry of a superconducting channel.Comment: a slightly longer version of a tentatively accepted PR

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V – 1 s – 1 for a sheet density of 6.2 × 1011 cm – 2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication

Proton acceleration by irradiation of isolated spheres with an intense laser pulse

We report on experiments irradiating isolated plastic spheres with a peak laser intensity of 2-3 x 10(20) W cm(-2). With a laser focal spot size of 10 mu m full width half maximum (FWHM) the sphere diameter was varied between 520 nm and 19.3 mu m. Maximum proton energies of similar to 25 MeV are achieved for targets matching the focal spot size of 10 mu m in diameter or being slightly smaller. For smaller spheres the kinetic energy distributions of protons become nonmonotonic, indicating a change in the accelerating mechanism from ambipolar expansion towards a regime dominated by effects caused by Coulomb repulsion of ions. The energy conversion efficiency from laser energy to proton kinetic energy is optimized when the target diameter matches the laser focal spot size with efficiencies reaching the percent level. The change of proton acceleration efficiency with target size can be attributed to the reduced cross-sectional overlap of subfocus targets with the laser. Reported experimental observations are in line with 3D3V particle in cell simulations. They make use of well-defined targets and point out pathways for future applications and experiments.DFG via the Cluster of Excellence Munich-Centre for Advanced Photonics (MAP) Transregio SFB TR18NNSA DE-NA0002008Super-MUC pr48meIvo CermakCGC Instruments in design and realization of the Paul trap systemIMPRS-APSLMUexcellent Junior Research FundDAAD|ToIFEEuropean Union's Horizon research and innovation programme 633053Physic

Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics

In this article, an overview of the fabrication and properties of high quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 {\mu}B/Mn, a Curie temperature of 350 K and a residual resistivity of 60 {\mu}{\Omega}cm. These results indicate that high quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high quality films, all properties have to be adressed. For LSMO devices, the thin film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices.Comment: Accepted for publication in Journal of Physics D - Applied Physic