Electrically Controlled Reversible Strain Modulation in MoS2_2 Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited by low thermal tolerance, lack of tunability and/or poor scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electro-mechanically coupled ultra-thin 2D MoS$_2$. Electrical bias polarity change across the piezoelectric film tunes the nature of strain transferred to MoS$_2$ from compressive $\sim$0.23% to tensile $\sim$0.14% as verified through peak shifts in Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, built on a silicon substrate, uniquely integrates an MoS$_2$ field-effect transistor on top of a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current 130$\times$, on/off current ratio 150$\times$, and mobility 1.19$\times$ with high precision, reversibility and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, easy electrical strain modulation, high thermal tolerance and substrate compatibility make this technique promising for integration with silicon-based CMOS and micro-electro-mechanical systems.Comment: Manuscript and Supplementary Informatio

Interlayer-engineered high remnant polarization (2Pr_r > 70μ\muC/cm2^2) in Hf0.5_{0.5}Zr0.5_{0.5}O2_2 thin films

In this letter, we report a high remnant polarization, 2P$_r$ > 70$\mu$C/cm$^2$ in thermally processed atomic layer deposited Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) film on Silicon with NH$_3$ plasma exposed thin TiN interlayer and Tungsten (W) as a top electrode. The effect of interlayer on the ferroelectric properties of HZO is compared with standard Metal-Ferroelectric-Metal and Metal-Ferroelectric-Semiconductor structures. The x-ray diffraction confirms that the thickness of the interlayer plays an important role to enhance the orthorhombic ferroelectric phase. The HRTEM images reveal that TiN acts as a seed layer for the local epitaxy in HZO and hence a 2X improvement in remnant polarization. Finally, the HZO devices are shown to be wake-up free, and exhibit endurance $>10^6$ cycles. This study opens a pathway to achieve epitaxial ferroelectric HZO films on Si with improved memory performance.Comment: 4 pages, 4 figure

Understanding the Effects of Tetrahedral Site Occupancy by the Zn Dopant in Li-NMCs toward High-Voltage Compositional–Structural–Mechanical Stability via Operando and 3D Atom Probe Tomography Studies

Ni-containing “layered”/cation-ordered LiTMO2s (TM = transition metal) suffer from Ni-migration to the Li-layer at the unit cell level, concomitant transformation to a spinel/rock salt structure, hindrance toward Li-transport, and, thus, fading in Li-storage capacity during electrochemical cycling (i.e., repeated delithiation/lithiation), especially upon deep delithiation (i.e., going to high states-of-charge). Against this backdrop, our previously reported work [ACS Appl. Mater. Interfaces 2021, 13, 25836–25849] revealed a new concept toward blocking the Ni-migration pathway by placing Zn2+ (which lacks octahedral site preference) in the tetrahedral site of the Li-layer, which, otherwise, serves as an intermediate site for the Ni-migration to the Li-layer. This, nearly completely, suppressed the Ni-migration, despite being deep delithiated up to a potential of 4.7 V (vs Li/Li+) and, thus, resulted in significant improvement in the high-voltage cyclic stability. In this regard, by way of conducting operando synchrotron X-ray diffraction, operando stress measurements, and 3D atom probe tomography, the present work throws deeper insights into the effects of such Zn-doping toward enhancing the structural–mechanical–compositional integrity of Li-NMCs upon being subjected to deep delithiation. These studies, as reported here, have provided direct lines of evidence toward notable suppression of the variations of lattice parameters of Li-NMCs, including complete prevention of the detrimental “c-axis collapse” at high states-of-charges and concomitant slower-cum-lower electrode stress development, in the presence of the Zn-dopant. Furthermore, the Zn-dopant has been found to also prevent the formation of Ni-enriched regions at the nanoscaled levels in Li-NMCs (i.e., Li/Ni-segregation or “structural densification”) even upon being subjected to 100 charge/discharge cycles involving deep delithiation (i.e., up to 4.7 V). Such detailed insights based on direct/real-time lines of evidence, which reveal important correlations between the suppression of Ni-migration and high-voltage compositional–structural–mechanical stability, hold immense significance toward the development of high capacity and stable “layered” Li-TM-oxide based cathode materials for the next-generation Li-ion batteries