Impact of RbF-PDT on Cu(In,Ga)Se

Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers

Impact of Ag content on device properties of Cu(In,Ga)Se

Partial substitution of Cu by Ag in Cu(In,Ga)Se2 (CIGS) solar cells is advantageous as it allows lower temperature growth while maintaining high performance. To understand the role of Ag on device performance, we present a comprehensive analysis of (Ag,Cu)(In,Ga)Se2 (ACIGS) samples with an [Ag]/([Ag]+[Cu]) (AAC) ratio varying from 7% to 22%. The analysis involves a set of material and device characterization techniques as well as numerical simulations. Multiple electrical and material properties show a systematic dependence on the increased Ag content. These include a carrier-density decrease, a grain-size increase, and a flattened [Ga]/([Ga] + [In]) (GGI) profile leading to a higher minimum band gap energy and a reduced back grading. Although the best performing device (PCE = 18.0%) in this set has an AAC = 7%, cells with higher Ag contents have an advantage of a smoother absorber surface which is attractive for tandem applications, despite their slightly inferior conversion efficiencies (PCE = 16.4% for 22% Ag)

Toward scalable perovskite-based multijunction solar modules

status: publishe

Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

In this article, we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS) compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation

Scalable perovskite/CIGS thin-film solar module with power conversion efficiency of 17.8%

© 2017 The Royal Society of Chemistry. All-thin film perovskite/CIGS multijunction solar modules, combining a semi-transparent perovskite top solar module stacked on a CIGS bottom solar module, are a promising route to surpass the efficiency limits of single-junction thin-film solar modules. In this work, we present a scalable thin-film perovskite/CIGS photovoltaic module with an area of 3.76 cm2and a power conversion efficiency of 17.8%. Our prototype outperforms both the record single-junction perovskite solar module of the same area as well as the reference CIGS solar module. The presented perovskite/CIGS thin-film multijunction solar module makes use of the "4-terminal architecture", which stacks the perovskite solar module in superstrate configuration on top of the CIGS solar module in substrate configuration. Both submodules apply a scalable interconnection scheme that can accommodate scale-up towards square meter scale thin-film multijunction solar modules. In order to identify the future potential of the presented stacked perovskite/CIGS thin-film solar module, we quantify the various losses in the presented prototype and identify the key challenges of this technology towards very high power conversion efficiencies.crosscheck: This document is CrossCheck deposited related_data: Supplementary Information identifier: U. W. Paetzold (ORCID) identifier: U. W. Paetzold (ResearcherID) identifier: M. Jaysankar (ResearcherID) identifier: W. Qiu (ORCID) identifier: J. Bastos (ORCID) copyright_licence: The Royal Society of Chemistry has an exclusive publication licence for this journal history: Received 23 February 2017; Accepted 19 April 2017; Accepted Manuscript published 19 April 2017; Advance Article published 10 May 2017; Version of Record published 23 May 2017status: publishe