12,590 research outputs found
Observation of two-orbital spin-exchange interactions with ultracold SU(N)-symmetric fermions
We report on the direct observation of spin-exchanging interactions in a
two-orbital SU(N)-symmetric quantum gas of ytterbium in an optical lattice. The
two orbital states are represented by two different (meta-)stable electronic
configurations of fermionic Yb-173. A strong spin-exchange between particles in
the two separate orbitals is mediated by the contact interaction between atoms,
which we characterize by clock shift spectroscopy in a 3D optical lattice. We
find the system to be SU(N)-symmetric within our measurement precision and
characterize all relevant scattering channels for atom pairs in combinations of
the ground and the excited state. Elastic scattering between the orbitals is
dominated by the antisymmetric channel, which leads to the strong spin-exchange
coupling. The exchange process is directly observed, by characterizing the
dynamic equilibration of spin imbalances between two large ensembles in the two
orbital states, as well as indirectly in atom pairs via interaction shift
spectroscopy in a 3D lattice. The realization of a stable SU(N)-symmetric
two-orbital Hubbard Hamiltonian opens the route towards experimental quantum
simulation of condensed-matter models based on orbital interactions, such as
the Kondo lattice model.Comment: Correction: In the original version of this preprint the assignment
of states with symmetric electronic wavefunction (|eg+>) and with
antisymmetric electronic wavefunction (|eg->) to the observed spectral lines
was inverted. This has been corrected in the current version. The results of
the paper remain unchanged, with the exchange coupling being inverted to a
ferromagnetic exchang
Non-equilibrium Thermodynamics of Spacetime
It has previously been shown that the Einstein equation can be derived from
the requirement that the Clausius relation dS = dQ/T hold for all local
acceleration horizons through each spacetime point, where dS is one quarter the
horizon area change in Planck units, and dQ and T are the energy flux across
the horizon and Unruh temperature seen by an accelerating observer just inside
the horizon. Here we show that a curvature correction to the entropy that is
polynomial in the Ricci scalar requires a non-equilibrium treatment. The
corresponding field equation is derived from the entropy balance relation dS
=dQ/T+dS_i, where dS_i is a bulk viscosity entropy production term that we
determine by imposing energy-momentum conservation. Entropy production can also
be included in pure Einstein theory by allowing for shear viscosity of the
horizon.Comment: 4 pages. Dedicated to Rafael Sorkin on the occasion of his 60th
birthda
Speed limits for quantum gates in multi-qubit systems
We use analytical and numerical calculations to obtain speed limits for
various unitary quantum operations in multiqubit systems under typical
experimental conditions. The operations that we consider include single-, two-,
and three-qubit gates, as well as quantum-state transfer in a chain of qubits.
We find in particular that simple methods for implementing two-qubit gates
generally provide the fastest possible implementations of these gates. We also
find that the three-qubit Toffoli gate time varies greatly depending on the
type of interactions and the system's geometry, taking only slightly longer
than a two-qubit controlled-NOT (CNOT) gate for a triangle geometry. The speed
limit for quantum-state transfer across a qubit chain is set by the maximum
spin-wave speed in the chain.Comment: 7 pages (two-column), 2 figures, 2 table
Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200â60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drainâcurrent is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60â10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gateâgate coupling contribute to the drainâcurrent for pillar thicknesses between 100â40 nm
Selective darkening of degenerate transitions for implementing quantum controlled-NOT gates
We present a theoretical analysis of the selective darkening method for
implementing quantum controlled-NOT (CNOT) gates. This method, which we
recently proposed and demonstrated, consists of driving two
transversely-coupled quantum bits (qubits) with a driving field that is
resonant with one of the two qubits. For specific relative amplitudes and
phases of the driving field felt by the two qubits, one of the two transitions
in the degenerate pair is darkened, or in other words, becomes forbidden by
effective selection rules. At these driving conditions, the evolution of the
two-qubit state realizes a CNOT gate. The gate speed is found to be limited
only by the coupling energy J, which is the fundamental speed limit for any
entangling gate. Numerical simulations show that at gate speeds corresponding
to 0.48J and 0.07J, the gate fidelity is 99% and 99.99%, respectively, and
increases further for lower gate speeds. In addition, the effect of
higher-lying energy levels and weak anharmonicity is studied, as well as the
scalability of the method to systems of multiple qubits. We conclude that in
all these respects this method is competitive with existing schemes for
creating entanglement, with the added advantages of being applicable for qubits
operating at fixed frequencies (either by design or for exploitation of
coherence sweet-spots) and having the simplicity of microwave-only operation.Comment: 25 pages, 5 figure
Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3Ă108 and a steep sub-threshold slope of 110 mV/dec
Partial-measurement back-action and non-classical weak values in a superconducting circuit
We realize indirect partial measurement of a transmon qubit in circuit
quantum electrodynamics by interaction with an ancilla qubit and projective
ancilla measurement with a dedicated readout resonator. Accurate control of the
interaction and ancilla measurement basis allows tailoring the measurement
strength and operator. The tradeoff between measurement strength and qubit
back-action is characterized through the distortion of a qubit Rabi oscillation
imposed by ancilla measurement in different bases. Combining partial and
projective qubit measurements, we provide the solid-state demonstration of the
correspondence between a non-classical weak value and the violation of a
Leggett-Garg inequality.Comment: 5 pages, 4 figures, and Supplementary Information (8 figures
Dust absorption and scattering in the silicon K-edge
The composition and properties of interstellar silicate dust are not well
understood. In X-rays, interstellar dust can be studied in detail by making use
of the fine structure features in the Si K-edge. The features in the Si K-edge
offer a range of possibilities to study silicon-bearing dust, such as
investigating the crystallinity, abundance, and the chemical composition along
a given line of sight. We present newly acquired laboratory measurements of the
silicon K-edge of several silicate-compounds that complement our measurements
from our earlier pilot study. The resulting dust extinction profiles serve as
templates for the interstellar extinction that we observe. The extinction
profiles were used to model the interstellar dust in the dense environments of
the Galaxy. The laboratory measurements, taken at the Soleil synchrotron
facility in Paris, were adapted for astrophysical data analysis and implemented
in the SPEX spectral fitting program. The models were used to fit the spectra
of nine low-mass X-ray binaries located in the Galactic center neighborhood in
order to determine the dust properties along those lines of sight. Most lines
of sight can be fit well by amorphous olivine. We also established upper limits
on the amount of crystalline material that the modeling allows. We obtained
values of the total silicon abundance, silicon dust abundance, and depletion
along each of the sightlines. We find a possible gradient of
dex/kpc for the total silicon abundance versus the Galactocentric distance. We
do not find a relation between the depletion and the extinction along the line
of sight.Comment: 18 pages, 16 figures. Accepted for publication in Astronomy and
Astrophysic
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