Low-Power consumption Franz-Keldysh effect plasmonic modulator

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 ${\mu}m$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.Comment: 8 pages, 6 figures, and 1 table. Published version: see https://doi.org/10.1364/OE.22.011236. Related works: see https://doi.org/10.1364/OE.25.010070, https://doi.org/10.1364/OE.26.030292, and https://doi.org/10.1364/OE.455491. Keywords: Integrated Optics; Silicon Photonics; Plasmonics; Modulators. arXiv admin note: text overlap with arXiv:2207.0931

Electroless deposition of Co-based barriers: selectivity, corrosion and growth properties.

International audienceElcctroless metallic caps are convincing alternatives to standard SiC(N) barriers for the 45 nm technology node and beyond to improve electromigration resistance and limit the dielectric constant of the structures. In this work, particular emphasis is put on possible selectivity issues, corrosion of the copper lines and nucleation/growth properties for two processes (Pd-activated Co\VP and Pd-free CoWB) deprniited in an industrial 300 mm equipment Co\VP process exhibits promising results for 12 nm nominal thickness. For both processes, the control of the preclean step seems to be fundamental to limit copper corrosion. Under optimal conditions, line resistance increase is limited to less than 3 %

Electroless deposition of NiMoPB : electrical performances and material properties

International audienceElectroless deposited Co-based caps are convicing alternatives to standard SiC(N) barriers for the 45 nm node and beyond to improve electromigration resistance and limit the dielectric constant of the structures. In this work, growth kinetics, process selectivity, microstructure and composition of an alternative self-initiated NiMoPB cap are reported for 300 mm fabrication. This process is very selective, and does not modify the electrical performances of the structures. The film presents very promising barrier properties against copper diffusion, due to a high quantity of phosphorus and refractory metal in the fihn

1.5-μm Directly Modulated Transmission over 66 km of SSMF with an Integrated Hybrid III-V/SOI DFB Laser

International audienceA hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μm is fabricated, showing a side mode suppression ratio above 50 dB and a 3-dB bandwidth of 12 GHz. Error-free transmission (BER<1e-9) at 10 Gb/s over 66-km SSMF is demonstrated without dispersion compensation and FEC

EPIGIST: An observational real-life study on patients with metastatic gastrointestinal stromal tumors receiving imatinib.

BACKGROUND:Gastrointestinal stromal tumors (GISTs) are rare, but represent the most common mesenchymal neoplasms of the gastrointestinal tract. EPIdemiology GIST, is an observational multicenter longitudinal follow-up cohort study reporting the prescribing patterns of imatinib in patients with GIST and the impact of the treatment in a real-world (standard clinical) setting. METHODS:Eligible patients had a confirmed diagnosis of unresectable or metastatic KIT-positive GIST and started treatment with imatinib for the first time between May 24, 2002, and June 30, 2010. During routine visits, annual collection of clinical characteristics was requested, i.e., age, GIST stage at diagnosis, history, imatinib treatment duration and dosage, adherence, and concomitant medications. Survival outcomes were estimated using the Kaplan-Meier method. Other data were analyzed using descriptive statistics. RESULTS:Of 151 patients enrolled, imatinib was initiated for 126 patients before enrollment and for 25 patients on the day of enrollment or soon after. The patient characteristics were similar to those in published prospective trials. The estimated 1-, 2-, 3-, and 4-year overall survival rates were 90.4% (95% confidence interval [CI; 84.8%-94.0%]), 84.7% (95% CI [78.1%-89.4%]), 73.0% (95% CI [65.0%-79.4%]), and 60.7% (95% CI [51.4%-68.8%]), respectively. The most common adverse events (AEs) were diarrhea (39%), asthenia (39%), eyelid or periorbital edema (32%), abdominal pain (23%), and anemia (21%). Eight of 126 serious AEs were possibly related to the treatment as assessed by investigators. CONCLUSIONS:Study results showed that patients in real-life populations are generally treated in accordance with national and international clinical recommendations and have outcomes comparable to those of patients in clinical trials

25-Gb/s transmission over 2.5-km SSMF by silicon MRR enhanced 1.55-μm III-V/SOI DML

International audienceThe use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-μm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER<; 10-9) at 25 Gb/s data rate over 2.5-km SSMF without dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications

25-Gb/s transmission over 2.5-km SSMF by silicon MRR Enhanced 1.55-µm III-V/SOI DML

International audienceThe use of a micro-ring resonator (MRR) to enhance the modulation extinction ratio and dispersion tolerance of a directly modulated laser (DML) is experimentally investigated with a bit rate of 25 Gb/s as proposed for the next generation data center communications. The investigated system combines a 11-GHz 1.55-µm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER< 1e−9) at 25 Gb/s data rate over 2.5-km SSMF without dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications