RF Magnetron Sputtering Deposition of TiO2 Thin Films in a Small Continuous Oxygen Flow Rate

Rutile titanium oxide (TiO2) thin films require more energy to crystallize than the anatase phase of TiO2. It is a prime candidate for micro-optoelectronics and is usually obtained either by high substrate temperature, applying a substrate bias, pulsed gas flow to modify the pressure, or ex situ annealing. In the present work, we managed to obtain high enough energy at the substrate in order for the particles to form rutile TiO2 at room temperature without any intentional substrate bias in a continuous gas flow. The rutile TiO2 thin films were deposited by a reactive radiofrequency magnetron sputtering system from a titanium target, in an argon/oxygen gas mixture. Investigations regarding the film’s structure and morphology were performed by X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDAX), while the optical properties were investigated by means of ellipsometry

Nanocrystalline graphite thin layers for low-strain, high-sensitivity piezoresistive sensing

Bulk nanocrystalline graphite has been investigated as a possible candidate for piezoresistive sensors. The thin films were grown using capacitively coupled plasma enhanced chemical vapor deposition and a technological workflow for the transfer of the active material onto flexible substrates was established in order to use the material as a piezoresitive element. Preliminary electrical measurements under mechanical strain were performed in order to test the piezoresistive response of the material and promising GF values of 50 − 250 at 1% strain were obtained

Step-By-Step Development of Vertically Aligned Carbon Nanotubes by Plasma-Enhanced Chemical Vapor Deposition

In this work, the growth process of self-sustained vertically aligned carbon nanotubes (VA-CNTs) is investigated in full: from bare Si wafers to fully grown VA-CNTs on 4″ wafers. Each developmental step, from supporting and catalyst layers’ depositions to CNT growth, is analyzed through X-ray diffraction, X-ray reflectivity, and scanning electron microscopy, respectively. The crystalline structure of the titanium nitride supporting layer is investigated through grazing incidence X-ray diffraction, while X-ray reflectivity provides information regarding the density, thickness, and roughness of the titanium nitride layer via extended Fourier analysis. Further, the nickel layers’ and CNTs’ morphologies are investigated by scanning electron microscopy

Evolution of Nanocrystalline Graphite’s Physical Properties during Film Formation

Nanocrystalline graphite (NCG) layers represent a good alternative to graphene for the development of various applications, using large area, complementary metal-oxide semiconductor (CMOS) compatible technologies. A comprehensive analysis of the physical properties of NCG layers—grown for different time periods via plasma-enhanced chemical vapour deposition (PECVD)—was conducted. The correlation between measured properties (thickness, optical constants, Raman response, electrical performance, and surface morphology) and growth time was established to further develop various functional structures. All thin films show an increased grain size and improved crystalline structure, with better electrical properties, as the plasma growth time is increased. Moreover, the spectroscopic ellipsometry investigations of their thickness and optical constants, together with the surface roughness extracted from the atomic force microscopy examinations and the electrical properties resulting from Hall measurements, point out the transition from nucleation to three-dimensional growth in the PECVD process around the five-minute mark