Indium Tin Oxide@Carbon Core–Shell Nanowire and Jagged Indium Tin Oxide Nanowire

This paper reports two new indium tin oxide (ITO)-based nanostructures, namely ITO@carbon core–shell nanowire and jagged ITO nanowire. The ITO@carbon core–shell nanowires (~50 nm in diameter, 1–5 μm in length,) were prepared by a chemical vapor deposition process from commercial ITO nanoparticles. A carbon overlayer (~5–10 in thickness) was observed around ITO nanowire core, which was in situ formed by the catalytic decomposition of acetylene gas. This carbon overlayer could be easily removed after calcination in air at an elevated temperature of 700°C, thus forming jagged ITO nanowires (~40–45 nm in diameter). The growth mechanisms of ITO@carbon core–shell nanowire and jagged ITO nanowire were also suggested

Side-by-Side In(OH)3 and In2O3 Nanotubes: Synthesis and Optical Properties

A simple and mild wet-chemical approach was developed for the synthesis of one-dimensional (1D) In(OH)3 nanostructures. By calcining the 1D In(OH)3 nanocrystals in air at 250 °C, 1D In2O3 nanocrystals with the same morphology were obtained. TEM results show that both 1D In(OH)3 and 1D In2O3 are composed of uniform nanotube bundles. SAED and XRD patterns indicate that 1D In(OH)3 and 1D In2O3 nanostructures are single crystalline and possess the same bcc crystalline structure as the bulk In(OH)3 and In2O3, respectively. TGA/DTA analyses of the precursor In(OH)3 and the final product In2O3 confirm the existence of CTAB molecules, and its content is about 6%. The optical absorption band edge of 1D In2O3 exhibits an evident blueshift with respect to that of the commercial In2O3 powders, which is caused by the increasing energy gap resulted from decreasing the grain size. A relatively strong and broad purple-blue emission band centered at 440 nm was observed in the room temperature PL spectrum of 1D In2O3 nanotube bundles, which was mainly attributed to the existence of the oxygen vacancies

Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy

Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film