369 research outputs found

    Numerical and experimental studies of the carbon etching in EUV-induced plasma

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    We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate

    The trion: two electrons plus one hole versus one electron plus one exciton

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    We first show that, for problems dealing with trions, it is totally hopeless to use the standard many-body description in terms of electrons and holes and its associated Feynman diagrams. We then show how, by using the description of a trion as an electron interacting with an exciton, we can obtain the trion absorption through far simpler diagrams, written with electrons and \emph{excitons}. These diagrams are quite novel because, for excitons being not exact bosons, we cannot use standard procedures designed to deal with interacting true fermions or true bosons. A new many-body formalism is necessary to establish the validity of these electron-exciton diagrams and to derive their specific rules. It relies on the ``commutation technique'' we recently developed to treat interacting close-to-bosons. This technique generates a scattering associated to direct Coulomb processes between electrons and excitons and a dimensionless ``scattering'' associated to electron exchange inside the electron-exciton pairs -- this ``scattering'' being the original part of our many-body theory. It turns out that, although exchange is crucial to differentiate singlet from triplet trions, this ``scattering'' enters the absorption explicitly when the photocreated electron and the initial electron have the same spin -- \emph{i}. \emph{e}., when triplet trions are the only ones created -- \emph{but not} when the two spins are different, although triplet trions are also created in this case. The physical reason for this rather surprising result will be given

    All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

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    We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-28^{28}SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz1/2^{-1/2} within a volume of 3×1073 \times 10^{-7} mm3^{3} at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm3^{3} the projection noise limit is below 100 fT Hz1/2^{-1/2}.Comment: 12 pages, 6 figures; additional experimental data and an extended theoretical analysis are added in the second versio

    Binding Energy of Charged Excitons in ZnSe-based Quantum Wells

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    Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29 A. The binding energies of X+ are about 25% smaller than the binding energy in the same structures. The magnetic field behavior of and X+ binding energies differ qualitatively. With growing magnetic field strength, increases its binding energy by 35-150%, while for X+ it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed

    Study of electron-irradiated silicon thin films using transient photocurrent spectroscopy

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    Electron irradiation of silicon thin films creates localised states, which degrade theiropto-electronic properties. We present a series of transient photocurrent spectroscopy (TPC)measurements on electron-irradiated amorphous and microcrystalline silicon films, annealed atprogressively increasing temperatures. This has enabled localised states associated with bothdangling bonds and conduction band tails to be examined over a wide energy range.Trends inthe evolution of the DOS following electron irradiation followed by isochronal annealing stepsindicate reductions in the deep defect density,which correlate with spin density. We also find asteepening of the conduction band tail slope in amorphous silicon on annealing. Both defectdensity and tail slope may be restored close to as-prepared material values. Earlier CPM dataare re-examined, and a similar trend in the valence band tail slope is indicated. Computersimulations predict that following e-irradiation changes in deep defect density primarily controlsolar cell performance, and will tend to obscure effects related to band tails

    Synchronous Behavior of Coupled Systems with Discrete Time

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    The dynamics of one-way coupled systems with discrete time is considered. The behavior of the coupled logistic maps is compared to the dynamics of maps obtained using the Poincare sectioning procedure applied to the coupled continuous-time systems in the phase synchronization regime. The behavior (previously considered as asynchronous) of the coupled maps that appears when the complete synchronization regime is broken as the coupling parameter decreases, corresponds to the phase synchronization of flow systems, and should be considered as a synchronous regime. A quantitative measure of the degree of synchronism for the interacting systems with discrete time is proposed.Comment: 4 pages, 2 figure

    Least Dependent Component Analysis Based on Mutual Information

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    We propose to use precise estimators of mutual information (MI) to find least dependent components in a linearly mixed signal. On the one hand this seems to lead to better blind source separation than with any other presently available algorithm. On the other hand it has the advantage, compared to other implementations of `independent' component analysis (ICA) some of which are based on crude approximations for MI, that the numerical values of the MI can be used for: (i) estimating residual dependencies between the output components; (ii) estimating the reliability of the output, by comparing the pairwise MIs with those of re-mixed components; (iii) clustering the output according to the residual interdependencies. For the MI estimator we use a recently proposed k-nearest neighbor based algorithm. For time sequences we combine this with delay embedding, in order to take into account non-trivial time correlations. After several tests with artificial data, we apply the resulting MILCA (Mutual Information based Least dependent Component Analysis) algorithm to a real-world dataset, the ECG of a pregnant woman. The software implementation of the MILCA algorithm is freely available at http://www.fz-juelich.de/nic/cs/softwareComment: 18 pages, 20 figures, Phys. Rev. E (in press

    Influence of the type of anaesthetic support on the development of postoperative cognitive dysfunction in gynecologic oncology patients

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    Aim. Determination of the influence of age and type of anesthesia on the patient’s cognitive abilities. Methods. 30 females who underwent surgical intervention were examined. The first group consisted of 14 patients who received general inhalational anesthesia, group 2 included 16 patients who received general inhalational anesthesia in combination with epidural anesthesia. All patients underwent neuropsychological testing at several stages: one day before the surgery, the first day after surgery, on day 28 after the surgery. Cognitive status was assessed using Mini-Mental State Examination (MMSE) and the clock-drawing test (CLOCK). Results. Given the combination of indices of both types of neuropsychological testing, postoperative cognitive dysfunction was diagnosed when a decrease by 10% or more of both MMSE and clock-drawing test and the MMSE score in patients with diagnosed postoperative cognitive dysfunction was less than 24 on both days 1 and 28. It should be noted that the results of testing before surgery in all groups of patients showed mild cognitive dysfunction. After the surgery, the measures of intellectual ability significantly decreased. The results of the analysis in the early recovery period in the group of patients who underwent combined anesthesia were significantly higher. And in the group of patients with combined anesthesia compared to the group that received only general anesthesia on day 28, cognitive indices were significantly higher: MMSE — pMW=0.041 and CLOCK — pMW Conclusion. General anesthesia combined with epidural anesthesia affects cognitive function of female patients less negatively than the use of general anesthesia alone

    Paramagnetic centers in amorphous and microcrystalline silicon irradiated with 2 МeV electrons

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    Amorphous and microcrystalline silicon are well known materials for thin film large area electronics. The defects in the material are an important issue for the device quality and the manufacturing process optimization. We study defects in thin film silicon with electron spin resonance (ESR). In order to vary the defect density in a wide range 2 MeV electron bombardment at 100 K was applied with dose as high as 10¹⁸ e*cm⁻². Samples were investigated after deposition, after irradiation and between the annealing steps. The spin density (Ns) in the material was varied over 3 orders of magnitude. Strong satellites with g≈2.010 and g≈2.000 were observed on the shoulders of the dangling bond line. The initial Ns and the shape of the resonance line were restored after annealing.Аморфний і мікрокристалічний кремній є широко відомими матеріалами для виробництва тонкоплівкової електроники великої площі. Дефекти у даних матеріалах відіграють вирішальну роль для якості пристроїв і оптимізації виробничих процесів. Ми досліджували тонкоплівковий гідрогенований кремній методом вимірів електронного парамагнитного резонансу (ЕПР). Для зміни щільності дефектів у широкому диапазоні зразки було опромінено електронами з енергією 2 МеВ. Зразки було досліджено після осадження, після опромінення і між етапами відпалу. Щільність спинів (Ns) в матеріалі змінювалась в межах 3-х порядків величини. З обох боків від центрального резонансу, що характеризує обірвані зв’язки кремнію, спостеригались потужні додаткові резонансні лінії (g≈2.010 и g≈2.000). Після відпалу форма резонансних ліній і щільність спинів поверталися до вихідних показників.Аморфный и микрокристаллический кремний являются широко известными материалами для производства тонкопленочной электроники большой площади. Дефекты в данных материалах играют решающую роль для качества приборов и оптимизации производственных процессов. Мы исследовали тонкопленочный гидрогенированный кремний методом измерений электронного парамагнитного резонанса (ЭПР). Для изменения плотности дефектов в широких пределах образцы облучались электронами с энергией 2 МэВ. Образцы исследовались после осаждения, после облучения и между стадиями отжига. Плотность спинов (Ns) в материале изменялась в пределах 3-х порядков величины. По обе стороны от центрального резонанса, характеризующего оборванные связи кремния, наблюдались мощные дополнительные резонансные линии (g≈2.010 и g≈2.000). После отжига форма резонансных линий и плотность спинов возвращались к исходным значениям
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