Quantum Hall activation gaps in bilayer graphene

We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $\nu=\pm4$ and $\nu=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.Comment: 4 pages, accepted version (just removed a few typos), will appear as Fast Track Communication in Solid State Commu

Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity

A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduced from X-ray photoelectron spectroscopy and transmission electron microscopy of the surfaces. We explain this dependence using an absorbing overlayer model. This method can be used for mapping graphene thickness over a region and is capable of estimating thickness of multilayer graphene films beyond that possible by XPS and Auger electron spectroscopy (AES).Comment: 14 pages, 9 figure

Ultraflexible and robust graphene supercapacitors printed on textiles for wearable electronics applications

Printed graphene supercapacitors have the potential to empower tomorrow’s wearable electronics. We report a solid-state flexible supercapacitor device printed on textiles using graphene oxide ink and a screen-printing technique. After printing, graphene oxide was reduced in situ via a rapid electrochemical method avoiding the use of any reducing reagents that may damage the textile substrates. The printed electrodes exhibited excellent mechanical stability due to the strong interaction between the ink and textile substrate. The unique hierarchical porous structure of the electrodes facilitated ionic diffusion and maximised the surface area available for the electrolyte/ active material interface. The obtained device showed outstanding cyclic stability over 10 000 cycles and maintained excellent mechanical flexibility, which is necessary for wearable applications. The simple printing technique is readily scalable and avoids the problems associated with fabricating supercapacitor devices made of conductive yarn, as previously reported in the literature

Nanolithography and manipulation of graphene using an atomic force microscope

We use an atomic force microscope (AFM) to manipulate graphene films on a nanoscopic length scale. By means of local anodic oxidation with an AFM we are able to structure isolating trenches into single-layer and few-layer graphene flakes, opening the possibility of tabletop graphene based device fabrication. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxidation we also show the influence of mechanical peeling and scratching with an AFM of few layer graphene sheets placed on different substrates.Comment: 11 pages text, 5 figure

Tunneling conductance in strained graphene-based superconductor: Effect of asymmetric Weyl-Dirac fermions

Based on the BTK theory, we investigate the tunneling conductance in a uniaxially strained graphene-based normal metal (NG)/ barrier (I)/superconductor (SG) junctions. In the present model, we assume that depositing the conventional superconductor on the top of the uniaxially strained graphene, normal graphene may turn to superconducting graphene with the Cooper pairs formed by the asymmetric Weyl-Dirac electrons, the massless fermions with direction-dependent velocity. The highly asymmetrical velocity, vy/vx>>1, may be created by strain in the zigzag direction near the transition point between gapless and gapped graphene. In the case of the highly asymmetrical velocity, we find that the Andreev reflection strongly depends on the direction and the current perpendicular to the direction of strain can flow in the junction as if there was no barrier. Also, the current parallel to the direction of strain anomalously oscillates as a function of the gate voltage with very high frequency. Our predicted result is found as quite different from the feature of the quasiparticle tunneling in the unstrained graphene-based NG/I/SG conventional junction. This is because of the presence of the direction-dependent-velocity quasiparticles in the highly strained graphene system.Comment: 18 pages, 7 Figures; Eq.13 and 14 are correcte

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable

Demonstration of a quantum nondemolition sum gate

The sum gate is the canonical two-mode gate for universal quantum computation based on continuous quantum variables. It represents the natural analogue to a qubit C-NOT gate. In addition, the continuous-variable gate describes a quantum nondemolition (QND) interaction between the quadrature components of two light fields. We experimentally demonstrate a QND sum gate, employing the scheme by R. Filip, P. Marek, and U.L. Andersen [\pra {\bf 71}, 042308 (2005)], solely based on offline squeezed states, homodyne measurements, and feedforward. The results are verified by simultaneously satisfying the criteria for QND measurements in both conjugate quadratures.Comment: 4 pages, 4 figure

Graphene based superconducting quantum point contacts

We investigate the Josephson effect in the graphene nanoribbons of length $L$ smaller than the superconducting coherence length and an arbitrary width $W$. We find that in contrast to an ordinary superconducting quantum point contact (SQPC) the critical supercurrent $I_c$ is not quantized for the nanoribbons with smooth and armchair edges. For a low concentration of the carriers $I_c$ decreases monotonically with lowering $W/L$ and tends to a constant minimum for a narrow nanoribbon with $W\lesssim L$. The minimum $I_c$ is zero for the smooth edges but $e\Delta_{0}/\hbar$ for the armchair edges. At higher concentrations of the carriers this monotonic variation acquires a series of peaks. Further analysis of the current-phase relation and the Josephson coupling strength $I_cR_N$ in terms of $W/L$ and the concentration of carriers revels significant differences with those of an ordinary SQPC. On the other hand for a zigzag nanoribbon we find that, similar to an ordinary SQPC, $I_c$ is quantized but to the half-integer values $(n+1/2)4e\Delta_{0}/\hbar$.Comment: 8 pages, 5 figure

Models of electron transport in single layer graphene

The main features of the conductivity of doped single layer graphene are analyzed, and models for different scattering mechanisms are presented.Comment: 15 pages. Submitted to the Proceedings of the ULTI symposium on Quantum Phenomena and Devices at Low Temperatures, Espoo, Finland, to be published in the Journ. of Low. Temp. Phy

Graphene: new bridge between condensed matter physics and quantum electrodynamics

Graphene is the first example of truly two-dimensional crystals - it's just one layer of carbon atoms. It turns out to be a gapless semiconductor with unique electronic properties resulting from the fact that charge carriers in graphene demonstrate charge-conjugation symmetry between electrons and holes and possess an internal degree of freedom similar to ``chirality'' for ultrarelativistic elementary particles. It provides unexpected bridge between condensed matter physics and quantum electrodynamics (QED). In particular, the relativistic Zitterbewegung leads to the minimum conductivity of order of conductance quantum $e^2/h$ in the limit of zero doping; the concept of Klein paradox (tunneling of relativistic particles) provides an essential insight into electron propagation through potential barriers; vacuum polarization around charge impurities is essential for understanding of high electron mobility in graphene; index theorem explains anomalous quantum Hall effect.Comment: misprints are fixed; to appear in special issue of Solid State Communication