Theory of rigid-plane phonon modes in layered crystals

The lattice dynamics of low-frequency rigid-plane modes in metallic (graphene multilayers, GML) and in insulating (hexagonal boron-nitride multilayers, BNML) layered crystals is investigated. The frequencies of shearing and compression (stretching) modes depend on the layer number {\EuScript N} and are presented in the form of fan diagrams. The results for GML and BNML are very similar. In both cases only the interactions (van der Waals and Coulomb) between nearest-neighbor planes are effective, while the interactions between more distant planes are screened. A comparison with recent Raman scattering results on low-frequency shear modes in GML [Tan {\it et al.}, arXiv:1106.1146v1 (2011)] is made. Relations with the low-lying rigid-plane phonon dispersions in the bulk materials are established. Master curves which connect the fan diagram frequencies for any given {\EuScript N} are derived. Static and dynamic thermal correlation functions for rigid-layer shear and compression modes are calculated. The results might be of use for the interpretation of friction force experiments on multilayer crystals

Piezoresponse force microscopy for polarity imaging of GaN

The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution

Thermionic Energy Conversion in the Twenty-First Century: Advances and Opportunities for Space and Terrestrial Applications

Thermionic energy conversion (TEC) is the direct conversion of heat into electricity by the mechanism of thermionic emission, the spontaneous ejection of hot electrons from a surface. Although the physical mechanism has been known for over a century, it has yet to be consistently realized in a manner practical for large-scale deployment. This perspective article provides an assessment of the potential of TEC systems for space and terrestrial applications in the twenty-first century, overviewing recent advances in the field and identifying key research challenges. Recent developments as well as persisting research needs in materials, device design, fundamental understanding, and testing and validation are discussed

Interaction of quasilocal harmonic modes and boson peak in glasses

The direct proportionality relation between the boson peak maximum in glasses, $\omega_b$, and the Ioffe-Regel crossover frequency for phonons, $\omega_d$, is established. For several investigated materials $\omega_b = (1.5\pm 0.1)\omega_d$. At the frequency $\omega_d$ the mean free path of the phonons $l$ becomes equal to their wavelength because of strong resonant scattering on quasilocal harmonic oscillators. Above this frequency phonons cease to exist. We prove that the established correlation between $\omega_b$ and $\omega_d$ holds in the general case and is a direct consequence of bilinear coupling of quasilocal oscillators with the strain field.Comment: RevTex, 4 pages, 1 figur

Low dimensional nanostructures of fast ion conducting lithium nitride

As the only stable binary compound formed between an alkali metal and nitrogen, lithium nitride possesses remarkable properties and is a model material for energy applications involving the transport of lithium ions. Following a materials design principle drawn from broad structural analogies to hexagonal graphene and boron nitride, we demonstrate that such low dimensional structures can also be formed from an s-block element and nitrogen. Both one- and two-dimensional nanostructures of lithium nitride, Li3N, can be grown despite the absence of an equivalent van der Waals gap. Lithium-ion diffusion is enhanced compared to the bulk compound, yielding materials with exceptional ionic mobility. Li3N demonstrates the conceptual assembly of ionic inorganic nanostructures from monolayers without the requirement of a van der Waals gap. Computational studies reveal an electronic structure mediated by the number of Li-N layers, with a transition from a bulk narrow-bandgap semiconductor to a metal at the nanoscale

A new Raman metric for the characterisation of graphene oxide and its derivatives

Raman spectroscopy is among the primary techniques for the characterisation of graphene materials, as it provides insights into the quality of measured graphenes including their structure and conductivity as well as the presence of dopants. However, our ability to draw conclusions based on such spectra is limited by a lack of understanding regarding the origins of the peaks. Consequently, traditional characterisation techniques, which estimate the quality of the graphene material using the intensity ratio between the D and the G peaks, are unreliable for both GO and rGO. Herein we reanalyse the Raman spectra of graphenes and show that traditional methods rely upon an apparent G peak which is in fact a superposition of the G and D’ peaks. We use this understanding to develop a new Raman characterisation method for graphenes that considers the D’ peak by using its overtone the 2D’. We demonstrate the superiority and consistency of this method for calculating the oxygen content of graphenes, and use the relationship between the D’ peak and graphene quality to define three regimes. This has important implications for purification techniques because, once GO is reduced beyond a critical threshold, further reduction offers limited gain in conductivity

Probing Mechanical Properties of Graphene with Raman Spectroscopy

The use of Raman scattering techniques to study the mechanical properties of graphene films is reviewed here. The determination of Gruneisen parameters of suspended graphene sheets under uni- and bi-axial strain is discussed and the values are compared to theoretical predictions. The effects of the graphene-substrate interaction on strain and to the temperature evolution of the graphene Raman spectra are discussed. Finally, the relation between mechanical and thermal properties is presented along with the characterization of thermal properties of graphene with Raman spectroscopy.Comment: To appear in the Journal of Materials Scienc

Raman spectroscopy as a versatile tool for studying the properties of graphene.

Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene