Modeling of novel resist technologies

In response to the difficulties posed by the resolution, line edge roughness, sensitivity (RLS) trade-off to traditional chemically amplified resist (CAR) systems used for extreme ultraviolet lithography, a number of novel resist technologies have been proposed. In this paper, the effect of quencher loading on three resist technologies is analyzed via an error propagation-based resist simulator. In order of increasing novelty as well as complexity, they are: Conventional CAR with quencher, CAR with photodecomposable base, and PSCAR 2.0, a CAR system with photodecomposable base as well as an EUV-activated UV-sensitive resist component. Simulation finds the more complicated resist systems trade in an increase in resist stochastics for improved deprotection slopes, yielding a net benefit in terms of line width roughness

Extreme ultraviolet mask surface cleaning effects on lithography process performance

Extreme UV (EUV) masks are expected to undergo cleaning processes in order to maintain the lifetimes necessary for high volume manufacturing. For this study, the impact of repetitive cleaning of EUV masks on imaging performance is evaluated. Two high quality industry standard EUV masks are used, with one of the masks undergoing repeated cleaning and the other one kept as a reference. Lithographic performance, in terms of process window analysis and line edge roughness, was monitored after every two cleans and was compared to the reference mask performance. Surface analysis by atomic force microscopy did not show changes in the midspatial frequency roughness measured after each clean. After a total of eight cleans, minimal degradation is observed in the lithographic performance of the mask. From these observations, the authors conclude that the cleaning cycles completed thus far did not damage the mask multilayer or the absorber structures. The cleaning cycles will be continued until significant loss in imaging fidelity is found. © 2010 American Vacuum Society

Influence of base and photoacid generator on deprotection blur in extreme ultraviolet photoresists and some thoughts on shot noise

A contact-hole deprotection blur metric has been used to monitor the deprotection blur of an experimental open platform resist (EH27) as the wt % of base and photoacid generator (PAG) were varied. A six times increase in base wt % is shown to reduce the size of successfully patterned 1:1 line-space features from 52 to 39 nm without changing deprotection blur. Corresponding isolated line edge roughness is reduced from 6.9 to 4.1 nm. A two times increase in PAG wt % is shown to improve 1:1 line-space patterning from 47 to 40 nm without changing deprotection blur or isolated line edge roughness. A discussion of improved patterning performance as related to shot noise and deprotection blur concludes with a speculation that the spatial distribution of PAG molecules has been playing some role, perhaps a dominant one, in determining the uniformity of photogenerated acids in the resists that have been studied. © 2008 American Vacuum Society

Impact of noise sources and optical design on defect detection sensitivity in extreme ultraviolet actinic pattern inspection tool

We discuss the impact of various noise sources and the optical design in bright field extreme ultraviolet (EUV) actinic inspection of mask features for defects in the patterned absorber. It is shown that an optimum pixel size is needed to maximize the defect signal-to-noise ratio (SNR) to balance the trade-off in increasing signal strength with shot noise from defect signal and the background pattern intensity (mask layout image) and speckle noise from the mask blank roughness. Moreover, we consider defocus showing that the EUV mask phase effect has an asymmetric impact on pattern defect SNR's through-focus behavior. The impact of defocus limits inspection performance based on defect SNR. Using critical defect sizes in a case study, we show the defect SNR performance of the limiting case and discuss the possibility of utilizing a nominal defocus in the inspection system to leverage the phase effect of EUV mask absorber to improve the defect SNR. A 50% improvement in defect SNR is shown to be possible by introducing a -50 nm nominal defocus into the bright field inspection system

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Background: As target feature sizes for EUV lithography shrink, it is becoming ever more important to understand the intricate details of photoresist materials, including the role of the "third dimension"- the dimension perpendicular to the wafer. With resist thicknesses shrinking toward the single-digit nanometer scale alongside target linewidths, small changes in resist performance in this dimension will have a greater overall effect on pattern quality. Aim: To use modeling to understand the effect that the third dimension has on resist performance, in particular the interplay between the third dimension and resist stochastics. Approach: We developed a three-dimensional version of the multivariate Poisson propagation model, a stochastic resist simulator. As a test case for the model, we explore the role of acid diffusion in the so-called third dimension by simulating 105 vias at a series of z-blur conditions. Results: Our model suggests that increased z-blur yields an improvement in both dose to size and pattern uniformity without sacrificing resolution. Conclusions: We have developed a 3D resist model that can simulate large numbers of contacts. Early results from the 3D model show improved patterning performance can be achieved by increasing the z-blur

Impact of noise sources and optical design on defect detection sensitivity in extreme ultraviolet actinic pattern inspection tool

We discuss the impact of various noise sources and the optical design in bright field extreme ultraviolet (EUV) actinic inspection of mask features for defects in the patterned absorber. It is shown that an optimum pixel size is needed to maximize the defect signal-to-noise ratio (SNR) to balance the trade-off in increasing signal strength with shot noise from defect signal and the background pattern intensity (mask layout image) and speckle noise from the mask blank roughness. Moreover, we consider defocus showing that the EUV mask phase effect has an asymmetric impact on pattern defect SNR's through-focus behavior. The impact of defocus limits inspection performance based on defect SNR. Using critical defect sizes in a case study, we show the defect SNR performance of the limiting case and discuss the possibility of utilizing a nominal defocus in the inspection system to leverage the phase effect of EUV mask absorber to improve the defect SNR. A 50% improvement in defect SNR is shown to be possible by introducing a -50 nm nominal defocus into the bright field inspection system

Impact of tool design on defect detection sensitivity in extreme ultraviolet actinic blank inspection

We discuss the impact of various tool design perspectives on defect detection sensitivity for dark-field-based extreme ultraviolet (EUV) actinic blank inspection. We consider the impact of pixel size, EUV source type, and photon collection efficiency on critical defect signal-to-noise ratio (SNR) performance. The results show that as the pixel size approaches the target defect image size, defect SNR increases, and that pixel size also determines the dominant noise source in the inspection system. Moreover, the choice of the EUV source affects the optimal numerical aperture (NA) and illumination settings. For plasma-discharged sources, more photons provided by larger partial coherent illumination can improve the defect SNR, while coherent illumination is needed to get a higher defect SNR for synchrotron-based source. In the end, we show that simply increasing the photon collection efficiency by using high-NA optics or increasing the source power cannot always improve the defect SNR. In a speckle-noise dominated situation, larger outer NA includes more noise than defect signal, thus resulting in a lower SNR. The impact of source power also saturates at a certain level as the system becomes speckle-noise limited compared to photon-noise limited

Efficient Fresnel zoneplate pattern data preparation for high-resolution nanofabrication

A Fresnel zoneplate is a diffractive optical element consisting of concentric rings (zones) for which the transmitted light produces a focal spot that is used in all wavelength regimes, including X-rays. The pattern of transmission openings determines the location of the spot and the sub-half wavelength size of the openings can adjust the intensity. Today, very general transmission zoneplate patterns are used for many special imaging and image compensation purposes. Manufacturing zoneplates require a zoneplate pattern file, which precisely describes the size, shape, and contour of the rings based on the desired optical properties of the lens. Generating such a pattern requires the delicate balance of achieving the required optical performance while maintaining manageable file sizes and computation times. Here we describe a new algorithm meeting these needs. By precisely controlling the number of shapes in each zone, the algorithm simultaneously optimizes the desired optical tolerances with the pattern file size

Extreme ultraviolet mask surface cleaning effects on lithography process performance

Extreme UV (EUV) masks are expected to undergo cleaning processes in order to maintain the lifetimes necessary for high volume manufacturing. For this study, the impact of repetitive cleaning of EUV masks on imaging performance is evaluated. Two high quality industry standard EUV masks are used, with one of the masks undergoing repeated cleaning and the other one kept as a reference. Lithographic performance, in terms of process window analysis and line edge roughness, was monitored after every two cleans and was compared to the reference mask performance. Surface analysis by atomic force microscopy did not show changes in the midspatial frequency roughness measured after each clean. After a total of eight cleans, minimal degradation is observed in the lithographic performance of the mask. From these observations, the authors conclude that the cleaning cycles completed thus far did not damage the mask multilayer or the absorber structures. The cleaning cycles will be continued until significant loss in imaging fidelity is found. © 2010 American Vacuum Society