Composite superconducting wires obtained by high-rate tinning in molten Bi-Pb-Sr-Ca-Cu-O system

The preparation of high-T(sub c) superconducting long composite wires by short-time tinning of the metal wires in a molten Bi-Pb-Sr-Ca-Cu-O compound is discussed. The application of this method to the high-T(sub c) materials is tested, possibly for the first time. The initial materials used for this experiment were ceramic samples with nominal composition Bi(1.5)Pb(0.5)Sr2Ca2Cu3O(x) and T(sub c) = 80 K prepared by the ordinary solid-state reaction, and industrial copper wires from 100 to 400 microns in diameter and from 0.5 to 1 m long. The continuously moving wires were let through a small molten zone (approximately 100 cubic mm). The Bi-based high-T(sub c) ceramics in a molten state is a viscous liquid and it has a strongly pronounced ability to spread on metal wire surfaces. The maximum draw rate of the Cu-wire, at which a dense covering is still possible, corresponds to the time of direct contact of wire surfaces and liquid ceramics for less than 0.1 s. A high-rate draw of the wire permits a decrease in the reaction of the oxide melt and Cu-wire. This method of manufacture led to the fabrication of wire with a copper core in a dense covering with uniform thickness of about h approximately equal to 5 to 50 microns. Composite wires with h approximately equal to 10 microns (h/d approximately equal to 0.1) sustained bending on a 15 mm radius frame without cracking during flexing

Composite superconducting wires obtained by high-rate tinning in molten Bi-Pb-Sr-Ca-Cu-O system

Long lengths of metal superconductor composites were prepared by passing a copper wire through the bismuth based molten oxide system at a constant speed. The key to successful composite preparation is the high pulling speed involved, which permits minimization of the severe interaction between the unbuffered metal surface and the oxide melt. Depending on the temperature of the melt and the pulling speed, a coating with different thickness and microstructure appeared. The nonannealed thick coatings contained a Bi2(Sr,Ca)2Cu1O6 phase as a major component. After relatively short time annealing at 800 C, both resistivity and initial magnetization versus temperature measurements show superconducting transitions beginning in the 110 to 115 K region. The effects of annealing and composition on obtained results are discussed. This method of manufacture led to the fabrication of wire with a copper core in a dense covering with uniform thickness of about h approximately equal to 5 to 50 microns. Composite wires with h approximately equal to 10 microns (h/d approximately equal to 0.1) sustained bending on a 15 mm radius frame without cracking during flexing

Thermoelectric properties of the bismuth telluride nanowires in the constant-relaxation-time approximation

Electronic structure of bismuth telluride nanowires with the growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using the parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. For a square nanowire, in the temperature range from 77 K to 500 K, the dependence of the Seebeck coefficient, the electron thermal and electrical conductivity as well as the figure of merit ZT on the nanowire thickness and on the excess hole concentration are investigated in the constant-relaxation-time approximation. The carrier confinement is shown to play essential role for square nanowires with thickness less than 30 nm. The confinement decreases both the carrier concentration and the thermal conductivity but increases the maximum value of Seebeck coefficient in contrast to the excess holes (impurities). The confinement effect is stronger for the direction [015] than for the direction [110] due to the carrier mass difference for these directions. The carrier confinement increases maximum value of ZT and shifts it towards high temperatures. For the p-type bismuth telluride nanowires with growth direction [110], the maximum value of the figure of merit is equal to 1.3, 1.6, and 2.8, correspondingly, at temperatures 310 K, 390 K, 480 K and the nanowire thicknesses 30 nm, 15 nm, and 7 nm. At the room temperature, the figure of merit equals 1.2, 1.3, and 1.7, respectively.Comment: 13 pages, 7 figures, 2 tables, typos added, added references for sections 2-