Photoelectric Properties in Amorphous Chalcogenide Glassy Semiconductor As40Se30S30 Films

Bipolar photoconductivity and bipolar drift of charge carriers have been established in amorphous chalcogenide glassy semiconductors As40Se30S30 films, obtained by ion-plasma rf sputtering, in contrast to the films of these materials obtained by thermal evaporation. Observed results were due to the lack of deep traps for electrons in the spectrum of localized film states obtained by ion sputtering

Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

The absence of deep traps for electrons in the spectrum of As40Se30S30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As40Se30S30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation

Structure and electronic properties of amorphous As40Se30S30 films prepared by ion-plasma sputtering method

The atomic and local structure, as well as the electrical, optical, photoelectrical properties and drift mobility of charge carriers in amorphous As40Se30S30 films, prepared by the method of RF ion-plasma sputtering (RF-films), were studied in comparison with those of the films, prepared by the method of thermal vacuum evaporation (TE-films). These two methods differ significantly in the conditions of substance vaporization and condensation of atoms on a substrate. It was found that the films fabricated by the different methods have differences in structure and electronic parameters. The essential differences in photoconductivity and transport phenomena are observed, too. It was concluded that RF As40Se30S30 films have a modified structure. This leads to changes in the spectrum of extended and localized electronic states in these films, which, in its turn, causes differences in their electronic properties