8 research outputs found
One loop renormalization of the 4-D Quantum Dilaton Gravity in Spherical symmetric background
We study the one loop renormalization in the most general metric-dilaton
theory with second derivative only. In constant background dilaton theory,
there are two types of gravity background which enable the theory
renormalizable at one-loop level. We show this concretely to discuss on the
spherical symmetric background.Comment: 7 pages, latex, no figures. This paper also available at HUPD-960
Structure of Chiral Phase Transitions at Finite Temperature in Abelian Gauge Theories
The mechanism of the chiral symmetry breaking is investigated in the
strong-coupling Abelian gauge theories at finite temperature. The
Schwinger-Dyson equation in Landau gauge is employed in the real time formalism
and is solved numerically within the framework of the instantaneous exchange
approximation including the effect of the hard thermal loop for the photon
propagator. It is found that the chiral symmetry is broken below the critical
temperature T for sufficiently large coupling. The chiral phase transition is
found to be of the 2nd order and the phase diagram on the plane is
obtained. It is investigated how the structure of the chiral phase transition
is affected by the hard thermal loops in the photon propagator.Comment: 15pages, uses epic.sty and eepic.st
Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma
The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400–1000 µs and the repetition rate was set to 10 Hz. A mixture of argon (Ar) and carbon tetrafluoride (CF4) gas was used as the etching gas and injected into the vacuum chamber. The impedance was changed with time, and the coil voltage and current were changed to follow it. During the discharge, about 3 kW of power was applied. The electron temperature and plasma density were measured by the double probe method. The plasma density in the etching region was 1018–1019 m−3. The target current increased with t burst width. The etching rate of Ar discharge at burst width of 1000 µs was 0.005 µm/min. Adding CF4 into Ar, the etching rate became 0.05 µm/min, which was about 10 times higher. The etching rate increased with burst width