Dominant Effect of Near-Interface Native Point Defects on ZnO Schottky Barriers

The authors used depth-resolved cathodoluminescence spectroscopy and current-voltage measurements to probe metal-ZnO diodes as a function of native defect concentration, oxygen plasma processing, and metallization. The results show that resident native defects in ZnO single crystals and native defects created by the metallization process dominate metal-ZnO Schottky barrier heights and ideality factors. Results for ZnO(0001) faces processed with room temperature remote oxygen plasmas to remove surface adsorbates and reduce subsurface native defects demonstrate the pivotal importance of crystal growth quality and metal-ZnO reactivity in forming near-interface states that control Schottky barrier properties

Polarity in ZnO nanowires: A critical issue for piezotronic and piezoelectric devices

The polar and piezoelectric nature of the wurtzite structure of ZnO nanowires with a high aspect ratio at nanoscale dimensions is of high interest for piezotronic and piezoelectric devices, but a number of issues related to polarity are still open and deserve a particular attention. In this context, chemical bath deposition offers a unique opportunity to select the O- or Zn-polarity of the resultant nanowires and is further compatible with the fabrication processes of flexible devices. The control and use of the polarity in ZnO nanowires grown by chemical bath deposition opens a new way to greatly enhance the performance of the related piezotronic and piezoelectric devices. However, polarity as an additional tunable parameter should be considered with care because it has a strong influence on many processes and properties. The present review is intended to report the most important consequences related to the polarity in ZnO nanowires for piezotronic and piezoelectric devices. After introducing the basic principles involving crystal polarity in ZnO, a special emphasis is placed on the effects of polarity on the nucleation and growth mechanisms of ZnO nanowires using chemical bath deposition, defect incorporation and doping, electrical contacts and device properties