1,007 research outputs found

    Magnetoresistance of disordered graphene: from low to high temperatures

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    We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from TT = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120240120-240 K. The maximum is observed at intermediate magnetic fields (B=26B=2-6 T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with TT and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples

    PMH19 A Rehabilitation Intervention to Help People With Severe Mental Illness Obtain and Keep a Paid Job: The Economic Evaluation

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    Ultrarobust calibration of an optical lattice depth based on a phase shift

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    We report on a new method to calibrate the depth of an optical lattice. It consists in triggering the intrasite dipole mode of the cloud by a sudden phase shift. The corresponding oscillatory motion is directly related to the intraband frequencies on a large range of lattice depths. Remarkably, for a moderate displacement, a single frequency dominates this oscillation for the zeroth and first order interference pattern observed after a sufficiently long time-of-flight. The method is robust against atom-atom interactions and the exact value of the extra external confinement of the initial trapping potential.Comment: 7 pages, 6 figure

    Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

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    Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10910^{-9} in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.Comment: 12 pages, 8 figure

    Wavelets techniques for pointwise anti-Holderian irregularity

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    In this paper, we introduce a notion of weak pointwise Holder regularity, starting from the de nition of the pointwise anti-Holder irregularity. Using this concept, a weak spectrum of singularities can be de ned as for the usual pointwise Holder regularity. We build a class of wavelet series satisfying the multifractal formalism and thus show the optimality of the upper bound. We also show that the weak spectrum of singularities is disconnected from the casual one (denoted here strong spectrum of singularities) by exhibiting a multifractal function made of Davenport series whose weak spectrum di ers from the strong one

    Atomic resolution interface structure and vertical current injection in highly uniform MoS2MoS_{2} heterojunctions with bulk GaN

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    The integration of two-dimensional MoS2MoS_{2} with GaNGaN recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial GaNGaN templates on sapphire substrates, whereas the growth of MoS2MoS_{2} on low-dislocation-density bulk GaN can be strategic for the realization of truly vertical devices. In this paper, we report the growth of ultrathin MoS2MoS_{2} films, mostly composed by single-layers (1L1L), onto homoepitaxial nGaNn-GaN on n+n^{+} bulk substrates by sulfurization of a pre-deposited MoOxMoO_{x} film. Highly uniform and conformal coverage of the GaNGaN surface was demonstrated by atomic force microscopy, while very low tensile strain (0.05%) and a significant p+p^{+}-type doping (4.5×1012cm24.5 \times 10^{12} cm^{-2}) of 1LMoS21L-MoS_{2} was evaluated by Raman mapping. Atomic resolution structural and compositional analyses by aberration-corrected electron microscopy revealed a nearly-ideal van der Waals interface between MoS2MoS_{2} and the GaGa-terminated GaNGaN crystal, where only the topmost GaGa atoms are affected by oxidation. Furthermore, the relevant lattice parameters of the MoS2/GaNMoS_{2}/GaN heterojunction, such as the van der Waals gap, were measured with high precision. Finally, the vertical current injection across this 2D/3D heterojunction has been investigated by nanoscale current-voltage analyses performed by conductive atomic force microscopy, showing a rectifying behavior with an average turn-on voltage Von=1.7VV_{on}=1.7 V under forward bias, consistent with the expected band alignment at the interface between p+p^{+} doped 1LMoS21L-MoS_{2} and nGaNn-GaN.Comment: 21 pages, 6 figure

    Unusual interplay between superconductivity and field-induced charge order in YBa2Cu3Oy

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    We present a detailed study of the temperature (T) and magnetic field (H) dependence of the electronic density of states (DOS) at the Fermi level, as deduced from specific heat and Knight shift measurements in underdoped YBa2Cu3Oy. We find that the DOS becomes field-independent above a characteristic field H_{DOS} and that the H_{DOS}(T) line displays an unusual inflection near the onset of the long range 3D charge-density wave order. The unusual S-shape of H_{DOS}(T) is suggestive of two mutually-exclusive orders that eventually establish a form of cooperation in order to coexist at low T. On theoretical grounds, such a collaboration could result from the stabilisation of a pair-density wave state, which calls for further investigations in this region of the phase diagramComment: 6 pages, 4 figure
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