Physiological measurement of the push-pull effect during flight

The Push-pull In-flight Research Program was a Canadian Forces sponsored set of experiments conducted during flight to investigate the bodily responses to +gz exposure when preceded by low, or negative, gz exposure. This type of exposure is known as the push-pull manoeuvre. It has been hypothesized that the physiological responses of the human body to this manoeuvre can lessen an individual pilot\u27s g tolerance, thereby making him or her more susceptible to g-induced loss of consciousness. The overall aim of this thesis was to instrument an aircraft and perform in-flight research to collect data for evaluation of this hypothesis. As a joint research venture, the Aerospace Engineering Test Establishment, in conjunction with the Defence and Civil Institute of Environmental Medicine, performed a series of in-flight trials using a highly-instrumented CF-18 aircraft to gather physiological data on a wide spectrum of test subjects. The end-goal of this flight testing and follow-on research is to design a microprocessor controlled anti-g valve for future use in high-performance aircraft. This thesis evaluates the instrumentation approach, test procedures, and data gathering conducted during this test program. Preliminary results indicate the existence of a push-pull effect. Specific attention is given to the difficulties encountered with conducting experimental physiological research in an ejection seat equipped, high-performance fighter aircraft, and the methods and equipment developed to overcome these challenges

Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

Atmospheric pressure chemical vapor deposition of Al₂O₃ is shown to provide excellent passivation of crystalline silicon surfaces.Surface passivation,permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10¹² cm⁻²) and a relatively low interface defect density (∼1 × 10¹¹ eV⁻¹ cm⁻²), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed

On effective surface recombination parameters

This paper examines two effective surface recombination parameters: the effective surface recombination velocity Seff and the surface saturation current density J0 s . The dependence of Seff and J0 s on surface charge Q, surface dopant concentration Ns , and interface parameters is derived. It is shown that for crystalline silicon at 300 K in low-injection, Seff is independent of Ns only when Q²/Ns   1.5 × 10⁷ cm for accumulation and Q¹˙⁸⁵ /Ns  > 1.5 × 10⁶ cm for inversion. These conditions are commonly satisfied in undiffused wafers but rarely in diffused wafers. We conclude that for undiffused silicon, J0 s is superior to the conventional Seff as a metric for quantifying the surface passivation, whereas for diffused silicon, the merit in using J0 s or Seff (or neither) depends on the sample. Experimental examples are given that illustrate the merits and flaws of J0 s and Seff

Effect of boron concentration on recombination at the p-Si–Al2O3 interface

We examine the surface passivation properties of Al₂O₃ deposited on boron-doped planar crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 × 10¹⁵ to 5.2 × 10¹⁹ cm⁻³. Atmospheric pressure chemical vapor deposition and thermal atomic layer deposition are used to deposit the Al₂O₃ films. The surface recombination rate of each sample is determined from photoconductance measurements together with the measured dopant profiles via numerical simulation, using the latest physical models. These values are compared with calculations based on the interface properties determined from capacitance–voltage and conductance measurements. It is found that the fundamental surface recombination velocity of electrons, Sn 0 , which describes the chemical passivation of the interface, is independent of the surface boron concentration Ns for Ns  ≤ 3 × 10¹⁹ cm⁻³, and in excellent agreement with values calculated from the interface state density Dit and capture coefficients cn and cp measured on undiffused boron-doped surfaces. We conclude that the physical properties of the Si– Al₂O₃ interface are independent of the boron dopant concentration over this range

Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we investigate the influence of rapid thermal annealing (RTA) on the surface passivation of c-Si by Al2O3 deposited by atmospheric pressure chemical vapour deposition (APCVD) as a function of RTA peak temperature between 500 and 900 °C, and for Al2O3 deposition temperatures between 325 and 440 °C. The saturation current density J0 of undiffused p-type surfaces is observed either to increase or decrease following RTA depending on the Al2O3 deposition temperature and the RTA peak temperature. The optimum deposition temperature depends on the post-deposition thermal processing to be applied. Films deposited at lower temperatures provide worse passivation after low temperature heat treatment, but maintain this passivation better at higher RTA temperatures. An exceptionally low J0 of 7 fA cm−2, due to the combination of a very low interface state density Dit and unusually high negative fixed charge density Qf, is achieved by the use of a short 500–550 °C RTA combined with optimised deposition conditions

Comparison of quantitative whole body PET parameters on [68Ga]Ga-PSMA-11 PET/CT using ordered Subset Expectation Maximization (OSEM) vs. bayesian penalized likelihood (BPL) reconstruction algorithms in men with metastatic castration-resistant prostate cancer

Background PSMA PET/CT is a predictive and prognostic biomarker for determining response to [Lu-177]Lu-PSMA-617 in patients with metastatic castration resistant prostate cancer (mCRPC). Thresholds defined to date may not be generalizable to newer image reconstruction algorithms. Bayesian penalized likelihood (BPL) reconstruction algorithm is a novel reconstruction algorithm that may improve contrast whilst preventing introduction of image noise. The aim of this study is to compare the quantitative parameters obtained using BPL and the Ordered Subset Expectation Maximization (OSEM) reconstruction algorithms. Methods Fifty consecutive patients with mCRPC who underwent [Ga-68]Ga-PSMA-11 PET/CT using OSEM reconstruction to assess suitability for [Lu-177]Lu-PSMA-617 therapy were selected. BPL algorithm was then used retrospectively to reconstruct the same PET raw data. Quantitative and volumetric measurements such as tumour standardised uptake value (SUV)max, SUVmean and Molecular Tumour Volume (MTV-PSMA) were calculated on both reconstruction methods. Results were compared (Bland-Altman, Pearson correlation coefficient) including subgroups with low and high-volume disease burdens (MTV-PSMA cut-off 40 mL). Results The SUVmax and SUVmean were higher, and MTV-PSMA was lower in the BPL reconstructed images compared to the OSEM group, with a mean difference of 8.4 (17.5%), 0.7 (8.2%) and - 21.5 mL (-3.4%), respectively. There was a strong correlation between the calculated SUVmax, SUVmean, and MTV-PSMA values in the OSEM and BPL reconstructed images (Pearson r values of 0.98, 0.99, and 1.0, respectively). No patients were reclassified from low to high volume disease or vice versa when switching from OSEM to BPL reconstruction. Conclusions [Ga-68]Ga-PSMA-11 PET/CT quantitative and volumetric parameters produced by BPL and OSEM reconstruction methods are strongly correlated. Differences are proportional and small for SUVmean, which is used as a predictive biomarker. Our study suggests that both reconstruction methods are acceptable without clinical impact on quantitative or volumetric findings. For longitudinal comparison, committing to the same reconstruction method would be preferred to ensure consistency

Evolution of late-stage metastatic melanoma is dominated by aneuploidy and whole genome doubling

Although melanoma is initiated by acquisition of point mutations and limited focal copy number alterations in melanocytes-of-origin, the nature of genetic changes that characterise lethal metastatic disease is poorly understood. Here, we analyze the evolution of human melanoma progressing from early to late disease in 13 patients by sampling their tumours at multiple sites and times. Whole exome and genome sequencing data from 88 tumour samples reveals only limited gain of point mutations generally, with net mutational loss in some metastases. In contrast, melanoma evolution is dominated by whole genome doubling and large-scale aneuploidy, in which widespread loss of heterozygosity sculpts the burden of point mutations, neoantigens and structural variants even in treatment-naïve and primary cutaneous melanomas in some patients. These results imply that dysregulation of genomic integrity is a key driver of selective clonal advantage during melanoma progression

Genetic architecture of subcortical brain structures in 38,851 individuals

Subcortical brain structures are integral to motion, consciousness, emotions and learning. We identified common genetic variation related to the volumes of the nucleus accumbens, amygdala, brainstem, caudate nucleus, globus pallidus, putamen and thalamus, using genome-wide association analyses in almost 40,000 individuals from CHARGE, ENIGMA and UK Biobank. We show that variability in subcortical volumes is heritable, and identify 48 significantly associated loci (40 novel at the time of analysis). Annotation of these loci by utilizing gene expression, methylation and neuropathological data identified 199 genes putatively implicated in neurodevelopment, synaptic signaling, axonal transport, apoptosis, inflammation/infection and susceptibility to neurological disorders. This set of genes is significantly enriched for Drosophila orthologs associated with neurodevelopmental phenotypes, suggesting evolutionarily conserved mechanisms. Our findings uncover novel biology and potential drug targets underlying brain development and disease

Genetic architecture of subcortical brain structures in 38,851 individuals

Subcortical brain structures are integral to motion, consciousness, emotions and learning. We identified common genetic variation related to the volumes of the nucleus accumbens, amygdala, brainstem, caudate nucleus, globus pallidus, putamen and thalamus, using genome-wide association analyses in almost 40,000 individuals from CHARGE, ENIGMA and UK Biobank. We show that variability in subcortical volumes is heritable, and identify 48 significantly associated loci (40 novel at the time of analysis). Annotation of these loci by utilizing gene expression, methylation and neuropathological data identified 199 genes putatively implicated in neurodevelopment, synaptic signaling, axonal transport, apoptosis, inflammation/infection and susceptibility to neurological disorders. This set of genes is significantly enriched for Drosophila orthologs associated with neurodevelopmental phenotypes, suggesting evolutionarily conserved mechanisms. Our findings uncover novel biology and potential drug targets underlying brain development and disease