Development of an RF IV waveform based stress test procedure for use on GaN HFETs

This paper reports on the development of an RF IV waveform based stress test procedure. DC and low-voltage RF characterisation was carried out before and after high power RF stress. RF waveform measurements showed that the exact change in the RF load line induced during RF degradation cannot be directly inferred from the DC or low power RF measurement. The RF degradation takes the form of a knee-walkout, a small pinch-off shift consistent with charge trapping and defect generation, and in addition gate leakage occurs once the RF voltage exceeds a critical voltage

RF IV waveform engineering applied to VSWR sweeps and RF stress testing

This thesis looks at how the Radio Frequency (RF) waveform measurement and engineering techniques developed for Power Amplifier (PA) design can be used to investigate RF reliability. Within this area two major themes are concentrated on – firstly the effect of a load impedance mismatch and secondly an investigation into using the RF IV waveform measurement system for RF stress testing. The initial aim for this work was to investigate the potential for removing the output protection isolator from a PA. It was seen that in doing so there is the potential to cause an impedance mismatch, which results in a portion of the power produced being reflected back. It was shown that the conditions that could be presented to a device as a result of an impedance mismatch can be found by performing a Voltage Standing Wave Ratio (VSWR) sweep. The results of the worst possible case scenario VSWR sweep, when all of the power is reflected back, can be split into three regions. One of high RF drain voltage swings, one of high RF drain currents and a transition region of simultaneously high RF drain currents and voltage swings. Each of these regions presents different operating conditions to the device, and in turn different stresses. The second part of this thesis concentrates on an investigation into Gallium Nitride (GaN) Heterostructure Field Effect Transistor (HFET) reliability, specifically if the RF waveform measurement system can be used to provide detailed information about the state of the device during RF stress testing. A stress testing procedure was developed to allow this, which featured both DC and RF characterisation measurements before and after every stress period. It was shown that the measurements made during the characterisation stages only gives a representation of the degradation seen in the same measurements during the RF stress period

125 - 211 GHz low noise MMIC amplifier design for radio astronomy

To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers

125 - 211 GHz low noise MMIC amplifier design for radio astronomy

To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers

Wideband 67-116 GHz cryogenic receiver development for ALMA Band 2

The Atacama Large Millimeter/sub-millimeter Array (ALMA) is already revolutionising our understanding of the Universe. However, ALMA is not yet equipped with all of its originally planned receiver bands, which will allow it to observe over the full range of frequencies from 35-950 GHz accessible through the Earth's atmosphere. In particular Band 2 (67-90 GHz) has not yet been approved for construction. Recent technological developments in cryogenic monolithic microwave integrated circuit (MMIC) high electron mobility transistor (HEMT) amplifier and orthomode transducer (OMT) design provide an opportunity to extend the originally planned on-sky bandwidth, combining ALMA Bands 2 and 3 into one receiver cartridge covering 67-116 GHz. The IF band definition for the ALMA project took place two decades ago, when 8 GHz of on-sky bandwidth per polarisation channel was an ambitious goal. The new receiver design we present here allows the opportunity to expand ALMA's wideband capabilities, anticipating future upgrades across the entire observatory. Expanding ALMA's instan taneous bandwidth is a high priority, and provides a number of observational advantages, including lower noise in continuum observations, the ability to probe larger portions of an astronomical spectrum for, e.g., widely spaced molecular transitions, and the ability to scan efficiently in frequency space to perform surveys where the redshift or chemical complexity of the object is not known a priori. Wider IF bandwidth also reduces uncertainties in calibration and continuum subtraction that might otherwise compromise science objectives. Here we provide an overview of the component development and overall design for this wideband 67-116 GHz cryogenic receiver cartridge, designed to operate from the Band 2 receiver cartridge slot in the current ALMA front end receiver cryostat

13.6 - 24 GHz LNA Design for Radio Astronomy using a Commercially Available 100 nm GaAs pHEMT Process

This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) design suitable for radio astronomy applications based on a commercially available 100 nm gate length gallium arsenide pseudomorphic high electron mobility transistor process. The MMIC exhibits a simulated noise figure of less than 1.2 dB at room temperature between 13.6 - 24 GHz. When measured on-wafer, the forward transmission is greater than 22 dB across the operational bandwidth, with input and output return losses less than -5.5 and -16 dB, respectively. The total power dissipation is 41 mW. Comparing these results with those of state-of-the-art LNAs in the literature shows that this process should be capable of achieving performance comparable to more specialized technology, allowing radio astronomy to take advantage of the benefits of commercial technology

Wide Bandwidth Considerations for ALMA Band 2

One of the main considerations in the ALMA Development Roadmap for the future of operations beyond 2030 is to at least double its on-sky instantaneous bandwidth capabilities. Thanks to the technological innovations of the past two decades, we can now produce wider bandwidth receivers than were foreseen at the time of the original ALMA specifications. In several cases, the band edges set by technology at that time are also no longer relevant. In this memo, we look into the scientific advantages of beginning with Band 2 when implementing such wideband technologies. The Band 2 receiver system will be the last of the original ALMA bands, completing ALMA's coverage of the atmospheric windows from 35-950 GHz, and is not yet covered by any other ALMA receiver. New receiver designs covering and significantly extending the original ALMA Band 2 frequency range (67-90 GHz) can now implement these technologies. We explore the scientific and operational advantages of a receiver covering the full 67-116 GHz atmospheric window. In addition to technological goals, the ALMA Development Roadmap provide s 3 new key science drivers for ALMA, to probe: 1) the Origins of Galaxies, 2) the Origins of Chemical Complexity, and 3) the Origins of Planets. In this memo, we describe how the wide RF Band 2 system can help achieve these goals, enabling several high-profile science programmes to be executed uniquely or more effectively than with separate systems, requiring an overall much lower array time and achieving more consistent calibration accuracy: contiguous broad-band spectral surveys, measurements of deuterated line ratios, and more generally fractionation studies, improved continuum measurements (also necessary for reliable line flux measurements), simultaneous broad-band observations of transient phenomena, and improved bandwidth for 3 mm very long baseline interferometry (VLBI)

RF waveform investigation of VSWR sweeps on GaN HFETs

Solid state amplifiers are often fitted with an isolator component on the output to protect them from impedance mismatch. GaN based HFET’s could offer the potential to remove the isolator due to their high breakdown voltages and high channel temperature operation. However the absence of an isolator would mean that the transistor would have to be able to withstand any load impedance that could be presented to it. The usual method to test for impedance mismatch is to select a fixed VSWR ratio and then sweep the load phase through 360°. In this paper a range of VSWR sweeps are investigated. The measurements are performed in a system that provides the RF voltage and current waveforms, as a consequence novel impedance contour plots can be generated. These plots can then aid in identifying potential failure mechanisms and load conditions to avoid