Objective assessment of walking impairments in myotonic dystrophy by means of a wearable technology and a novel severity index

Myotonic dystrophy type 1 (DM1) is a genetic inherited autosomal dominant disease characterized by multisystem involvement, including muscle, heart, brain, eye, and endocrine system. Although several methods are available to evaluate muscle strength, endurance, and dexterity, there are no validated outcome measures aimed at objectively evaluating qualitative and quantitative gait alterations. Advantageously, wearable sensing technology has been successfully adopted in objectifying the assessment of motor disabilities in different medical occurrences, so that here we consider the adoption of such technology specifically for DM1. In particular, we measured motor tasks through inertial measurement units on a cohort of 13 DM1 patients and 11 healthy control counterparts. The motor tasks consisted of 16 meters of walking both at a comfortable speed and fast pace. Measured data consisted of plantar-flexion and dorsi-flexion angles assumed by both ankles, so to objectively evidence the footdrop behavior of the DM1 disease, and to define a novel severity index, termed SI-Norm2, to rate the grade of walking impairments. According to the obtained results, our approach could be useful for a more precise stratification of DM1 patients, providing a new tool for a personalized rehabilitation approach

Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon

This work proposes a microwave-based synthetic route for the preparation of tin nanospheres with a diamond-like a-phase structure on silicon. The main characteristics of the synthesized material are an extraordinarily narrow (around 50 meV) direct bandgap and an improved thermal stability (up to 200° C). Structural and compositional characterizations showed a core–shell structure comprised of an outer amorphous oxide shell and inner core containing a-phase tin domains. Microwaves turned out to be instrumental in achieving the specific nanostructures reported, due to their peculiar heating characteristics. Low pressure, low temperature and compatibility with integrated circuits manufacturing represent the most innovative features of the present synthetic process

I Say “no”. You Say “it Isn't”. About a New Understanding of the Concept of Negation

Introduction: In our opinion there is still confusion about the exact meaning of the term negation. As a consequence of this the importance of negation in the psychotherapeutic work is until now underestimated. Objectives For psychiatrists who work according to Fagioli's human birth theory the concept of negation is fundamental. Negation is a notion that refers to unconscious reality. Aims: The task of the psychiatrist is to identify and to interpret the negation in the deformed dream images during the psychotherapeutic process. Methods: In contrast to an intentional lie, which is communicated through verbal speech, negation corresponds to unconscious thoughts, which we can find in dreams. During sleep a transformation occurs, language is altered and expressed through images. Negation deforms the image. This deformation of the image happens in an unconscious process. This negation distorts the reality of the patient and his ability to interact with the other. Corresponding the relationship will be aggressive/destructive. The only way to identify this deformation is dream interpretation. Results: Through this therapeutic process the patient will be able to intuit and realize instead of negate the positive qualities of the other and integrate these into his reality. Only human interaction that is free from negation enable the patient to overcome the ideo-affective splitting, which allows recovery of positive affects and the possibility of developing evolutive relationships. Conclusions: Only a clarification of the term negation allows a psychotherapeutic process with the aim of developing evolutive relationships

iCollections – Digitising the British and Irish Butterflies in the Natural History Museum, London

This is an open access article distributed under the terms of the Creative Commons Attribution License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited. The attached file is the published version of the article.NHM Repositor

Influence of common source and word line electrodes on program operation in superflash memory

A theoretical study of the influence of word line and common source electrodes on the program operation in shrank SuperFlash memory is proposed. Numerical simulations demonstrate that the literature model defined for previous nodes is not always suitable, due to the continuous cell physical size reduction and to the consequent increment of capacitive coupling between the floating gate and adjacent electrodes. To get a deeper insight, an analytical model of the electric field in the region of source side injection is proposed. This model describes the impact of the cell physical and electrical parameters on the vertical and horizontal field components and highlights the strong dependence of the carrier injection on the technology node. Furthermore, the numerical and analytical models estimate the influence of the word line and common source electrodes on the time‐toprogram, the floating gate potential and the source side injection efficiency, taking into consideration, at the same time, their possible impact on the cell reliability

Thin-Film Photodetectors for the Ultraviolet and Vacuum Ultraviolet Spectral Range

In this paper we report about thin film photodetectors optimized for the detection of the vacuum ultraviolet. The devi'ces are based on hydrogenated amorphous silicon and silicon carbide p-i -n heterostruclUres on glass substrate. At room temperature the photodetectors exhibit values of quantum efficiency of 52 % at 1..=58.4 nm, I % at 1..=400 nm, and 0.1 % at 1..=650 nm. The time response at ultraviolet pulses from an N2 laser gives signals with 6 Ils full wid£h half maximum and 500 ns rise time. Stability of the device is presently affected by light activation of boron dopant occurs in the p-Iayer under U V illumination and ihas been investigated by a simple equivalent circuit of the structure. The effect can be minimized by optimization on the electrode geometry. The devices are suitable for integration in low-cost, large-area arrays

Large-scale CMOS-compatible process for silicon nanowires growth and BC8 phase formation

A novel, low temperature process for the formation of Si-BC8 phase is obtained while growing Silicon nanowires. The nanowires growth is performed in a CVD reactor under exposure of the substrate to microwaves, employing Sn nanospheres as catalyst and a flux of SiH4 as precursor, respectively. Microwaves allow for selective heating of the metal catalyst while keeping the substrate at low temperature. At the end of the process, silicon nanowires with the metal sphere on top are obtained, together with the (unexpected) transition of a portion of silicon substrate from the diamond to the Si-BC8 crystallographic phase. Silicon atoms in Si-BC8 phase are arranged in body-centered-cubic unit cells resulting into a different energy-wavevector diagram compared to the silicon diamond cubic phase. Indeed, Si-BC8 possesses a direct band gap as low as 30 meV at room temperature. These features may be employed in a large variety of applications, requiring CMOS-compatible manufacturing. Systematic structural analysis and a phenomenological model for Si-BC8 phase formation are discussed