Electrical heating tests of uranium dioxide external fuel configuration at emitter temperature of 1900 K

Testing of two fuel clad specimens for thermionic reactor application is described. The annular UO2 fuel was clad on both sides with tungsten; heat rejection was radially inward. The tests were intended to study inner clad stability, fuel redistribution, and fuel melting problems. The specimens were tested in a vacuum chamber using electron bombardment heating. Fuel structural changes were studied using periodic gammagraphs and posttest metallography. The first specimen test was terminated at 50 hours because of a braze failure. The second specimen was tested for 240 hours when an outer clad leak developed due to a tungsten-water reaction. The fuel developed numerous cracks on cooldown but the inner clad remained dimensionally stable. The fuel cover gas did not impede the rate of fuel redistribution. Posttest examination showed the fuel had not melted during operation

Chargino Production and Decay in Photon-Photon-Collisions

We discuss the pair production of charginos in collisions of polarized photons $\gamma\gamma \to \tilde{\chi}_i^+ \tilde{\chi}_i^-$, ($i=1,2$) and the subsequent leptonic decay of the lighter chargino $\tilde{\chi}_1^+ \to \tilde{\chi}_1^0 e^+ \nu_e$ including the complete spin correlations. Analytical formulae are given for the polarization and the spin-spin correlations of the charginos. Since the production is a pure QED process the decay dynamics can be studied separately. For high energy photons from Compton backscattering of polarized laser pulses off polarized electron beams numerical results are presented for the cross section, the angular distribution and the forward-backward asymmetry of the decay positron. Finally we study the dependence on the gaugino mass parameter $M_1$ and on the sneutrino mass for a gaugino-like MSSM scenario.Comment: 22 pages, 15 figures, version to be published in Eur. Phys. J.

Determination of the Gaugino Mass Parameter M_1 in Different Linear Collider Modes

We study the different linear collider modes with regard to the determination of the gaugino mass parameter M_1. In a specific mSUGRA inspired scenario we compare four processes with polarized beams: (a) e+ e- --> neutralino_1 neutralino_2 --> neutralino_1 neutralino_1 e+ e-, (b) e- gamma --> neutralino_1 selectron_{L/R} --> neutralino_1 neutralino_1 e-, (c) gamma gamma --> chargino_1^+ chargino_1^- --> neutralino_1 neutralino_1 e+ e- neutrino_e anti-neutrino_e, (d) e- e- --> selectron_{L/R} selectron_{L/R} --> neutralino_1 neutralino_1 e- e-.Comment: 5 pages, 8 figures, LaTex, Talk given at the 5th International Linear Collider Workshop (LCWS 2000), Fermilab, Batavia, Illinois, Oct. 24-28, 200

Microstrip resonator for microwaves with controllable polarization

In this work the authors implemented a resonator based upon microstrip cavities that permits the generation of microwaves with arbitrary polarization. Design, simulation, and implementation of the resonators were performed using standard printed circuit boards. The electric field distribution was mapped using a scanning probe cavity perturbation technique. Electron spin resonance using a standard marker was carried out in order to verify the polarization control from linear to circular.Comment: 3 pages, 3 figures, submitted to Appl. Phys. Let

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results