Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettability

The atomic layer deposition (ALD) of yttrium oxide (Y2O3) is investigated using the liquid precursor Y(EtCp)2(iPr-amd) as the yttrium source with thermal (H2O) and plasma-enhanced (H2O plasma and O2 plasma) processes, respectively. Saturation is confirmed for the growth of the Y2O3 films with each investigated reactant with a similar ALD window from 150 to 300 °C, albeit with a different growth rate. All of the as-deposited Y2O3 films are pure and smooth and have a polycrystalline cubic structure. The as-deposited Y2O3 films are hydrophobic with water contact angles >90°. The water contact angle gradually increased and the surface free energy gradually decreased as the film thickness increased, reaching a saturated value at a Y2O3 film thickness of ∼20 nm. The hydrophobicity was retained during post-ALD annealed at 500 °C in static air for 2 h. Exposure to polar and nonpolar solvents influences the Y2O3 water contact angle. The reported ALD process for Y2O3 films may find potential applications in the field of hydrophobic coatings

Atomic layer deposition of vanadium oxides for thin-film lithium-ion battery applications

Amorphous VO2 thin films are deposited by atomic layer deposition (ALD) using tetrakis[ethylmethylamino] vanadium (TEMAV) as vanadium precursor and water or ozone as the oxygen source. The crystallisation and oxidation behaviour is investigated for different oxygen partial pressures between ambient air and 3.7 Pa, resulting in phase formation diagrams on SiO2, TiN and Pt substrates, demonstrating a series of stable vanadium oxide phases in the VO2-V2O5 series. Most of the obtained phases exhibit lithium intercalation behaviour in the 1.5-4.5 V vs. Li+/Li potential range, and demonstrate high volumetric capacities in the order of V2O5 < VO2 (B) < V6O13 < V3O7 < V4O9, with the latter at more than twice the capacity of the best commercial cathode materials