Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe₂ Single Crystals

We report an electric field tuning of the thermopower in ultrathin WSe₂ single crystals over a wide range of carrier concentration by using electric double-layer (EDL) technique. We succeeded in the optimization of power factor not only in the hole but also in the electron side, which has never been chemically accessed. The maximized values of power factor are one-order larger than that obtained by changing chemical composition, reflecting the clean nature of electrostatic doping