Quantum wells with atomically smooth interfaces

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic roughness. Micro-photoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of $\mu$m in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.Comment: 4 pages, 3 figures, revTex

One-dimensional continuum and exciton states in quantum wires

High-quality T-shaped quantum wires are fabricated by cleaved-edge overgrowth with the molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal. Characterization by micro-photoluminescence (PL) and PL excitation (PLE) spectroscopy at 5 K reveals high uniformity, a sharp spectral width, and a small Stokes shift of one-dimensional (1-D) excitons. The PLE spectrum for 1-D states shows a large peak of ground-state excitons and a small absorption band ascribed to 1-D continuum states with an onset at 11 meV above the exciton peak.Comment: 4 pages, 4 figures, RevTe

Lasing from a single quantum wire

A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al_{0.07}Ga_{0.93}As quantum well and a 6 nm GaAs quantum well, and is embedded in a 1-D single-mode optical waveguide. We observe single-mode lasing from the quantum wire ground state by optical pumping. The laser operates from 5 to 60 K, and has a low threshold pumping power of 5 mW at 5 K.Comment: 4 pages including 4 figure

Observation of large many-body Coulomb interaction effects in a doped quantum wire

We demonstrate strong one dimensional (1-D) many-body interaction effects in photoluminescence (PL) in a GaAs single quantum wire of unprecedented optical quality, where 1-D electron plasma densities are controlled via electrical gating. We observed PL of 1-D charged excitons with large binding energy of 2.3 meV relative to the neutral excitons, and its evolution to a Fermi-edge singularity at high electron density. Furthermore, we find a strong band-gap renormalization in the 1-D wire, or a large red-shift of PL with increased electron plasma density. Such a large PL red-shift is not observed when we create a high density neutral electron-hole plasma in the same wire, due probably to cancellation of the Coulomb interaction energy in the neutral plasma.Comment: 5 pages, 4 figures, RevTeX, to be published in Solid State Communication

Strong photo-absorption by a single quantum wire in waveguide-transmission spectroscopy

We measured the absorption spectrum of a single T-shaped, 14x6 nm lateral-sized quantum wire embedded in an optical waveguide using waveguide-transmission spectroscopy at 5 K. In spite of its small volume, the one-dimensional-exciton ground state shows a large absorption coefficient of 80 /cm, or a 98 % absorption probability for a single pass of the 500-um-long waveguide.Comment: 4 pages, 3 figure

Room-temperature excitonic absorption in quantum wires

We measured absorption spectra of T-shaped quantum wires at room temperature using waveguide-transmission spectroscopy. Strong and narrow room-temperature one-dimensional-exciton absorption peak was observed, which shows peak modal absorption coefficient of 160 cm$^{-1}$ per 20 wires with $\Gamma$-factor of $4.3\times10^{-3}$, width of 7.2 meV, and strong polarization anisotropy.Comment: 3pages, 3figure, 1tabl

Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities

We calculate the intersubband absorption linewidth in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening that corresponds to the transport relaxation time related to electron mobility. Numerical calculations for GaAs QWs clarify the different contributions of each individual scattering mechanism to absorption linewidth and transport broadening. Interface roughness scattering contributes about an order of magnitude more to linewidth than to transport broadening, because the contribution from the intrasubband scattering in the first excited subband is much larger than that in the ground subband. On the other hand, LO phonon scattering (at room temperature) and ionized impurity scattering contribute much less to linewidth than to transport broadening. LA phonon scattering makes comparable contributions to linewidth and transport broadening, and so does alloy disorder scattering. The combination of these contributions with significantly different characteristics makes the absolute values of linewidth and transport broadening very different, and leads to the apparent lack of correlation between them when a parameter, such as temperature or alloy composition, is changed. Our numerical calculations can quantitatively explain the previously reported experimental results.Comment: 17 pages, including 15 figure

Imaging of emission patterns in a T-shaped quantum wire laser

Spatially and spectrally resolved microscopic images of spontaneous and stimulated emissions are imaged at the mirror facets of a GaAs T-shaped quantum wire laser with high uniformity. Laser emission from the one-dimensional ground state reveals a circular image located at the core of a T-shaped optical waveguide but significantly smaller in area than the low power spontaneous emission from the same waveguide. These images unambiguously allow assignment of all spontaneous and laser emissions to the wire ground state and respective intersecting wells in the structure.Comment: 4 pages, 3 figure