1,074 research outputs found

    Single nanowire solar cells beyond the Shockley-Queisser limit

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    Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At one sun illumination a short circuit current of 180 mA/cm^2 is obtained, which is more than one order of magnitude higher than what would be predicted from Lambert-Beer law. The enhanced light absorption is shown to be due to a light concentrating property of the standing nanowire as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under one sun illumination.Comment: 19 pages, 3 figure

    Chaos in Axially Symmetric Potentials with Octupole Deformation

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    Classical and quantum mechanical results are reported for the single particle motion in a harmonic oscillator potential which is characterized by a quadrupole deformation and an additional octupole deformation. The chaotic character of the motion is srongly dependent on the quadrupole deformation in that for a prolate deformation virtually no chaos is discernible while for the oblate case the motion shows strong chaos when the octupole term is turned on.Comment: 6 pages LaTex plus 4 figures available by contacting the authors directly, published in PHYS.REV.LETT. 72(1994) 235

    Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

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    The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires.Comment: 4 pages, 4 figure

    Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires

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    Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and extract the main parameters of the emitters. Our results indicate that the quantum dots can host neutral as well as charges excitonic complexes and that the excitons exhibit a slightly elongated footprint, with the main axis tilted with respect to the growth axis. GaAs-AlGaAs emitters in a nanowire are particularly promising for overcoming the limitations set by strain in other systems, with the benefit of being integrated in a versatile photonic structure

    Determination of the bandgap and split-off band of wurtzite GaAs

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    GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of GaAs wurtzite below 1.523 eV

    Fundamental limits in the external quantum efficiency of single nanowire solar cells

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    The fundamental limits for the measurement of the efficiency of single nanowire solar cell devices are presented. We evaluate the effect of the substrate, light polarization, and existence of Mie resonances in the absorption of the solar spectrum for nanowires with diameters from 10 to 300 nm. We find that the efficiency measured under such configuration can be underestimated between a factor 1.6 and 7.0 for GaAs nanowires and between 6.7 and 15.9 for silicon nanowires. These results constitute a reference for understanding the limits in the measurement of single nanowire devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3672168
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