Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation

Remote and not in-flux gamma irradiation effects have been examined on the cumulative dose ranges from 250 Gy to 1 kGy by current-voltage (I-V) and capacitance-voltage (C-V) characteristics for Ni/n-GaN Schottky barrier diodes (SBDs). The interface and charge transport properties of Ni/n-GaN SBDs are significantly changed after gamma irradiation. In addition, the reverse current conduction mechanism indicates that the emission of Poole-Frenkel is dominant in lower voltages and Schottky emission for different doses at the higher voltage. The electrical parameters, such as barrier height and series resistance, decreases significantly at 500 Gy. Due to the internal irradiation of Compton electrons caused by primary gamma photons, low-dose gamma irradiation reveals the enhancement of device characteristics. Nonetheless, for higher doses of gamma irradiation above 500 Gy, degradation of Ni/n-GaN characteristics was observed

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C2+ and 650 keV N2+ ions in the fluence range of 1 x 10(13) to 1 x 10(15) ions cm(-2). The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 x 10(13) ions cm(-2) and thereafter increases with an increase in fluence of 600 keV C2+ and 650 keV N2+ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C2+ ion irradiation is more when compared to N2+ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C2+ ion as compared to N2+ ion