Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering

A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific contact resistivity is reduced from 1372 {\Omega}m for a device with surface contacts to 456 {\Omega}m when contacts are patterned with holes. Electrostatic doping of the graphene further reduces contact resistivity from 519 {\Omega}m to 45 {\Omega}m, a substantial decrease of 91%. The experimental results are supported and understood via a multi-scale numerical model, based on density-functional-theory calculations and transport simulations. The data is analyzed with regards to the edge perimeter and hole-to-graphene ratio, which provides insights into optimized contact geometries. The current work thus indicates a reliable and reproducible approach for fabricating low resistance contacts in graphene devices. We provide a simple guideline for contact design that can be exploited to guide graphene and 2D material contact engineering.Comment: 26 page

Simulation of contact resistance in patterned graphene

While trying to exploit graphene in Radio Frequency applications, the reduction of the contact resistance (Rc) is probably one of the most challenging technological issues to be solved. Graphene patterning under the metal has been demonstrated to be a promising solution, leading to a reduction of Rc by up to a factor of 20, probably due to an increased conductivity at the borders of the patterns of graphene. This technology is still at the early stage and a complete understanding of the physical mechanisms at play is lacking. To this purpose we propose a multi- scale approach based on first-principle calculations, and the solution of the continuity equation to compute Rc in the considered patterned contacts

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.Comment: 7 pages, 6 figure

CVD Graphene Contacts for Lateral Heterostructure MoS2{_2} Field Effect Transistors

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k{\Omega}{\mu}m and high on/off current ratios of 10${^8}. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.Comment: 23 page

Practical and accurate calculations of Askaryan radiation

An in-depth characterization of coherent radio Cherenkov pulses from particle showers in dense dielectric media, referred to as the Askaryan effect, is presented. The time-domain calculation developed in this article is based on a form factor to account for the lateral dimensions of the shower. It is computationally efficient and able to reproduce the results of detailed particle shower simulations with high fidelity in most regions of practical interest including Fresnel effects due to the longitudinal development of the shower. In addition, an intuitive interpretation of the characteristics of the Askaryan pulse is provided. We expect our approach to benefit the analysis of radio pulses in experiments exploiting the radio technique.Comment: Replaced with version published Phys. Rev.

Measurement of the cosmic ray spectrum above 4×10184{\times}10^{18} eV using inclined events detected with the Pierre Auger Observatory

A measurement of the cosmic-ray spectrum for energies exceeding $4{\times}10^{18}$ eV is presented, which is based on the analysis of showers with zenith angles greater than $60^{\circ}$ detected with the Pierre Auger Observatory between 1 January 2004 and 31 December 2013. The measured spectrum confirms a flux suppression at the highest energies. Above $5.3{\times}10^{18}$ eV, the "ankle", the flux can be described by a power law $E^{-\gamma}$ with index $\gamma=2.70 \pm 0.02 \,\text{(stat)} \pm 0.1\,\text{(sys)}$ followed by a smooth suppression region. For the energy ($E_\text{s}$) at which the spectral flux has fallen to one-half of its extrapolated value in the absence of suppression, we find $E_\text{s}=(5.12\pm0.25\,\text{(stat)}^{+1.0}_{-1.2}\,\text{(sys)}){\times}10^{19}$ eV.Comment: Replaced with published version. Added journal reference and DO