Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]

The authors regret that the name of the author “M. Bahadoran” is miss-spelled as M. Bahadorian and Mahdi Bahadoran has asked for spelling of his last name to be corrected in this paper. The published name “M. Bahadorian” is corrected to “M. Bahadoran”

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss's law and solving Poisson's equation. We include the effect of quantum capacitance and GNR's intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs