10 research outputs found

    Observation of ferromagnetism in PdCo alloy nanoparticles encapsulated in carbon nanotubes

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    INCT - INSTITUTO NACIONAL DE CIÊNCIA E TECNOLOGIA METROLOGIA DE RADIAÇÃO EM MEDICINACNPQ – CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP – FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFAPEMIG - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE MINAS GERAISLNLS - LABORATÓRIO NACIONAL DE LUZ SÍNCROTRONCarbon nanotubes terminated by PdCo catalyst nanoparticles were grown by plasma-enhanced chemical vapor deposition. Transmission electron microscopy reveals that these nanoparticles have a droplike shape and are completely encapsulated inside multiwalled nanotubes. Magnetization measurements showed the existence of a permanent magnetization with a small shape anisotropy effect. The magnetization of both cobalt and palladium was confirmed by x-ray magnetic circular dichroism. These results show that nanotubes ended by magnetic PdCo nanoparticles can be grown and could be used in magnetic storage media and electrical spin injection.9625INCT - INSTITUTO NACIONAL DE CIÊNCIA E TECNOLOGIA METROLOGIA DE RADIAÇÃO EM MEDICINACNPQ – CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP – FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFAPEMIG - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE MINAS GERAISLNLS - LABORATÓRIO NACIONAL DE LUZ SÍNCROTRONINCT - INSTITUTO NACIONAL DE CIÊNCIA E TECNOLOGIA METROLOGIA DE RADIAÇÃO EM MEDICINACNPQ – CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP – FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFAPEMIG - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE MINAS GERAISLNLS - LABORATÓRIO NACIONAL DE LUZ SÍNCROTRO

    Oxygen intercalated graphene on SiC(0001) : Multiphase SiOx layer formation and its influence on graphene electronic properties

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    Low-dimensionality materials are highly susceptible to interfaces. Indeed, intercalation of different chemical species in between epitaxial graphene and silicon carbide (SiC), for instance, may decouple the graphene with respect to the substrate due to the conversion of the buffer layer into a graphene layer. O-intercalation is known to release the strain of such 2D material and to lead to the formation of high structural quality AB-stacked bilayer graphene. Nonetheless, this interface transformation concomitantly degrades graphene electronic transport properties. In this work we employed different techniques in order to better understand the structure of the graphene/SiC interface generated by O-intercalation and to elucidate the origin of the poor electronic properties of graphene. Experimental results revealed the formation of a SiO2 rich layer with a defective transition layer in between it and the SiC, which is characterized by the existence of silicon oxycarbide structures. Scanning tunneling spectroscopy measurements revealed an extensive presence of electronic states just around the Fermi level all over the sample surface, which may suppress the charge carriers mobility around this region. According to theoretical calculations, such states are mainly due to the formation of silicon oxicarbides within the interfacial layer

    Near-edge X-ray absorption spectroscopy signature of image potential states in multilayer epitaxial graphene.

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    Single layer behavior in multilayer epitaxial graphene has been a matter of intense investigation. This is due to the layer decoupling that occurs during growth of graphene on some types of substrates, such as carbonterminated silicon carbide. We show here that near-edge X-ray absorption spectroscopy can be used to observe the signature of this decoupling. To this end, samples of multilayer graphene from silicon carbide sublimation were grownwith different degrees of decoupling. Raman spectroscopy was used to infer the degree of structural decoupling. X-ray grazing-incidence diffraction and scanning tunneling microscopy showed that growth initiates with the presence of bilayer graphene commensurate structures, while layer decoupling is associated to the formation of incommensurate structures observed for longer sublimation time. Near-edge X-ray absorption spectroscopywas used to probe the electronic states above the Fermi energy. Besides the σ* and π* empty states, image potential states are observed and show a clear change of intensity as a function of incident angle. These image potential states evolve from a graphite- to graphene-like behavior as a function of growth time and can be used to infer the degree of structural coupling among layers

    Structural and optical properties of InP quantum dots grown on GaAs(001)

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    We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and photoluminescence techniques. The InP dots present an efficient optical emission even when they are uncapped, which is attributed to the low surface recombination velocity in InP. We compare the difference in the optical properties between surface free dots, which are not covered by any material, with dots covered by a GaAs capping layer. We observed a bimodal dispersion of the dot size distribution, giving rise to two distinct emission bands. The results also revealed that the strain accumulated in the InP islands is slightly relieved for samples with large InP amounts. An unexpected result is the relatively large blue shift of the emission band from uncapped samples as compared to capped dots

    Structural and optical properties of InP quantum dots grown on GaAs(001)

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    We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and photoluminescence techniques. The InP dots present an efficient optical emission even when they are uncapped, which is attributed to the low surface recombination velocity in InP. We compare the difference in the optical properties between surface free dots, which are not covered by any material, with dots covered by a GaAs capping layer. We observed a bimodal dispersion of the dot size distribution, giving rise to two distinct emission bands. The results also revealed that the strain accumulated in the InP islands is slightly relieved for samples with large InP amounts. An unexpected result is the relatively large blue shift of the emission band from uncapped samples as compared to capped dots
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