Graphene-based light sensing: fabrication, characterisation, physical properties and performance

This is the final version. Available from MDPI via the DOI in this record.Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl3 is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of detectors with high gain and responsivity. In this work we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse in these materials, their performance and possible future paths of investigation.Funding: M.F.C. and S.R. acknowledge financial support from: Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom, projects EP/M002438/1, EP/M001024/1, EPK017160/1, EP/K031538/1, EP/J000396/1; the Royal Society, grant title "Room temperature quantum technologies" and "Wearable graphene photovolotaic"; Newton fund, Uk-Brazil exchange grant title "Chronographene" and the Leverhulme Trust, research grants "Quantum drums" and "Quantum revolution". J.D.M. acknowledges financial support from the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom, via the EPSRC Centre for Doctoral Training in Metamaterials, Grant No. EP/L015331/1

Tuning the transport gap of functionalized graphene via electron beam irradiation

We demonstrate a novel method to tune the energy gap epsilon1 between the localized states and the mobility edge of the valence band in chemically functionalized graphene by changing the coverage of fluorine adatoms via electron-beam irradiation. From the temperature dependence of the electrical transport properties we show that epsilon1 in partially fluorinated graphene CF0.28 decreases upon electron irradiation up to a dose of 0.08 C cm−2. For low irradiation doses (0.2 C cm−2) the electrical conduction takes place via Mott variable range hopping.SR and MFC acknowledge financial support from EPSRC (grant numbers EP/G036101/1, EP/J000396/1, EP/K017160/1 and EP/K010050/1). SR acknowledges financial support from the Royal Society Research grant number 2010/R2 (grant number SH-05052)

Fabrication of wearable triboelectric nanogenerators

PosterEngineering and Physical Sciences Research Council (EPSRC

Smart Textile: Exploration of Wireless Sensing Capabilities

This is the author accepted manuscript. The final version is available from IEEE via the DOI in this recordE-textile is a developing technology joining the advantages of material science and information and communication technologies. In this work, we present the development and assessment of smart textile system containing sensing, processing and wireless communication capabilities. We demonstrate a wearable temperature sensing system based on resistance temperature detection approach utilizing graphene technology, which allows high flexibility and robustness of the electronic textile. The developed sensing system demonstrates experimental sensitivity as high as 80Ω/°C within the temperature detection range from 24 °C to 35 °C, which is the highest reported to date for wearable temperature sensors. In terms of wireless communication, the system operates at 2.4 GHz supporting Bluetooth low energy technology and securely transmits the measured data for up to 10 m which is proved by received signal strength and link quality indicators

A simple process for the fabrication of large-area CVD graphene based devices via selective in situ functionalization and patterning

This is the author accepted manuscript. The final version is available from the publisher via the DOI in this record.We report a novel approach for the fabrication of micro- and nano-scale graphene devices via the in-situ plasma functionalization and in-situ lithographic patterning of large-area graphene directly on CVD catalytic metal (Cu) substrates. This enables us to create graphene-based devices in their entirety prior to any transfer processes, simplifying very significantly the device fabrication process and potentially opening up the route to the use of a wider range of target substrates. We demonstrate the capabilities of our technique via the fabrication of a flexible, transparent, graphene/graphene oxide humidity sensor that outperforms a conventional commercial sensor.This work was carried out under the auspices of the EU FP7 project CareRAMM. This project received funding from the European Union Seventh Framework Programme (FP7/2007-2013) under grant agreement no 309980. The authors are grateful for helpful discussions with all CareRAMM partners, particularly Prof A. Ferrari and Ms A. Ott at the University of Cambridge, and Dr A. Sebastian and Dr W. Koelmans at IBM Research Zurich. We also gratefully acknowledge the assistance of the National EPSRC XPS User’s Service (NEXUS) at Newcastle University, UK (an EPSRC Mid-Range Facility) in carrying out the XPS measurements and the assistance of Prof S. Russo at the University of Exeter in carrying out humidity sensing measurements. A.M.A. would also like to thank Dr E. Alexeev for useful ideas for this Letter and pleasurable discussions of the result

An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

This is the author accepted manuscript. The final version is available from AIP Publishing via the DOI in this record.Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, new features in consumer electronics, safety devices and medical equipment. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, Raman, absorption and PL spectroscopy in one single set-up with full control over the polarization and wavelength of light. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs) and Si. The performance and resolution is equivalent to commercially available instruments with the significant added value of being a compact, multi-purpose unit. Our design offers a versatile solution to face the challenges imposed by the advent of atomically-thin materials in optoelectronic devices

Homogeneously Bright, Flexible, and Foldable Lighting Devices with Functionalized Graphene Electrodes.

Alternating current electroluminescent technology allows the fabrication of large area, flat and flexible lights. Presently the maximum size of a continuous panel is limited by the high resistivity of available transparent electrode materials causing a visible gradient of brightness. Here, we demonstrate that the use of the best known transparent conductor FeCl3-intercalated few-layer graphene boosts the brightness of electroluminescent devices by 49% compared to pristine graphene. Intensity gradients observed for high aspect ratio devices are undetectable when using these highly conductive electrodes. Flat lights on polymer substrates are found to be resilient to repeated and flexural strains.S. Russo and M.F. Craciun acknoweldge financial support from EPSRC (Grant no. EP/J000396/1, EP/K017160/1, EP/K010050/1, EPG036101/1, EP/M001024/1, EPM002438/1) and from the Leverhulme Trust (Research grant title Quantum Drums)

Unforeseen high temperature and humidity stability of FeCl3 intercalated few layer graphene

This is the final version of the article. Available from the publisher via the DOI in this record.We present the first systematic study of the stability of the structure and electrical properties of FeCl3 intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforseen stability of this transparent conductor to a relative humidity up to 100% at room temperature for 25 days, to a temperature up to 150°C in atmosphere and to a temperature as high as 620°C in vacuum, that is more than twice higher than the temperature at which the intercalation is conducted. The stability of FeCl3 intercalated few-layer graphene together with its unique values of low square resistance and high optical transparency, makes this material an attractive transparent conductor in future flexible electronic applications

Strain-engineering of twist-angle in graphene/hBN superlattice devices

This is the author accepted manuscript. The final version is available on open access from American Chemical Society via the DOI in this recordThe observation of novel physical phenomena such as Hofstadter’s butterfly, topological currents, and unconventional superconductivity in graphene has been enabled by the replacement of SiO2 with hexagonal boron nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design, and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work, we probe the strain configuration of graphene on hBN in contact with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modeling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping while increasing the overall strain, indicating an increased interaction between graphene and hBN. Surprisingly, we find that the two contact configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.Engineering and Physical Sciences Research Council (EPSRC)Royal SocietyNewton FundLeverhulme TrustHigher Committee for Education Development in Iraq (HCED)Royal Academy of Engineerin

Humidity‐Controlled Ultralow Power Layer‐by‐Layer Thinning, Nanopatterning and Bandgap Engineering of MoTe2

This is the final version. Available on open access from Wiley via the DOI in this recordA highly effective laser thinning method is demonstrated to accurately control the thickness of MoTe2 layers. By utilizing the humidity present in the ambient atmosphere, multilayered MoTe2 films can be uniformly thinned all the way down to monolayer with layer-by-layer precision using an ultralow laser power density of 0.2 mW µm−2. Localized bandgap engineering is also performed in MoTe2, by creating regions with different bandgaps on the same film, enabling the formation of lateral homojunctions with sub-200 nm spatial resolution. Field-effect transistors fabricated from these thinned layers exhibit significantly improved electrical properties with an order of magnitude increase in on/off current ratios, along with enhancements in on-current and field-effect mobility values. Thinned devices also exhibit the fastest photoresponse (45 µs) for an MoTe2-based visible photodetector reported to date, along with a high photoresponsivity. A highly sensitive monolayer MoTe2 photodetector is also reported. These results demonstrate the efficiency of the presented thinning approach in producing high-quality MoTe2 films for electronic and optoelectronic applications.Office of Naval Research GlobalEngineering and Physical Sciences Research Council (EPSRC)Defence Science and Technology Laborator