Nonlinear c-axis transport in Bi_2Sr_2CaCu_2O_(8+d) from two-barrier tunneling

Motivated by the peculiar features observed through intrinsic tunneling spectroscopy of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ mesas in the normal state, we have extended the normal state two-barrier model for the c-axis transport [M. Giura et al., Phys. Rev. B {\bf 68}, 134505 (2003)] to the analysis of $dI/dV$ curves. We have found that the purely normal-state model reproduces all the following experimental features: (a) the parabolic $V$-dependence of $dI/dV$ in the high-$T$ region (above the conventional pseudogap temperature), (b) the emergence and the nearly voltage-independent position of the "humps" from this parabolic behavior lowering the temperature, and (c) the crossing of the absolute $dI/dV$ curves at a characteristic voltage $V^\times$. Our findings indicate that conventional tunneling can be at the origin of most of the uncommon features of the c axis transport in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$. We have compared our calculations to experimental data taken in severely underdoped and slightly underdoped Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ small mesas. We have found good agreement between the data and the calculations, without any shift of the calculated dI/dV on the vertical scale. In particular, in the normal state (above $T^\ast$) simple tunneling reproduces the experimental dI/dV quantitatively. Below $T^\ast$ quantitative discrepancies are limited to a simple rescaling of the voltage in the theoretical curves by a factor $\sim$2. The need for such modifications remains an open question, that might be connected to a change of the charge of a fraction of the carriers across the pseudogap opening.Comment: 7 pages, 5 figure

Finite temperature transport at the superconductor-insulator transition in disordered systems

I argue that the incoherent, zero-frequency limit of the universal crossover function in the temperature-dependent conductivity at the superconductor-insulator transition in disordered systems may be understood as an analytic function of dimensionality of system d, with a simple pole at d=1. Combining the exact result for the crossover function in d=1 with the recursion relations in d=1+\epsilon, the leading term in the Laurent series in the small parameter \epsilon for this quantity is computed for the systems of disordered bosons with short-range and Coulomb interactions. The universal, low-temperature, dc critical conductivity for the dirty boson system with Coulomb interaction in d=2 is estimated to be 0.69 (2e)^2 /h, in relatively good agreement with many experiments on thin films. The next order correction is likely to somewhat increase the result, possibly bringing it closer to the self-dual value.Comment: 9 pages, LaTex, no figure

Disordered Boson Systems: A Perturbative Study

A hard-core disordered boson system is mapped onto a quantum spin 1/2 XY-model with transverse random fields. It is then generalized to a system of spins with an arbitrary magnitude S and studied through a 1/S expansion. The first order 1/S expansion corresponds to a spin-wave theory. The effect of weak disorder is studied perturbatively within such a first order 1/S scheme. We compute the reduction of the speed of sound and the life time of the Bloch phonons in the regime of weak disorder. Generalizations of the present study to the strong disordered regime are discussed.Comment: 27 pages, revte

Thermal contraction in silicon nanowires at low temperatures

The thermal expansion effect of silicon nanowires (SiNW) in [100], [110] and [111] directions with different sizes is theoretically investigated. At low temperatures, all SiNW studied exhibit thermal contraction effect due to the lowest energy of the bending vibration mode which has negative effect on the coefficient of thermal expansion (CTE). The CTE in [110] direction is distinctly larger than the other two growth directions because of the anisotropy of the bending mode in SiNW. Our study reveals that CTE decreases with an increase of the structure ratio $\gamma=length/diameter$, and is negative in whole temperature range with $\gamma=1.3$.Comment: accepted by Nanoscal

Vitamin E and selenium plasma concentrations in weanling pigs under field conditions in Norwegian pig herds

BACKGROUND: The status of α-tocopherol (vit E) and selenium (Se) has been shown to influence disease resistance in pigs, and may be important for the health of weanling pigs. METHODS: Plasma levels of both vit E and Se were followed in weanling pigs under field conditions in six Norwegian pig herds. Plasma vit E and Se were measured in 3 sows from each herd and 4 piglets in the litter of each sow at the day before weaning (day -1); and in the same piglets at days 4, 8 and 18 after weaning. RESULTS: Mean plasma vit E was 4.0 μg/ml in the sows and 2.6 μg/ml in the piglets at day -1, fell to 1.6 μg/ml in the weanling pigs at day 4, and remained low. Mean plasma Se was 0.22 μg/g in the sows and 0.08 μg/g in the piglets at day -1, rose to 0.10 μg/g in the weanlings at day 4, and continued rising. CONCLUSION: The results suggest that vit E and Se supplementation to piglets and weanling pigs in Norway may still be suboptimal, but that levels of the two nutrients partially compensate for each other in the weaning period

Renormalization Group Approach to Low Temperature Properties of a Non-Fermi Liquid Metal

We expand upon on an earlier renormalization group analysis of a non-Fermi liquid fixed point that plausibly govers the two dimensional electron liquid in a magnetic field near filling fraction $\nu=1/2$. We give a more complete description of our somewhat unorthodox renormalization group transformation by relating both our field-theoretic approach to a direct mode elimination and our anisotropic scaling to the general problem of incorporating curvature of the Fermi surface. We derive physical consequences of the fixed point by showing how they follow from renormalization group equations for finite-size scaling, where the size may be set by the temperature or by the frequency of interest. In order fully to exploit this approach, it is necessary to take into account composite operators, including in some cases dangerous ``irrelevant'' operators. We devote special attention to gauge invariance, both as a formal requirement and in its positive role providing Ward identities constraining the renormalization of composite operators. We emphasize that new considerations arise in describing properties of the physical electrons (as opposed to the quasiparticles.) We propose an experiment which, if feasible, will allow the most characteristic feature of our results, that isComment: 42 pages, 5 figures upon request, uses Phyzzx, IASSNS-HEP 94/6

Asymmetry of the electron spectrum in hole-doped and electron-doped cuprates

Within the t-t'-J model, the asymmetry of the electron spectrum and quasiparticle dispersion in hole-doped and electron-doped cuprates is discussed. It is shown that the quasiparticle dispersions of both hole-doped and electron-doped cuprates exhibit the flat band around the (\pi,0) point below the Fermi energy. The lowest energy states are located at the (\pi/2,\pi/2) point for the hole doping, while they appear at the (\pi,0) point in the electron-doped case due to the electron-hole asymmetry. Our results also show that the unusual behavior of the electron spectrum and quasiparticle dispersion is intriguingly related to the strong coupling between the electron quasiparticles and collective magnetic excitations.Comment: 8 pages, 3 figures, typo corrected, added detailed calculations and updated figure 3 and references, accepted for publication in Phys. Lett.

Theory and simulation of photogeneration and transport in Si-SiOx superlattice absorbers

Si-SiOx superlattices are among the candidates that have been proposed as high band gap absorber material in all-Si tandem solar cell devices. Owing to the large potential barriers for photoexited charge carriers, transport in these devices is restricted to quantum-confined superlattice states. As a consequence of the finite number of wells and large built-in fields, the electronic spectrum can deviate considerably from the minibands of a regular superlattice. In this article, a quantum-kinetic theory based on the non-equilibrium Green's function formalism for an effective mass Hamiltonian is used for investigating photogeneration and transport in such devices for arbitrary geometry and operating conditions. By including the coupling of electrons to both photons and phonons, the theory is able to provide a microscopic picture of indirect generation, carrier relaxation, and inter-well transport mechanisms beyond the ballistic regime

Ultrathin 2 nm gold as ideal impedance-matched absorber for infrared light

Thermal detectors are a cornerstone of infrared (IR) and terahertz (THz) technology due to their broad spectral range. These detectors call for suitable broad spectral absorbers with minimalthermal mass. Often this is realized by plasmonic absorbers, which ensure a high absorptivity butonly for a narrow spectral band. Alternativly, a common approach is based on impedance-matching the sheet resistance of a thin metallic film to half the free-space impedance. Thereby, it is possible to achieve a wavelength-independent absorptivity of up to 50 %, depending on the dielectric properties of the underlying substrate. However, existing absorber films typicallyrequire a thickness of the order of tens of nanometers, such as titanium nitride (14 nm), whichcan significantly deteriorate the response of a thermal transducers. Here, we present the application of ultrathin gold (2 nm) on top of a 1.2 nm copper oxide seed layer as an effective IR absorber. An almost wavelength-independent and long-time stable absorptivity of 47(3) %, ranging from 2 $\mu$m to 20 $\mu$m, could be obtained and is further discussed. The presented gold thin-film represents analmost ideal impedance-matched IR absorber that allows a significant improvement of state-of-the-art thermal detector technology