Determining the internal quantum efficiency of shallow-implanted nitrogen-vacancy defects in bulk diamond

It is generally accepted that nitrogen-vacancy (NV) defects in bulk diamond are bright sources of luminescence. However, the exact value of their internal quantum efficiency (IQE) has not been measured so far. Here we use an implementation of Drexhage's scheme to quantify the IQE of shallow-implanted NV defects in a single-crystal bulk diamond. Using a spherical metallic mirror with a large radius of curvature compared to the optical spot size, we perform calibrated modifications of the local density of states around NV defects and observe the change of their total decay rate, which is further used for IQE quantification. We also show that at the excitation wavelength of 532 nm, photo-induced relaxation cannot be neglected even at moderate excitation powers well below the saturation level. For NV defects shallow implanted 4.5 ± 1 and 8 ± 2 nm below the diamond surface, we determine the quantum efficiency to be 0.70 ± 0.07 and 0.82 ± 0.08, respectively

Probing surfaces with thermal He atoms: scattering and microscopy with a soft touch

Helium atom scattering (HAS) is a well established technique, particularly suited for the investigation of insulating and/or fragile materials and light adsorbates including hydrogen. In contrast to other beam techniques based on Xrays or electrons, low energy (typically less than 100 meV) He atoms are scattered by the tail of the electron density distribution which spill out from a surface, therefore HAS is strictly a nonpenetrating technique without any sample damage. HAS has been used to investigate structural properties of crystalline surfaces, including precise determination of atomic step heights, for monitoring thin film growth, to study surface transitions such as surface melting and roughening and for determining the presence and properties of adsorbates. Energy resolved HAS can provide information about surface vibrations (phonons) in the meV range and surface diffusion. This chapter provides a brief introduction to HAS with an outlook on a new, promising surface science technique: Neutral Helium Microscopy