Response Function of the Fractional Quantized Hall State on a Sphere II: Exact Diagonalization

We study the excitation spectra and the dynamical structure factor of quantum Hall states in a finite size system through exact diagonalization. Comparison is made between the numerical results so obtained and the analytic results obtained from a modified RPA in the preceding companion paper. We find good agreement between the results at low energies.Comment: 22 pages (REVTeX 3.0). 10 figures available on request. Complete postscript file (including figures) for this paper are available on the World Wide Web at http://cmtw.harvard.edu/~simon/ ; Preprint number HU-CMT-94S0

Robustness of high-fidelity Rydberg gates with single-site addressability

Controlled phase (CPHASE) gates can in principle be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultra-high fidelities required for quantum computation with such Rydberg gates is however compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg CPHASE gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and their spectra contain only one additional frequency beyond the basic resonant Rydberg gate frequencies. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90 - 99.99% to be achievable under realistic experimental conditions.Comment: 12 pages, 14 figure

Dynamic surface scaling behavior of isotropic Heisenberg ferromagnets

The effects of free surfaces on the dynamic critical behavior of isotropic Heisenberg ferromagnets are studied via phenomenological scaling theory, field-theoretic renormalization group tools, and high-precision computer simulations. An appropriate semi-infinite extension of the stochastic model J is constructed, the boundary terms of the associated dynamic field theory are identified, its renormalization in d <= 6 dimensions is clarified, and the boundary conditions it satisfies are given. Scaling laws are derived which relate the critical indices of the dynamic and static infrared singularities of surface quantities to familiar static bulk and surface exponents. Accurate computer-simulation data are presented for the dynamic surface structure factor; these are in conformity with the predicted scaling behavior and could be checked by appropriate scattering experiments.Comment: 9 pages, 2 figure

Dynamic Nuclear Polarization in Double Quantum Dots

We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference in the Overhauser fields across the dots, the saturation of the nuclear polarization process associated with formation of so-called "dark states," and the elimination of the difference field. We show that in the case of unequal dots, build up of difference fields generally accompanies the nuclear polarization process, whereas for nearly identical dots, build up of difference fields competes with polarization saturation in dark states. The elimination of the difference field does not, in general, correspond to a stable steady state of the polarization process.Comment: 4 pages, 2 figure

Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction

We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs thickness and doping density grown on identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures. Electroluminescence (EL) polarization of the surface emission was measured under the Faraday configuration with external magnetic field. All samples have the bias dependence of the EL polarization, and higher EL polarization is obtained in samples in which n+-GaAs is completely depleted at zero bias. The EL polarization is found to be sensitive to the bias condition for both the (Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.Comment: 4pages, 4figures, 1table, To appear in Physica

Theory of Incompressible States in a Narrow Channel

We report on the properties of a system of interacting electrons in a narrow channel in the quantum Hall effect regime. It is shown that an increase in the strength of the Coulomb interaction causes abrupt changes in the width of the charge-density profile of translationally invariant states. We derive a phase diagram which includes many of the stable odd-denominator states as well as a novel fractional quantum Hall state at lowest half-filled Landau level. The collective mode evaluated at the half-filled case is strikingly similar to that for an odd-denominator fractional quantum Hall state.Comment: 4 pages, REVTEX, and 4 .ps file

Oscillatory Tunneling between Quantum Hall Systems

Electron tunneling between quantum Hall systems on the same two dimensional plane separated by a narrow barrier is studied. We show that in the limit where inelastic scattering time is much longer than the tunneling time, which can be achieved in practice, electrons can tunnel back and forth through the barrier continously, leading to an oscillating current in the absence of external drives. The oscillatory behavior is dictated by a tunneling gap in the energy spectrum. We shall discuss ways to generate oscillating currents and the phenomenon of natural ``dephasing" between the tunneling currents of edge states. The noise spectra of these junctions are also studied. They contain singularites reflecting the existence of tunneling gaps as well as the inherent oscillation in the system. (Figures will be given upon requests).Comment: 20 pages, OS

Gauge-invariant critical exponents for the Ginzburg-Landau model

The critical behavior of the Ginzburg-Landau model is described in a manifestly gauge-invariant manner. The gauge-invariant correlation-function exponent is computed to first order in the $4-d$ and $1/n$-expansion, and found to agree with the ordinary exponent obtained in the covariant gauge, with the parameter $\alpha=1-d$ in the gauge-fixing term $(\partial_\mu A_\mu)^2 /2 \alpha$.Comment: 4 pages, no figure