425 research outputs found
Tuning the electronic transport properties of graphene through functionalisation with fluorine
Engineering the electronic properties of graphene has triggered great
interest for potential applications in electronics and opto-electronics. Here
we demonstrate the possibility to tune the electronic transport properties of
graphene monolayers and multilayers by functionalisation with fluorine. We show
that by adjusting the fluorine content different electronic transport regimes
can be accessed. For monolayer samples, with increasing the fluorine content,
we observe a transition from electronic transport through Mott variable range
hopping in two dimensions to Efros - Shklovskii variable range hopping.
Multilayer fluorinated graphene with high concentration of fluorine show
two-dimensional Mott variable range hopping transport, whereas CF0.28
multilayer flakes have a band gap of 0.25eV and exhibit thermally activated
transport. Our experimental findings demonstrate that the ability to control
the degree of functionalisation of graphene is instrumental to engineer
different electronic properties in graphene materials.Comment: 6 pages, 5 figure
Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds
We have performed a comparative study of the electronic properties of six
different electron-doped metal phthalocyanine (MPc) compounds (ZnPc, CuPc,
NiPc, CoPc, FePc, and MnPc), in which the electron density is controlled by
means of potassium intercalation. In spite of the complexity of these systems,
we find that the nature of the underlying molecular orbitals produce observable
effects in the doping dependence of the electrical conductivity of the
materials. For all the MPc's in which the added electrons are expected to
occupy orbitals centered on the ligands (ZnPc, CuPc, and NiPc), the doping
dependence of the conductivity has an essentially identical shape. This shape
is different from that observed in MPc materials in which electrons are also
added to orbitals centered on the metal atom (CoPc, FePc, and MnPc). The
observed relation between the macroscopic electronic properties of the MPc
compounds and the properties of the molecular orbitals of the constituent
molecules, clearly indicates the richness of the alkali-doped
metal-phthalocyanines as a model class of compounds for the investigation of
the electronic properties of molecular systems
Double-gated graphene-based devices
We discuss transport through double gated single and few layer graphene
devices. This kind of device configuration has been used to investigate the
modulation of the energy band structure through the application of an external
perpendicular electric field, a unique property of few layer graphene systems.
Here we discuss technological details that are important for the fabrication of
top gated structures, based on electron-gun evaporation of SiO. We perform
a statistical study that demonstrates how --contrary to expectations-- the
breakdown field of electron-gun evaporated thin SiO films is comparable to
that of thermally grown oxide layers. We find that a high breakdown field can
be achieved in evaporated SiO only if the oxide deposition is directly
followed by the metallization of the top electrodes, without exposure to air of
the SiO layer.Comment: Replaced with revised version. To appear on New Journal of Physic
Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene
Few layer graphene systems such as Bernal stacked bilayer and rhombohedral
(ABC-) stacked trilayer offer the unique possibility to open an electric field
tunable energy gap. To date, this energy gap has been experimentally confirmed
in optical spectroscopy. Here we report the first direct observation of the
electric field tunable energy gap in electronic transport experiments on doubly
gated suspended ABC-trilayer graphene. From a systematic study of the
non-linearities in current \textit{versus} voltage characteristics and the
temperature dependence of the conductivity we demonstrate that thermally
activated transport over the energy-gap dominates the electrical response of
these transistors. The estimated values for energy gap from the temperature
dependence and from the current voltage characteristics follow the
theoretically expected electric field dependence with critical exponent .
These experiments indicate that high quality few-layer graphene are suitable
candidates for exploring novel tunable THz light sources and detectors.Comment: Nano Letters, 2015 just accepted, DOI: 10.1021/acs.nanolett.5b0077
Electronic transport properties of few-layer graphene materials
Since the discovery of graphene -a single layer of carbon atoms arranged in a
honeycomb lattice - it was clear that this truly is a unique material system
with an unprecedented combination of physical properties. Graphene is the
thinnest membrane present in nature -just one atom thick- it is the strongest
material, it is transparent and it is a very good conductor with room
temperature charge mobilities larger than the typical mobilities found in
silicon. The significance played by this new material system is even more
apparent when considering that graphene is the thinnest member of a larger
family: the few-layer graphene materials. Even though several physical
properties are shared between graphene and its few-layers, recent theoretical
and experimental advances demonstrate that each specific thickness of few-layer
graphene is a material with unique physical properties.Comment: 26 pages, 8 figure
Phase transitions and phase diagram of the ferroelectric perovskite NBT-BT by anelastic and dielectric measurements
The complex elastic compliance and dielectric susceptibility of
(Na_{0.5}Bi_{0.5})_{1-x}Ba_{x}TiO_{3} (NBT-BT) have been measured in the
composition range between pure NBT and the morphotropic phase boundary
included, 0 <= x <= 0.08. The compliance of NBT presents sharp peaks at the
rhombohedral/tetragonal and tetragonal/cubic transitions, allowing the
determination of the tetragonal region of the phase diagram, up to now
impossible due to the strong lattice disorder and small distortions and
polarizations involved. In spite of ample evidence of disorder and structural
heterogeneity, the R-T transition remains sharp up to x = 0.06, whereas the T-C
transition merges into the diffuse and relaxor-like transition associated with
broad maxima of the dielectric and elastic susceptibilities. An attempt is made
at relating the different features in the anelastic and dielectric curves to
different modes of octahedral rotations and polar cation shifts. The
possibility is also considered that the cation displacements locally have
monoclinic symmetry, as for PZT near the morphotropic phase boundary.Comment: 11 pages, 9 figures, submitted to Phys. Rev.
Shot Noise in Ballistic Graphene
We have investigated shot noise in graphene field effect devices in the
temperature range of 4.2--30 K at low frequency ( = 600--850 MHz). We find
that for our graphene samples with large width over length ratio , the
Fano factor reaches a maximum 1/3 at the
Dirac point and that it decreases strongly with increasing charge density. For
smaller , the Fano factor at Dirac point is significantly lower. Our
results are in good agreement with the theory describing that transport at the
Dirac point in clean graphene arises from evanescent electronic states.Comment: Phys. Rev. Lett. 100, 196802 (2008
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