8,884 research outputs found
Ultra-dense phosphorus in germanium delta-doped layers
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in
ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat
clean Ge(001) surface followed by thermal incorporation of P into the lattice
and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and
electrical characterizations show that P atoms are confined, with minimal
diffusion, into an ultra-narrow 2-nm-wide layer with an electrically-active
sheet carrier concentration of 4x10^13 cm-2 at 4.2 K. These results open up the
possibility of ultra-narrow source/drain regions with unprecedented carrier
densities for Ge n-channel field effect transistors
Spin-dependent transport in a quasiballistic quantum wire
We describe the transport properties of a 5 m long one-dimensional (1D)
quantum wire. Reduction of conductance plateaux due to the introduction of
weakly disorder scattering are observed. In an in-plane magnetic field, we
observe spin-splitting of the reduced conductance steps. Our experimental
results provide evidence that deviation from conductance quantisation is very
small for electrons with spin parallel and is about 1/3 for electrons with spin
anti-parallel. Moreover, in a high in-plane magnetic field, a spin-polarised 1D
channel shows a plateau-like structure close to which
strengthens with {\em increasing} temperatures. It is suggested that these
results arise from the combination of disorder and the electron-electron
interactions in the 1D electron gas.Comment: 4 pages, 5 figures, latex to be published in Phys. Rev. B (15/3/2000
Benchmarking high fidelity single-shot readout of semiconductor qubits
Determination of qubit initialisation and measurement fidelity is important
for the overall performance of a quantum computer. However, the method by which
it is calculated in semiconductor qubits varies between experiments. In this
paper we present a full theoretical analysis of electronic single-shot readout
and describe critical parameters to achieve high fidelity readout. In
particular, we derive a model for energy selective state readout based on a
charge detector response and examine how to optimise the fidelity by choosing
correct experimental parameters. Although we focus on single electron spin
readout, the theory presented can be applied to other electronic readout
techniques in semiconductors that use a reservoir.Comment: 19 pages, 8 figure
Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
We report experimental evidence of a remarkable spontaneous time reversal
symmetry breaking in two dimensional electron systems formed by atomically
confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si)
and germanium (Ge). Weak localization corrections to the conductivity and the
universal conductance fluctuations were both found to decrease rapidly with
decreasing doping in the Si:P and Ge:P layers, suggesting an effect
driven by Coulomb interactions. In-plane magnetotransport measurements indicate
the presence of intrinsic local spin fluctuations at low doping, providing a
microscopic mechanism for spontaneous lifting of the time reversal symmetry.
Our experiments suggest the emergence of a new many-body quantum state when two
dimensional electrons are confined to narrow half-filled impurity bands
Anomalous spin-dependent behaviour of one-dimensional subbands
We report a new electron interaction effect in GaAs/AlGaAs quantum wires.
Using DC-bias spectroscopy, we show that large and abrupt changes occur to the
energies of spin-down (lower energy) states as they populate. The effect is not
observed for spin-up energy states. At B=0, interactions have a pronounced
effect, in the form of the well-known 0.7 Structure. However, our new results
show that interactions strongly affect the energy spectrum at all magnetic
fields, from 0 to 16T, not just in the vicinity of the 0.7 Structure.Comment: 4 pages, 2 figure
Single-shot single-gate RF spin readout in silicon
For solid-state spin qubits, single-gate RF readout can help minimise the
number of gates required for scale-up to many qubits since the readout sensor
can integrate into the existing gates required to manipulate the qubits
(Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable
quantum computer is that we must be capable of resolving the qubit state within
single-shot, that is, a single measurement (DiVincenzo 2000). Here we
demonstrate single-gate, single-shot readout of a singlet-triplet spin state in
silicon, with an average readout fidelity of at a
measurement bandwidth. We use this technique to measure a triplet to
singlet relaxation time of in precision donor quantum
dots in silicon. We also show that the use of RF readout does not impact the
maximum readout time at zero detuning limited by the to decay,
which remained at approximately . This establishes single-gate
sensing as a viable readout method for spin qubits
Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
The energy spectrum of spin-orbit coupled states of individual sub-surface
boron acceptor dopants in silicon have been investigated using scanning
tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved
tunnel spectra show two resonances which we ascribe to the heavy- and
light-hole Kramers doublets. This type of broken degeneracy has recently been
argued to be advantageous for the lifetime of acceptor-based qubits [Phys. Rev.
B 88 064308 (2013)]. The depth dependent energy splitting between the heavy-
and light-hole Kramers doublets is consistent with tight binding calculations,
and is in excess of 1 meV for all acceptors within the experimentally
accessible depth range (< 2 nm from the surface). These results will aid the
development of tunable acceptor-based qubits in silicon with long coherence
times and the possibility for electrical manipulation
- …