RESULTS FROM BEAM COMMISSIONG OF AN SRF PLUG-GUN CAVITY PHOTOINJECTOR

Abstract Superconducting rf photo-electron injectors (SRF photoinjectors) hold the promise to deliver high brightness, high average current electron beams for future light sources or other applications demanding continuous wave operation of an electron injector. This paper discusses results from beam commissioning of a hybrid SRF photoinjector based on a Pb coated plug and a Nb rf gun cavity for beam energies up to 2.5 MeV at Helmholtz-Zentrum Berlin (HZB). Emittance measurements and transverse phase space characterization with solenoid-scan and slitmask methods will be presented. MOTIVATIO

Effects of Anacetrapib in Patients with Atherosclerotic Vascular Disease

BACKGROUND: Patients with atherosclerotic vascular disease remain at high risk for cardiovascular events despite effective statin-based treatment of low-density lipoprotein (LDL) cholesterol levels. The inhibition of cholesteryl ester transfer protein (CETP) by anacetrapib reduces LDL cholesterol levels and increases high-density lipoprotein (HDL) cholesterol levels. However, trials of other CETP inhibitors have shown neutral or adverse effects on cardiovascular outcomes. METHODS: We conducted a randomized, double-blind, placebo-controlled trial involving 30,449 adults with atherosclerotic vascular disease who were receiving intensive atorvastatin therapy and who had a mean LDL cholesterol level of 61 mg per deciliter (1.58 mmol per liter), a mean non-HDL cholesterol level of 92 mg per deciliter (2.38 mmol per liter), and a mean HDL cholesterol level of 40 mg per deciliter (1.03 mmol per liter). The patients were assigned to receive either 100 mg of anacetrapib once daily (15,225 patients) or matching placebo (15,224 patients). The primary outcome was the first major coronary event, a composite of coronary death, myocardial infarction, or coronary revascularization. RESULTS: During the median follow-up period of 4.1 years, the primary outcome occurred in significantly fewer patients in the anacetrapib group than in the placebo group (1640 of 15,225 patients [10.8%] vs. 1803 of 15,224 patients [11.8%]; rate ratio, 0.91; 95% confidence interval, 0.85 to 0.97; P=0.004). The relative difference in risk was similar across multiple prespecified subgroups. At the trial midpoint, the mean level of HDL cholesterol was higher by 43 mg per deciliter (1.12 mmol per liter) in the anacetrapib group than in the placebo group (a relative difference of 104%), and the mean level of non-HDL cholesterol was lower by 17 mg per deciliter (0.44 mmol per liter), a relative difference of -18%. There were no significant between-group differences in the risk of death, cancer, or other serious adverse events. CONCLUSIONS: Among patients with atherosclerotic vascular disease who were receiving intensive statin therapy, the use of anacetrapib resulted in a lower incidence of major coronary events than the use of placebo. (Funded by Merck and others; Current Controlled Trials number, ISRCTN48678192 ; ClinicalTrials.gov number, NCT01252953 ; and EudraCT number, 2010-023467-18 .)

Quantitative Forschungsmethoden in der Mathematikdidaktik

In diesem Kapitel werden zentrale Aspekte der quantitativen empirischen Forschung vorgestellt. Dabei werden sowohl Grundlagen der Psychometrie als auch die wesentlichen Schritte eines quantitativ-empirischen Forschungsprozesses erläutert (Entwurf eines Designs zur Untersuchung von Fragestellungen, Konstruktion der Untersuchungsinstrumente, Wahl der Stichprobe sowie die wichtigsten statistischen Analyseverfahren). Dabei wird einerseits versucht, insbesondere solche Aspekte zu behandeln, die vor allem Einsteiger häufig vor Probleme stellen (z.B. welche Fragestellungen überhaupt quantitative Methoden erfordern). Andererseits soll aber auch anhand von Beispielen ein Überblick über den gesamten empirischen Forschungsprozess gegeben werden – von der Formulierung von Fragestellungen und Hypothesen bis hin zur Diskussion der Ergebnisse. Die in diesem Kapitel vorgestellten Konzepte und Methoden sollen vor allem NachwuchswissenschaftlerInnen wichtige Anhaltspunkte zur Planung, Durchführung und Auswertung einer empirischen Studie geben, darüber hinaus aber auch die Rezeption von Berichten aus der empirischen Forschung erleichtern

Modelling Inhibition Effects of Short-Chain Hydrocarbons on a Small-Pore Cu-Zeolite NH3-SCR Catalyst

NH3-SCR currently represents the leading technology for NOx abatement from lean exhaust gases, e.g. from diesel engines. Hydrocarbon (HC) slip onto the SCR catalyst can have a negative impact on its DeNOx performance. In order to better understand hydrocarbon poisoning, the influence of different light HCs on the catalytic activity of a small-pore Cu-zeolite has been investigated in a synthetic gas test rig. Based on these data and on further indications from the literature, an existing SCR kinetic model has been extended to represent major effects of light HCs on the behavior of zeolite SCR catalysts. The developed model is able to describe such effects in a simple but effective way

In situ determination of laser induced degradation of micro-mirror arrays

The Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS) develops spatial light modulators (SLMs) based on arrays of tiltable micro mirrors on a semiconductor chip. Typical applications are pattern generation for deep UV-laser mask writing or structured illumination in microscopy. Development and optimization of such SLMs requires detailed knowledge of the device behaviour under operating conditions. Here, the flatness of each single mirror effects the image resolution and contrast of the generated pattern and is amongst others a characteristic property of SLMs. In this context a surface topography measurement under laser exposure (in situ) was designed. The interferometric setup uses the phase-shift principle and allows a resolution in z-direction in the single-digit nanometer range. During irradiation with UV-laser light at 248 nm (KrF) and energy densities of up to 20 mJ/cm 2 the change in single micro-mirrors topography was detected in situ. Measurements with varying pulse energies were carried out to identify an impact on the device performance. In general, the setup is neither limited to a specific illumination wavelength nor to micro-mirrors as structures under test

Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements

A physical vapor deposition tool for 300 mm wafers was coupled with an angle resolved photoelectron spectroscopy tool (ARXPS) and used to study the growth of TaN single layer and TaN/Ta double layer diffusion barriers. The nitrogen content of TaN was adjusted by controlling the nitrogen flow and by varying the deposition power. We describe a process recipe that allows us to decrease the TaN thickness while still maintaining the Ta layer in the low resistivity -phase. The process recipe was developed on blanket wafers and evaluated in a test structure for high performance CMOS products

Interface engineering for the TaN/Ta barrier film deposition process to control Ta-crystal growth

As a consequence of device shrinking the resistivity of the widely used TaN/Ta double barrier layer becomes an increasingly important parameter for device speed beyond the 32 nm technology node. In this study we describe the optimization of the deposition of TaN/Ta stacks in such a way that tantalum nitride layer thickness is minimized and tantalum grows in the favorable conducting -phase. In the first part of the study we used in situ ARXPS to investigate the growth of different tantalum nitride layers on SiO2 and SiOCH as a function of deposition time, nitrogen flow and deposition power. In the second part we analyzed the crystalline phase of a 20 nm thick tantalum layer deposited on top of the same series of tantalum nitride layers characterized in the growth study. The main findings are the appearance of tantalum carbide and tantalum silicide as interface species for the deposition on SiOCH and only tantalum silicide for the deposition on SiO2. We found that -tantal um grows preferably on tantalum carbide and nitrogen rich intermediate layers whereas silicide at the interface promotes the growth of -tantalum. To verify these findings we studied two additional modifications of the interface. A lower bias power for a deposition of tantalum nitride on SiO2 was used to confirm the role of tantalum silicide and a thermal treatment of a thin tantalum layer on SiOCH was applied to confirm the role of tantalum carbide. Finally, the contact resistance in via chains on patterned wafers for four selected processes showed the same trends as the sheet resistance of the corresponding barrier films on blanket wafer experiments