Design and Performance of the CMS Pixel Detector Readout Chip

The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a minimum. It is dominated by contributions coming from the readout. To keep it low an analog readout scheme has been adopted where pixel addresses are analog coded. We present the architecture of the final CMS pixel detector readout chip with special emphasis on the analog readout chain. Measurements of its performance are discussed.Comment: 8 pages, 11 figures. Contribution to the Proceedings of the Pixel2005 Workshop, Bonn, German

The CMS Pixel FED

The innermost detector of the CMS Experiment consists of 66 million silicon pixels. The hit data has to be read out and must be digitized, synchronized, formatted and transferred over the S-Link to the CMS DAQ. The amount of data can only be handled because the readout chip (ROC) delivers zero-suppressed data above an adjustable threshold for every pixel. The Pixel FED 9U VME module receives an analog optical signal, which is subsequently digitized and processed. The position of the pixel on a module is transmitted with five symbols coded in six pulse height steps each. The data of 36 inputs build a final event data block. The data block from each detector module with either 16 or 24 ROCs differs in length and arrival time. Depending on the data length and trigger rate, there can be a skew of several events between any two inputs. That is possible because the ROC has a multievent time stamp memory and the readout bandwith is limited. Finally the information processed by the Pixel FED will be transferred over the S-Link to the CMS DAQ. Each module must be able to process a trigger rate of 100 kHz or, if in trouble, to send an alarm signal. The number of inputs is limited by the maximum data transmission rate of the S-Link (640 MB/s) for the expected high luminosity of LHC. The data flow on the module is continuously controlled. Errors are written in an error memory, included in the data stream and if critical sent to the general CMS readout control

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure

Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.Comment: 6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18, 2004, Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth.

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.Comment: 8 pages, LaTeX document, 10 figures. Presented at Pixel 2005 Workshop, Bonn, Sept 2005. Small cosmetic revisions in response to referee comments and to fix broken reference link

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.Comment: Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation Experiments, Stanford Ca (SNIC06) 8 pages, LaTeX, 11 eps figure

Approximate particle number projection for finite range density dependent forces

The Lipkin-Nogami method is generalized to deal with finite range density dependent forces. New expressions are derived and realistic calculations with the Gogny force are performed for the nuclei $^{164}$Er and $^{168}$Er. The sharp phase transition predicted by the mean field approximation is washed out by the Lipkin-Nogami approach; a much better agreement with the experimental data is reached with the new approach than with the Hartree-Fock_Bogoliubov one, specially at high spins.Comment: 5 pages, RevTeX 3.0, 3 postscript figures included using uufiles. Submitted to Phys. Rev. Let

BRAHMA ATPase of the SWI/SNF Chromatin Remodeling Complex Acts as a Positive Regulator of Gibberellin-Mediated Responses in Arabidopsis

SWI/SNF chromatin remodeling complexes perform a pivotal function in the regulation of eukaryotic gene expression. Arabidopsis (Arabidopsis thaliana) mutants in major SWI/SNF subunits display embryo-lethal or dwarf phenotypes, indicating their critical role in molecular pathways controlling development and growth. As gibberellins (GA) are major positive regulators of plant growth, we wanted to establish whether there is a link between SWI/SNF and GA signaling in Arabidopsis. This study revealed that in brm-1 plants, depleted in SWI/SNF BRAHMA (BRM) ATPase, a number of GA-related phenotypic traits are GA-sensitive and that the loss of BRM results in markedly decreased level of endogenous bioactive GA. Transcriptional profiling of brm-1 and the GA biosynthesis mutant ga1-3, as well as the ga1-3/brm-1 double mutant demonstrated that BRM affects the expression of a large set of GA-responsive genes including genes responsible for GA biosynthesis and signaling. Furthermore, we found that BRM acts as an activator and directly associates with promoters of GA3ox1, a GA biosynthetic gene, and SCL3, implicated in positive regulation of the GA pathway. Many GA-responsive gene expression alterations in the brm-1 mutant are likely due to depleted levels of active GAs. However, the analysis of genetic interactions between BRM and the DELLA GA pathway repressors, revealed that BRM also acts on GA-responsive genes independently of its effect on GA level. Given the central position occupied by SWI/SNF complexes within regulatory networks controlling fundamental biological processes, the identification of diverse functional intersections of BRM with GA-dependent processes in this study suggests a role for SWI/SNF in facilitating crosstalk between GA-mediated regulation and other cellular pathways

Search for the standard model Higgs boson in the H to ZZ to 2l 2nu channel in pp collisions at sqrt(s) = 7 TeV

A search for the standard model Higgs boson in the H to ZZ to 2l 2nu decay channel, where l = e or mu, in pp collisions at a center-of-mass energy of 7 TeV is presented. The data were collected at the LHC, with the CMS detector, and correspond to an integrated luminosity of 4.6 inverse femtobarns. No significant excess is observed above the background expectation, and upper limits are set on the Higgs boson production cross section. The presence of the standard model Higgs boson with a mass in the 270-440 GeV range is excluded at 95% confidence level.Comment: Submitted to JHE