Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10(17) m(-2). We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching. (C) 2015 Author(s).Dutch Polymer Institute (DPI), BISTABLE [704]; Fundacao para Ciencia e Tecnologia (FCT) through the research Instituto de Telecommunicacoes (IT-Lx); project Memristor based Adaptive Neuronal Networks (MemBrAiNN) [PTDC/CTM-NAN/122868/2010]; European Community Seventh Framework Programme FP7', ONE-P [212311]; Dutch Ministry of Education, Culture and Science (Gravity Program) [024.001.035]info:eu-repo/semantics/publishedVersio

Influence of Patagonian glaciers on Antarctic dust deposition during the last glacial period

Dust in the atmosphere plays a role in the transparency of the atmosphere1, the mineral nourishment of the oceans and can be used to constrain global circulation models today and in the past. Antarctic ice cores provide an 800,000 year record of changes in dust flux thought to reflect changes in the vigour of global atmospheric circulation and environmental conditions in source areas. Here for the first time we link the source of Last Glacial dust peaks in Antarctica to the gravel outwash plains of Patagonian glaciers in the Magellan area of southernmost South America. We find that there is an on-off switch in that the peaks coincide with episodes when glaciers discharge sediment directly onto outwash plains but not when they terminate in lakes. This finding helps solve several long-standing puzzles, namely: why both dust and fresh water diatom concentrations during glacial maxima are so much higher (x ~20) than at the present day; why dust peaks occur only below a certain temperature threshold; and why the decline in dust concentrations at the end of glacial cycles precedes the main phase of warming, the rise in sea level, and the reduction in southern hemisphere sea ice extent

Reconstruction of east–west deep water exchange in the low latitude Atlantic Ocean over the past 25,000 years

Radiogenic neodymium isotopes have been used as a water mass mixing proxy to investigate past changes in ocean circulation. Here we present a new depth transect of deglacial neodymium isotope records measured on uncleaned planktic foraminifera from five cores spanning from 3300 to 4900 m on the Mauritanian margin, in the tropical eastern Atlantic as well as an additional record from 4000 m on the Ceara Rise in the equatorial western Atlantic. Despite being located under the Saharan dust plume, the eastern Atlantic records differ from the composition of detrital inputs through time and exhibit similar values to the western Atlantic foraminiferal Nd across the deglaciation. Therefore we interpret the foraminiferal values as recording deep water Nd isotope changes. All six cores shift to less radiogenic values across the deglaciation, indicating that they were bathed by a lower proportion of North Atlantic Deep Water during the Last Glacial Maximum (LGM) relative to the Holocene. The eastern Atlantic records also show that a neodymium isotope gradient was present during the LGM and during the deglaciation, with more radiogenic values observed at the deepest sites. A homogeneous water mass observed below 3750 m in the deepest eastern Atlantic during the LGM is attributed to the mixing of deep water by rough topography as it passes from the western Atlantic through the fracture zones in the Mid-Atlantic Ridge. This implies that during the LGM the low latitude deep eastern Atlantic was ventilated from the western Atlantic via advection through fracture zones in the same manner as occurs in the modern ocean. Comparison with carbon isotopes indicates there was more respired carbon in the deep eastern than deep western Atlantic during the LGM, as is also seen in the modern Atlantic Ocean

Electrical conduction of LiF interlayers in organic diodes

An interlayer of LiF in between a metal and an organic semiconductor is commonly used to improve the electron injection. Here, we investigate the effect of moderate bias voltages on the electrical properties of Al/LiF/poly(spirofluorene)/Ba/Al diodes by systematically varying the thickness of the LiF layer (2-50 nm). Application of forward bias V below the bandgap of LiF (V < E-g similar to 14 V) results in reversible formation of an electrical double layer at the LiF/poly(spirofluorene) hetero-junction. Electrons are trapped on the poly(spirofluorene) side of the junction, while positively charged defects accumulate in the LiF with number densities as high as 10(25)/m(3). Optoelectronic measurements confirm the built-up of aggregated, ionized F centres in the LiF as the positive trapped charges. The charged defects result in efficient transport of electrons from the polymer across the LiF, with current densities that are practically independent of the thickness of the LiF layer. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.Fundacao para Ciencia e Tecnologia (FCT) through the research Instituto de Telecommunicacoes (IT-Lx); project Memristor based Adaptive Neuronal Networks (MemBrAiNN) [PTDC/CTM-NAN/122868/2010]; KAU [71-100-35-HiCi]; European Community [212311]; ONE-P; Dutch Ministry of Education, Culture and Science [024.001.035]info:eu-repo/semantics/publishedVersio

Analytical and numerical solutions of the potential and electric field generated by different electrode arrays in a tumor tissue under electrotherapy

<p>Abstract</p> <p>Background</p> <p>Electrotherapy is a relatively well established and efficient method of tumor treatment. In this paper we focus on analytical and numerical calculations of the potential and electric field distributions inside a tumor tissue in a two-dimensional model (2D-model) generated by means of electrode arrays with shapes of different conic sections (ellipse, parabola and hyperbola).</p> <p>Methods</p> <p>Analytical calculations of the potential and electric field distributions based on 2D-models for different electrode arrays are performed by solving the Laplace equation, meanwhile the numerical solution is solved by means of finite element method in two dimensions.</p> <p>Results</p> <p>Both analytical and numerical solutions reveal significant differences between the electric field distributions generated by electrode arrays with shapes of circle and different conic sections (elliptic, parabolic and hyperbolic). Electrode arrays with circular, elliptical and hyperbolic shapes have the advantage of concentrating the electric field lines in the tumor.</p> <p>Conclusion</p> <p>The mathematical approach presented in this study provides a useful tool for the design of electrode arrays with different shapes of conic sections by means of the use of the unifying principle. At the same time, we verify the good correspondence between the analytical and numerical solutions for the potential and electric field distributions generated by the electrode array with different conic sections.</p

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 1017m-2. We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching.</p

Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For bias voltages below 6 V, the number of trapped electrons is found to be CoxideV/q with Coxide as the geometrical capacitance of the oxide layer. This implies a density of traps for the electrons at the polymer-metal oxide interface larger than 31017 m−2

WRINKLED1 and ACYL‐COA:DIACYLGLYCEROL ACYLTRANSFERASE1 regulate tocochromanol metabolism in Arabidopsis

Photosynthetic organisms such as plants, algae and some cyanobacteria synthesize tocochromanols, a group of compounds that encompasses tocopherols and tocotrienols and that exhibits vitamin E activity in animals. While most vitamin E biosynthetic genes have been identified in plant genomes, regulatory genes controlling tocopherol accumulation are currently unknown.We isolated by forward genetics Arabidopsis enhanced vitamin E (eve) mutants that overaccumulate the classic tocopherols and plastochromanol-8, and a tocochromanol unknown in this species. We mapped eve1 and eve4, and identified the unknown Arabidopsis tocochromanol by using a combination of analytical tools. In addition, we determined its biosynthetic pathway with a series of tocochromanol biosynthetic mutants and transgenic lines.eve1 and eve4 are two seed lipid mutants affecting the WRINKLED1 (WRI1) and ACYL-COA:DIACYLGLYCEROL ACYLTRANSFERASE1 (DGAT1) genes, respectively. The unknown tocochromanol is 11′-12′ γ-tocomonoenol, whose biosynthesis is VITAMIN E 1 (VTE1) - and VTE2-dependent and is initiated by the condensation of homogentisate (HGA) and tetrahydrogeranylgeranyl pyrophosphate.This study identifies the first two regulatory genes, WRI1 and DGAT1, that control the synthesis of all tocochromanol forms in seeds, and shows the existence of a metabolic trade-off between lipid and tocochromanol metabolisms. Moreover, it shows that Arabidopsis possesses a tocomonoenol biosynthetic pathway that competes with tocopherol synthesis

Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements.</p

Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License