Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrically passivated by an ultraviolet irradiation treatment. For the Au/3C-SiC Schottky interface, a contact area dependence of the Schottky barrier height (ΦB) was found even after this passivation, indicating that there are still some electrically active defects at the interface. Improved electrical properties were observed in the case of the Pt/3C-SiC system. In this case, annealing at 500°C resulted in a reduction of the leakage current and an increase of the Schottky barrier height (from 0.77 to 1.12 eV). A structural analysis of the reaction zone carried out by transmission electron microscopy [TEM] and X-ray diffraction showed that the improved electrical properties can be attributed to a consumption of the surface layer of SiC due to silicide (Pt2Si) formation. The degradation of Schottky characteristics at higher temperatures (up to 900°C) could be ascribed to the out-diffusion and aggregation of carbon into clusters, observed by TEM analysis

Social behaviour, socio-cognitive skills and attachment style in school-aged children: what is the relation with academic outcomes?

The present research explored the relation between socio-cognitive skills, as Theory of Mind and affective empathy, social behaviour, attachment style and scholastic success in children, aged from 8 to 11 years (N = 159; 90 females, 69 males; Mage = 9,60; DS = .78). Several assessment tools were administered to children on mentalizing abilities (Stories), empathy (FASTE), language (PPVT-R), attachment style (SAT) and learning (M.T. and AC-MT 6-11), while the teachers were asked to complete a questionnaire about every child’s social behaviour (SDQ). The correlational analysis and MANOVA prove that ‘secure’ children show more prosocial behaviour, moral mentalizing and empathic capacities in the classroom, receiving better evaluations from teachers and in learning tests. Moreover, socio-cognitive skills and prosocial behaviour are associated with academic performance, while the affective empathy is only related to teachers’ evaluations. Finally, the implications of these findings for theoretical and research development on socio-cognitive skills are discussed

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Abstract In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrically passivated by an ultraviolet irradiation treatment. For the Au/3C-SiC Schottky interface, a contact area dependence of the Schottky barrier height (&#934;B) was found even after this passivation, indicating that there are still some electrically active defects at the interface. Improved electrical properties were observed in the case of the Pt/3C-SiC system. In this case, annealing at 500&#176;C resulted in a reduction of the leakage current and an increase of the Schottky barrier height (from 0.77 to 1.12 eV). A structural analysis of the reaction zone carried out by transmission electron microscopy [TEM] and X-ray diffraction showed that the improved electrical properties can be attributed to a consumption of the surface layer of SiC due to silicide (Pt2Si) formation. The degradation of Schottky characteristics at higher temperatures (up to 900&#176;C) could be ascribed to the out-diffusion and aggregation of carbon into clusters, observed by TEM analysis.</p